SGS Thomson Microelectronics PZT3904 Datasheet
®
SMALL SIGNAL NPN TRANSI STOR
Type Marking
PZT3904 3904
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTOR
■ SOT-223 PLASTIC PAC KAG E FOR
SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE PNP COMPLEMENTARY TYPE IS
PZT3906
PZT3904
PRELIMINARY DATA
2
3
2
1
APPLICATIONS
■ WELL SUITABLE FOR SMD MOTHER
SOT-223
BOARD ASS EM B LY
■ SMALL LOAD SWITCH T RANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) 60 V
CBO
Collector-Emitter Voltage (IB = 0) 40 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
I
Collector Current 200 mA
C
Total Dissipation at TC = 25 oC1W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
June 2002
1/4
PZT3904
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 125
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
V
(BR)CEO
Collector Cut-off
Current (V
= -3 V)
BE
Base Cut-off Current
(V
= -3 V)
BE
∗ Collector-Emitter
= 30 V 50 nA
V
CE
= 30 V 50 nA
V
CE
= 1 mA 40 V
I
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= 10 µA
I
C
60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= 10 µA
I
E
6V
Breakdown Voltage
(I
= 0)
C
V
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
IC = 10 mA IB = 1 mA
I
= 50 mA IB = 5 mA
C
IC = 10 mA IB = 1 mA
I
= 50 mA IB = 5 mA 0.65
C
hFE∗ DC Current Gain IC = 0.1 mA VCE = 1 V
I
= 1 mA VCE = 1 V
C
I
= 10 mA VCE = 1 V
C
I
= 50 mA VCE = 1 V
C
I
= 100 mA VCE = 1 V
C
f
C
CBO
Transition Frequency IC = 10 mA VCE = 20 V f = 100 MHz 250 270 MHz
T
Collector-Base
IE = 0 VCB = 10 V f = 1 MHz 4 pF
60
80
100
60
30
0.2
0.2
0.85
0.95
300
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = 0.5 V f = 1 MHz 18 pF
Capacitance
NF Noise Figure V
= 5 V IC = 0.1 mA f = 10 Hz
CE
5dB
to 15.7 KHz RG = 1 KΩ
t
t
Delay Time
d
Rise Time
t
r
Storage Time
s
Fall Time
t
f
IC = 10 mA IB = 1 mA
V
= 30 V
CC
IC = 10 mA IB1 = -I
V
= 30 V
CC
B2
= 1 mA
35
35
200
50
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
V
V
V
V
ns
ns
ns
ns
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