SGS Thomson Microelectronics PD54008 Datasheet

PD54008 - PD54008S

RF POWER TRANSISTORS

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD54008 is acommon source N-Channel, en­hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech­nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54008’s su­perior linearity performance makes it an ideal so­lution for portable radio.

The PowerSO-10 plastic package, designed to of­fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.

The

LdmoST

Plastic FAMILY

PowerSO-10RF

(Formed Lead)

ORDER CODE BRANDING

PD54008

PowerSO-10RF

(Straight Lead)

ORDER CODE BRANDING

PD54008S XPD54008S

PRELIMINARY DATA

XPD54008

ABSOLUTE MAXIMUM RATINGS(T

Symbol Parameter Value Unit

V

(BR)DSS

V

I

P

DISS

T

T

STG

GS

D

Drain Source Voltage 25 V
Gate-Source Voltage ±20 V
Drain Current 5 A

Power Dissipation (@ Tc= 700C)
Max. Operating Junction Temperature 165 0

j

Storage Temperature -65 to 165 0

CASE

=25OC)

73 W

THERMAL DATA

R

th(j-c)

May 2000

Junction-Case Thermal Resistance 1.3

0

C/W

C
C

1/10

PD54008 - PD54008S

ELECTRICAL SPECIFICATION(T

CASE

=250C)

STATIC

Symbol Parameter Min. Typ. Max. Unit

I

DSS

I

GSS

V

GS(Q)

V

DS(ON)

g

C

C

OSS

C

FS

ISS

RSS

VGS=0V VDS=25V
VGS=20V VDS=0V
VDS=10V ID= 150 mA
VGS=10V ID=2A

2.0 5.0 V

1 µA
1 µA

0.7 V
VDS=10V ID= 2 A 2.0 2.5 mho
VGS=0V VDS= 7.5 V f = 1 MHz

91 pF
VGS=0V VDS= 7.5 V f = 1 MHz 68 pF
VGS=0V VDS= 7.5 V f = 1 MHz

8.5 pF

DYNAMIC

Symbol Parameter Min. Typ. Max. Unit

P

OUT

G

PS

η

D

LOAD

Mismatch

f = 500 MHz VDD=7.5V IDQ= 150 mA
f = 500 MHz VDD=7.5V P
f = 500 MHz VDD=7.5V P
f = 500 MHz V

= 9.5 V P

DD

=8W IDQ= 150 mA

OUT

=8W IDQ= 150 mA

OUT

=8W IDQ= 150 mA

OUT

ALL PHASE ANGLES

8W

10 dB

50

20:1 VSWR

%

SC15200

PD54008

Frequency

MHz

480 2.00 - j1.44 1.41 - j.38
500 1.92 - j1.21 1.58 - j.70
520 2.18 - j.88 1.61 - j1.05

2/10

PIN CONNECTION

Zin

Ω

SOURCE

DRAINGATE

IMPEDANCE DATA

PD54008S

Zdl

Ω

D

Z

DL

G

Zin

SC13140

Frequency

MHz

Typical Input

Impedance

S

Zin

Ω

Typical Drain

Load Impedance

480 1.69 - j1.48 1.65 - j.40
500 1.63 - j1.40 1.49 - j.09
520 1.75 - j.71 1.36 -j.88

Zdl

Ω

TYPICAL PERFORMANCE

Capacitance vs. Drain Voltage

PD54008 - PD54008S

Drain Current vs. Gate Voltage

1000

f=1MHz

100

Ciss

Coss

10

C, CAPACITANCE (pF)

Crss

1

0 5 10 15

VDS, DRAIN-SOURCE VOLTAGE (V)

Gate-Source Voltage vs. Case Temperature

1.04

1.02

I

D

=3A

4

3.5

3

2.5

2

1.5

Id, DRAIN CURRENT (A)

1

0.5

0

2.5 3 3.5 4 4.5 5

Vgs, GATE-SOURCE VOLTAGE (V)

VDS=10V

1

0.98

V

DS=10V

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

0.96

-25 0 25 50 75

ID= .25A

Tc, CASE TEMPERATURE (°C)

I

D=2A

I

D

I

D=1A

=1.5A

3/10

PD54008 - PD54008S

TYPICAL PERFORMANCE

Output Power vs. Input Power

PD54008

Power Gain vs. Output Power

10

480MHz

8

6

4

Pout, OUTPUT POWER (W)

2

0

0 0.5 1 1.5 2 2.5

500MHz

Pin, INPUT POWER (W)

Drain Efficiency vs.Output Power

60

50

40

30

500MHz

520MHz

520MHz

VDD=7.5V

DQ

I

=150mA

480MHz

14

12

480MH z

500MHz

10

520MHz

8

Gp, POWER GAIN (dB)

6

VDD=7.5V

DQ

I

=150mA

4

012345678910

Pout, OUTPUT POWER (W)

Return Loss vs. Output Power

0

-10

-20

500MHz

480MHz

20

Nd, DRAIN EFFICIENCY (%)

10

VDD=7.5V

DQ

I

=150mA

0

012345678910

Pout, OUTPUT POWER (W)

Output Power vs. Bias Current

12

10

8

6

4

Pout, OUTPUTPOWER (W)

2

0

0 200 400 600 800 1000

Idq,BIAS CURRENT (mA)

VDD=7.5V

IN

P

=1W

480MH z

500MH z

520MHz

520MHz

-30

Rtl, RETURN LOSS (dB)

VDD=7.5V

DQ

= 150mA

I

-40
012345678910

Pout, OUTPUT POWER (W)

Drain Efficiency vs. Bias Current

70

60

50

40

Nd, DRAIN EFFICIENCY (%)

