SGS Thomson Microelectronics PD54003 Datasheet
PD54003 - PD54003S
RF POWER TRANSISTORS
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD5400 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54003 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54003’s superior linearity performance makes it an ideal solution for portable radio.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
The
LdmoST
Plastic FAMILY
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD54003
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD54003S XPD54003S
PRELIMINARY DATA
XPD54003
ABSOLUTE MAXIMUM RATINGS(T
Symbol Parameter Value Unit
V
(BR)DSS
V
I
P
DISS
T
T
STG
GS
D
Drain Source Voltage 25 V
Gate-Source Voltage ±20 V
Drain Current 4 A
Power Dissipation (@ Tc= 700C)
Max. Operating Junction Temperature 165 0
j
Storage Temperature -65 to 165 0
CASE
=25OC)
52.8 W
THERMAL DATA
R
th(j-c)
May 2000
Junction-Case Thermal Resistance 1.8
0
C/W
C
C
1/10
PD54003 - PD54003S
ELECTRICAL SPECIFICATION(T
CASE
=250C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
g
C
C
OSS
C
FS
ISS
RSS
VGS=0 V VDS=25V
VGS=20V VDS=0V
VDS=10V ID=50mA
VGS=10V ID=1A
2.0 5.0 V
1 µA
1 µA
1.3 V
VDS=10V ID= 1 A 1.5 mho
VGS=0V VDS= 7.5 V f = 1 MHz
59 pF
VGS=0V VDS= 7.5 V f = 1 MHz 43 pF
VGS=0V VDS= 7.5 V f = 1 MHz
4.0 pF
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
P
OUT
G
PS
η
D
LOAD
Mismatch
f = 500 MHz VDD=7.5V IDQ=50mA
f = 500 MHz VDD=7.5V P
f = 500 MHz VDD=7.5V P
f = 500 MHz V
= 9.5 V P
DD
=3W IDQ=50mA
OUT
=3W IDQ=50mA
OUT
=3W IDQ=50mA
OUT
ALL PHASE ANGLES
3W
12 dB
55
20:1 VSWR
%
SC15200
PD54003
Frequency
MHz
520 1.993 - j1.098 2.564 + j0.656
500 1.553 - j1.251 2.661 + j0.139
480 2.245 - j0.077 3.436 + j1.013
2/10
PIN CONNECTION
Zin
Ω
SOURCE
DRAINGATE
IMPEDANCE DATA
PD54003S
Zdl
Ω
D
Z
DL
G
Zin
SC13140
Frequency
MHz
Typical Input
Impedance
S
Zin
Ω
Typical Drain
Load Impedance
520 1.534 - j2.104 2.524 + j2.369
500 1.209 - j2.451 3.192 + j3.147
480 1.400 - j3.986 2.805 + j2.724
Zdl
Ω
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
PD54003 - PD54003S
Drain Current vs. Gate Voltage
1000
f=1MHz
C, CAPACITANCE (pF)
100
10
Ciss
Coss
Crss
1
051015
VDD, DRAIN VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
1.06
1.04
1.02
8
7
Vds=10V
6
5
4
3
Id, DRAIN CURRENT(A)
2
1
0
123456789
VGS, GATE-SOURCE VOLTAGE (V)
1
I
D=1.5A
0.98
0.96
0.94
0.92
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Vds=10V
D=0.5A
I
D
I
=0.25A
D=2A
I
D=1A
I
-250 255075100
Tc, CASE TEMPERATURE (°C)
3/10
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