SGS Thomson Microelectronics PD55003 Datasheet

PD55003

PD55003S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 3 W with 17 dB gain @ 500 MHz / 12.5 V

OUT

• NEW RF PLASTIC PACKAGE DESCRIPTION

The PD55003 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD 55003 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF . PD55003’s superior linearity performance makes it an ideal solution for car mobile radio.

The LdmoST

PowerSO-10RF

(formed lead)

ORDER CODE

PD55003

Plastic FAMILY

BRANDING

PD55003

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been spe cially optimized for RF needs and offers excellent RF performances and ease of assembly.

ORDER CODE

PD55003S

PowerSO-10R F

(Straight lead)

BRANDING

PD55003S

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

(BR)DSS

V

GS

I

D

P

DISS

Tj Max. Operating Junction Temperature 165 °C

T

STG

Drain-Source Voltage 40 V Gate-Source Voltage ± 20 V Drain Current 2.5 A Power Dissipation (@ Tc = 70°C) 31.7 W

Storage Temperature -65 to +150 °C

CASE

= 25°C)

THERMA L D ATA

R

th(j-c)

Junction -Case Thermal Resistance 3.0 °C/W

1/19March, 21 2003

PD55003 - PD55003S

ELECTRICAL SPECIFICATION (T

CASE

= 25°C)

STATIC

Symbol Test Conditions Min. Typ. Max. Unit

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

g

C C C

FS

ISS OSS RSS

VGS = 0 V VDS = 28 V VGS = 20 V VDS = 0 V VDS = 10 V

= 50 mA

ID

VGS = 10 V ID = 0.5 A VDS = 10 V ID = 1 A VGS = 0 V VDS = 12.5 V f = 1 MHz VGS = 0 V VDS = 12.5 V f = 1 MHz VGS = 0 V VDS = 12.5 V f = 1 MHz

1 µA 1 µA

2.0 5.0 V

0.36 V

1.0 mho 36 pF 24 pF

2.4 pF

DYNAMIC

Symbol Test Conditions Min. Typ. Max. Unit

P

1dB

G

P

η

D

Load

mismatch

VDD = 12.5 V IDQ = 50 mA f = 500 MHz V

= 12.5 V IDQ = 50 mA P

DD

VDD = 12.5 V IDQ = 50 mA P

= 15.5 V IDQ = 50 mA P

V

DD

= 3 W f = 500 MHz

OUT

= 3 W f = 500 MHz

OUT

= 3 W f = 500 MHz

OUT

ALL PHASE ANGLES

3W 14 17 dB 45 52 %

20:1 VSWR

PIN CONNECTION

SOURCE

GATE

SC15200

PD55003

Z

FREQ. MHz

(Ω)Z

IN

520 1.871 - j 1.118 4.779 + j 4.956 500 1.542 - j 3.705 6.842 + j 6.209 480 1.109 - j 1.783 6.789 + j 4.533

DRAIN

DL

IMPEDANCE DATA

(Ω)

D

Typical Input Impeda nce

Typical Drain Load Imped ance

G

Zin

S

SC13140

PD55003S

Z

FREQ. MHz

(Ω)Z

IN

520 1.407 - j 3.550 6.557 + j 7.844 500 1.306 - j 5.159 8.351 + j 9.120 480 1.302 - j 6.141-j 8.994 + j 8.983

Z

DL

(Ω)

DL

860 1.33 + j 1.23 2.93 + j 0.62

2/19

TYPICAL PERFORMANCE Capacitance vs. Drain Voltage

PD55003 - PD55003S

Drain Current vs. Gate Voltage

100

f= 1 MHz

Ciss

Coss

10

C, CAPACITANCES (pF)

1

0 5 10 15 20 25 30

Crss

VDD, DRAIN VOLTAGE (V )

Gate-Source Voltage vs. Case Temperature

1.06

1.04

1.02

1

0.98

0.96

Vds= 10 V

VGS, GATE-SOURCE VOLTAGE (Normaliz ed)

0.94

-25 0 25 50 75 100

Id= 2.5 A

Id= 2 A

Id= 1.5 A

Id= .25 A

Tc, CASE TEMPERATURE (°C)

Id= 1 A

Id= .5 A

2.5

2

1.5

1

0.5

Id, DRAIN CURRENT (A)

0

22.533.544.555.56

VGS, GATE-SOURCE VOLTAGE (V)

Vdd=10V

3/19

PD55003 - PD55003S

TYPICAL PERFORMANCE Output Power vs. Input Power

PD55003

Output Power vs. Input Power

7

6

5

4

3

2

Pout, OUT P UT POWER (W)

1

0

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35

480 MHz

500 MHz

Pin, INPUT POWER (W)

520 MHz

Vdd = 12.5 V Idq = 50 mA Tune for Po=3 W

Drain Efficiency vs. Output Power

70

60

50

40

500 MHz

480 MHz

520 MHz

7

6

5

4

3

2

Pout, OUTPUT POWER (W)