30

0 200 400 600 800 1000

480MH z

500MH z

520MH z

Idq,BIAS CURRENT (mA)

DD

V

=7.5V

IN

P

=1W

4/10

TYPICAL PERFORMANCE

Output Power vs. Drain Voltage

PD54008 - PD54008S

Drain Efficency vs. Drain Voltage

20

15

10

5

Pout, OUTPUT POWER (W)

0

5 6 7 8 9 10 11 12

VDS, DRAIN-SOURCE VOLTAGE(V)

Output Power vs. Gate Bias Voltage

10

8

6

4

520MHz

480MHz

520MHz

Idq =150 mA

IN

P

=1W

480MHz

500MHz

500MHz

60

480MHz

50

40

30

Nd, DRAIN EFFICIENCY (%)

20

56789101112

Idq=150mA

IN

=1 W

P

VDS, DRAIN-SOURCE VOLTAGE (V)

Output Power vs. Input Power

PD54008S

10

480MHz

520MHz

8

500MHz

6

4

500MHz

520MHz

2

Pout,OUTPUT POWER (W)

V
P

0

0 0.5 1 1.5 2 2.5 3 3.5

VGS,GATEBIASVOLTAGE(V)

Power Gain vs. Output Power

16

14

12

10

Gp, POWER GAIN (dB)

8

6

012345678910

520MHz

500MHz

Pout, OUTPUT POWER (W)

VDD=7.5V

DQ

I

=150mA

DD

=7.5V

IN

=1W

480MHz

2

Pout, OUTPUT POWER (W)

VDD=7.5V

DQ

I

= 150 mA

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Pin, INPUT POWER (W)

Drain Efficiency vs. Output Power

70

60

50

40

30

20

Nd,DRAIN EFFICIENCY (%)

10

0

012345678910

Pout,OUTPUT POWER (W)

500MHz

VDD=7.5V

DQ

I

= 150 mA

480MHz

520MHz

5/10

PD54008 - PD54008S

TYPICAL PERFORMANCE

Return Loss vs. Output Power

Output Power vs. Bias Current

0

-10

480MHz

-20

-30

Rtl, RETURN LOSS (dB)

-40
012345678910

500MHz

520MHz

Pout, OUTPUT POWER (W)

Drain Efficiency vs.Bias Current

70

60

50

480MHz

500MHz

520MHz

VDD=7.5V

DQ

=150mA

I

12

Pout, OUTPUT POWER (W)

10

8

6

4

2

0

480MHz

520MHz

500MHz

VDD=7.5V
P

0 200 400 600 800 1000

Idq, BIAS CURRENT (mA)

Output Power vs. Drain Voltage

20

15

10

500MHz

IN= 0.7W

480MHz

520MHz

40

Nd, DRAIN EFFICIENCY (%)

DD

V

IN

P

=7.5V

=0.7W

30

0 200 400 600 800 1000

Idq, BIAS CURRENT (mA)

Drain Efficency vs. Drain Voltage

70

60

500MHz

50

40

Nd, DRAIN EFFICIENCY (%)

30

56789101112

480MH z

520MHz

Idq=150mA

IN

P

=0.7W

VDS, DRAIN-SOURCE VOLTAGE (V)

5

Pout,OUTPUT POWER(W)

Idq=150mA

IN

P

=0.7W

0

56789101112

VDS,DRAIN-SOURCE VOLTAGE (V)

Output Power vs. Gate Bias Voltage

10

480MHz

8

500MHz

520MHz

DD

V

IN

P

=0.7W

=7.5V

6

4

Pout,OUTPUT POWER (W)

2

0

0 0.5 1 1.5 2 2.5 3 3.5

VGS,GATEBIASVOLTAGE(V)

6/10

TEST CIRCUIT SCHEMATIC

PD54008 - PD54008S

TEST CIRCUIT COMPONENT PART LIST

B1,B2 FERRITE BEAD R2
C1,C14 300pF, 100 mil CHIP CAPACITOR R3

C2,C3,C4,C11,
C12,C13

C6,C18 pF 100 mil CHIP CAP Z2 1.082” X 0.080” MICROSTRIP

C9,C15

C8,C16 0.1mF, 100 mil CHIP CAP Z4,Z5 0.260” X 0.223” MICROSTRIP
C7,C17 1,000pF 100 mil CHIP CAP Z6 0.050” X 0.080” MICROSTRIP
C5, C10 33pF,100 mil CHIP CAP Z7 0.551” X 0.080” MICROSTRIP
L1 56nH, 7 TURN, COILCRAFT Z8 0.825” X 0.080” MICROSTRIP
N1,N2 TYPE N FLANGE MOUNT Z9 0.489” X 0.080” MICROSTRIP

R1

1 TO 20 pF TRIMMER CAPACITOR Z1 0.471” X 0.080” MICROSTRIP

10

µF,50V ELECTROLYTIC

CAPACITOR

15

Ω, 1W CHIP RESISTOR

Z3 0.372” X 0.080” MICROSTRIP

BOARD

Ω, 1W CHIP RESISTOR

1,0k

Ω, 1W CHIP RESISTOR

33 k

ROGER, ULTRA LAM 2000

ε

THK 0.030”
2oz ED Cu 2 SIDES

r=2.55

7/10

PD54008 - PD54008S

TEST CIRCUIT

TEST CIRCUITTEST CIRCUIT

TEST CIRCUIT PHOTOMASTER

4 inches

6.4 inches

8/10

PowerSO-10RF (Straight Lead) MECHANICAL DATA

PD54008 - PD54008S

PowerSO-10RF (Formed Lead) MECHANICAL DATA

9/10

PD54008 - PD54008S

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to change withoutnotice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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