SGS Thomson Microelectronics PD54008 Datasheet
PD54008 - PD54008S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD54008 is acommon source N-Channel, enhancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54008’s superior linearity performance makes it an ideal solution for portable radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
The
LdmoST
Plastic FAMILY
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54008
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54008S XPD54008S
PRELIMINARY DATA
XPD54008
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V
(BR)DSS
V
I
P
DISS
T
T
STG
GS
D
Drain Source Voltage 25 V
Gate-Source Voltage ±20 V
Drain Current 5 A
Power Dissipation (@ Tc= 700C)
Max. Operating Junction Temperature 165 0
j
Storage Temperature -65 to 165 0
CASE
=25OC)
73 W
THERMAL DATA
R
th(j-c)
May 2000
Junction-Case Thermal Resistance 1.3
0
C/W
C
C
1/10
PD54008 - PD54008S
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
C
C
OSS
C
FS
ISS
RSS
VGS=0V VDS=25V
VGS=20V VDS=0V
VDS=10V ID= 150 mA
VGS=10V ID=2A
2.0 5.0 V
1 µA
1 µA
0.7 V
VDS=10V ID= 2 A 2.0 2.5 mho
VGS=0V VDS= 7.5 V f = 1 MHz
91 pF
VGS=0V VDS= 7.5 V f = 1 MHz 68 pF
VGS=0V VDS= 7.5 V f = 1 MHz
8.5 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
G
PS
η
D
LOAD
Mismatch
f = 500 MHz VDD=7.5V IDQ= 150 mA
f = 500 MHz VDD=7.5V P
f = 500 MHz VDD=7.5V P
f = 500 MHz V
= 9.5 V P
DD
=8W IDQ= 150 mA
OUT
=8W IDQ= 150 mA
OUT
=8W IDQ= 150 mA
OUT
ALL PHASE ANGLES
8W
10 dB
50
20:1 VSWR
%
SC15200
PD54008
Frequency
MHz
480 2.00 - j1.44 1.41 - j.38
500 1.92 - j1.21 1.58 - j.70
520 2.18 - j.88 1.61 - j1.05
2/10
PIN CONNECTION
Zin
Ω
SOURCE
DRAINGATE
IMPEDANCE DATA
PD54008S
Zdl
Ω
D
Z
DL
G
Zin
SC13140
Frequency
MHz
Typical Input
Impedance
S
Zin
Ω
Typical Drain
Load Impedance
480 1.69 - j1.48 1.65 - j.40
500 1.63 - j1.40 1.49 - j.09
520 1.75 - j.71 1.36 -j.88
Zdl
Ω
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
PD54008 - PD54008S
Drain Current vs. Gate Voltage
1000
f=1MHz
100
Ciss
Coss
10
C, CAPACITANCE (pF)
Crss
1
0 5 10 15
VDS, DRAIN-SOURCE VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
1.04
1.02
I
D
=3A
4
3.5
3
2.5
2
1.5
Id, DRAIN CURRENT (A)
1
0.5
0
2.5 3 3.5 4 4.5 5
Vgs, GATE-SOURCE VOLTAGE (V)
VDS=10V
1
0.98
V
DS=10V
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
0.96
-25 0 25 50 75
ID= .25A
Tc, CASE TEMPERATURE (°C)
I
D=2A
I
D
I
D=1A
=1.5A
3/10
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