1

0

0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1

500 MHz

480 MHz

520 MHz

Pin, INPUT POWER (W)

Vdd = 12.5 V Idq = 50 mA Tune for Po =6 W

Drain Efficiency vs. Output Power

70

60

50

40

480 MHz

500 MHz

520 MHz

30

Nd, DRAIN EFFICIENCY (%)

20

01234567

Vdd = 12.5 V Idq = 50 mA Tune for P o =3 W

Pout, OUTPUT POWER (W)

Power Gain vs. Output Power

20

18

16

520 MHz

14

12

10

Gp, POWER GAIN (dB)

8

6

4

01234567

480 MHz

Pout, OUTPUT POWER (W)

500 MHz

Vdd = 12.5 V Idq = 50 mA Tune f or Po= 3 W

30

Nd, DRAIN EFFICIENCY (%)

20

01234567

Vdd = 12.5 V Idq = 50 mA Tune for Po=6 W

Pout, OUTPUT POWER (W)

Return Loss vs. Output Power

0

-10

-20

-30

Rl, INPUT RETURN LOSS (dB)

-40 01234567

480 MHz

520 MHz

500 MHz

Pout, OUTPUT POWER (W)

Vdd = 12.5 V Idq = 50 mA Tune for Po=3 W

4/19

TYPICAL PERFORMANCE Output Power vs. Bias Current

PD55003 - PD55003S

Drain Efficiency vs. Bias Current

4

3.8

3.6

500 MHz

480 MHz

3.4

3.2

3

Pout, OUTPUT POWER (W)

2.8

2.6 0 100 200 300 400 500 600

IDQ, BIAS CURRENT (mA)

Output Power vs. Supply Voltage

3.5

3

500 MHz

2.5

480 MHz

520 MHz

Vdd = 12.5 V Pin=17.9 dBm Tune for Po=3 W

60

50

40

30

20

Nd, DRAIN EFFICIENC Y(%)

10

0

0 100 200 300 400 500 600

520 MHz

IDQ, BIAS CURRENT (mA)

500 MHz

480 MHz

Drain Efficiency vs. Supply Voltage

60

50

40

30

480 MHz

500 MHz

520 MHz

Vdd = 12.5 V Pin=17.9 dB m Tune for Po=3 W

2

Pout, OUTPUT POWER (W)

1.5 8 9 10 11 12 13 14 15

VDD, SUPPLY VOLTAGE (V)

Idq = 50 mA Pin=17.9 dBm Tune f or Po =3 W

Output Power vs. Gate Voltage

5

4

3

2

500 MHz

Pout, OUTPUT POWER (W)

1

0

012345

VGS, GATE-SOURCE VOLTAGE (V)

480 MHz

520 MHz

Vdd = 12.5 V Pin=17.9 dBm Tune for Po=3 W

20

Nd, DRAIN EFFICIENCY (%)

10

0

8 9 10 11 12 13 14 15

VDD, SUPPLY VOLTAGE (V)

Idq = 50 mA Pin=17.9 dBm Tune for Po = 3 W

5/19

PD55003 - PD55003S

TYPICAL PERFORMANCE Output Power vs. Input Power

PD55003S

Output Power vs. Input Power

7 6 5

480 MHz

500 MHz

520 MHz

4 3 2 1

Pout, OUTPUT POWER (W)

0

Vdd = 12.5 V Idq = 50 mA Tune fo r Po=3 W

0 0.05 0.1 0.15 0.2 0.25 0.3

Pin, INPUT POWER (W)

Drain Efficiency vs. Output Power

80

70

60

50

40

Nd, DRAIN EFFICIENCY (%)

30

20

01234567

500 MHz

Pout, OUTPUT POWER (W)

520 MHz

480 MHz

Vdd = 12.5 V Idq = 50 mA Tune for Po=3 W

7

6

500 MHz

5

4

480 MHz

520 MHz

3

2

Pout, OUTPUT POWER (W)

1

0

0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1

Vdd = 12.5 V Idq = 50 mA Tune for Po=6 W

Pin, INPUT POWER (W)

Drain Efficiency vs. Output Power

80

70

60

50

40

Nd, DRAIN EFF I CI E NCY ( %)

30

20

01234567

480 MHz

500 MHz

Pout, OUTPUT POWER (W)

520 MHz

Vdd = 12.5 V Idq = 50 mA Tune f or Po =6 W

Power Gain vs. Output Power

20 18 16 14 12 10

8

Gp, POWER GAIN (dB)

6 4

01234567

6/19

500 MHz

520 MHz

Pout, OUTPUT POWER (W)

480 MHz

Vdd = 12.5 V Idq = 50 mA Tune for Po= 3 W

Return Loss vs. Output Power

0

-10

-20

-30

Rl, INPUT RETURN LOSS (dB)

-40 01234567

500 MHz

Pout, OUTPUT POWER (W)

480 MHz

520 MHz

Vdd = 12.5 V Idq = 50 mA Tun e fo r Po=3 W