SDASerial Data Address Input / Output
SCLSerial Clock
V
BAT
V
CC
V
SS
Frequency Test / Output Driver
(Open Drain)
Battery Supply Voltage
Supply Voltage
Ground
OSCI
SCL
V
CC
M41T56
V
SS
V
BAT
OSCO
SDA
FT/OUT
AI02304B
1/19March 2000
M41T56
Figure 2A. SO8 Pin Connections
M41T56
OSCIV
V
BAT
SS
1
2
3
4
8
7
6
5
AI02306B
CC
FT/OUTOSCO
SCL
SDAV
DESCRIPTION
®
The M41T56 TIMEKEEPER
is a low power 512
bit static CMOS RAM organized as 64 words by 8
bits. A built-in 32.768 kHz oscillator (external cry stal controlled) and the first 8 bytes of the RAM are
used for the clock/calendar function and are configured in binary coded decimal (BCD) format. Addresses and data are transferred serially via a twoline bi-directional bus. The built-in address register
is incremented automatically after each write or
read data byte.
The M41T56 clock has a built-in power sense circuit which detects power failures and automatically switches to the battery supply during power
failures. The energy needed to sustain the RAM
and clock operations can be supplied from a small
lithium co in cell.
Typical data retention time is in excess of 10years
with a 50mAh 3V lithium cell. The M41T56 is supplied in 8 lead Plastic SOIC package or 2 8 lead
SNAPHAT package.
The 28 pin 330mil SOIC provides sockets with
gold plated contacts at both ends for direct con-
Figure 2B. SOH28 Connections
NCV
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
M41T56
28
27
26
25
24
23
22
21
20
19
18
17
16
15
AI03607
CC
NC
FT/OUT
NC
NC
NC
NC
NC
SCL
NC
NC
NC
SDA
NC
nection to a separate SNAPHAT housing cont aining the battery and crystal. The unique design
allows the SNAPHAT battery package to be
mounted on top of the SOIC package after the
completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery and c rystal dam age due to
the high temperatures required for device surfacemounting. The SNAPHAT housing is keyed to prevent reverse insertion. The SOIC and battery/crystal packages are shipped separately in plastic antistatic tubes or in Tape & Reel form.
For the 28 lead SOIC, the battery/crystal package
(i.e. SNAPHAT) part number is "M4TxxBR12SHx".
Caution: Do not place the SNAPHAT battery/crystal package "M4Txx-BR12SHx" in conductive
foam since this will drain the lithium button-cell
battery.
2/19
M41T56
Table 2. Absolute Maximum Ratings
SymbolParameterValueUnit
T
A
T
STG
(2)
T
SLD
V
IO
V
CC
I
O
P
D
Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and function al operation of th e device at thes e or any other conditions above those indic at ed in the operational section
of this spec ification is not im plied. Exposure t o the abso lute max imum rat ing cond itions for extende d period s of tim e may affe ct
reliability.
2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION: Negative undershoo ts bel ow –0.3V are not al l owed on any pin whil e i n the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
Ambient Operating Temperature–40 to 85°C
Storage Temperature (VCC Off, Oscillator Off)
Lead Solder Temperature for 10 seconds260°C
Input or Output Voltages–0.3 to 7V
Supply Voltage–0.3 to 7V
Output Current20mA
Power Dissipation0.25W
OPERATION
The M41T56 clock operates as a slave device on
the serial bus. Access is obtained by implementing
a start condition followed by the correct slave address (D0h). The 64 bytes contained in the device
can then be accessed sequentially in the following
order:
1.Seconds Register
2.Minutes Register
3.Century/Hours Register
4.Day Register
5.Date Register
(1)
SNAPHAT–40 to 85
SOIC–55 to 125
The clock continually monitors V
tolerance condition. Should V
CC
CC
fall below V
°C
for an out of
PFD
the device terminates a n access in progress and
resets the device address counte r. Inputs to the
device will not be recognized at this time to prevent erroneous data fr om being writt en to the device from an out of tolerance system. W hen V
falls below V
, the device automatically switch-
BAT
CC
es over to the battery and powers down into an ultra low current mode of operation to conserve
battery life. Upon power-up, the device switches
from battery to V
when V
Note: 1. When CEB is set to ’1’, CB will toggle from ’0’ to ’1’ or from ’1’ to ’0’ every 100 years (dependent upon the initial value set).
Keys: S = SIGN Bit;
When CEB is set to ’0’, CB will not toggle.
FT = FREQUENCY TEST Bit;
ST = STOP Bit;
OUT = Output level;
X = Don’t care;
CEB = Century Enable Bit;
CB = Centur y B i t.
Function/Ran ge
BCD Format
4/19
M41T56
Table 4. AC Measurement Conditions
Input Rise and Fall Times≤ 5ns
Input Pulse Voltages0 to 3V
Input and Output Timing Ref. Voltages1.5V
Note that Output Hi-Z is defined as the point where data is no longer
driven.
2-WIRE BUS CHARACTERISTICS
This bus is intended for communication between
different ICs. It consists of two lines: one bi-directional for data signals (SDA) and one for clock signals (SCL). Both the SDA and the SCL lines must
be connected to a positive supply voltage via a
pull-up resistor.
The following protocol has been defined:
– Data transfer may be initiated only when the bus
is not busy.
– During data trans fer, the dat a line mus t remain
stable whenever the clock line is High.
– Changes in the dat a line while the clock line is
High will be interpreted as control signals.
Accordingly, the following bus conditions have
been defined:
Bus not busy. Both data and clock lines remain
High.
Start data transfer. A change in the state of t he
data line, from High to Low, while the clock is High,
defines the START condition.
Stop data transfer. A change in the state of the
data line, from Low to High, while the clock is High,
defines the STOP condition.
Figure 4. AC Testing Load Circuit
0.8V
0.2V
CC
CC
0.7V
0.3V
AI02568
CC
CC
Data valid. The state of the data line represents
valid data when after a start condition, the data line
is stable for the duration of the High period of the
clock signal. The data on the line may be changed
during the Low period of the clock signal. There is
one clock pulse per bit of data.
Each data transfer is initiated with a start condition
and terminated with a stop condition. The number
of data bytes transferred between the start and
stop conditions is not limited. The information is
transmitted byte-wide and each receiver acknowledges with a ninth bit.
By definition, a device that gives out a message is
called "transmitter", the receiving de vice t hat g ets
the message is called "rece iver". The device that
controls the message is called "master". The devices that are controlled by the master are cal led
"sla ve s".
Table 5. Capacitance
(T
= 25 °C, f = MHz)
A
SymbolParameterMinMa xUnit
C
IN
C
OUT
t
LP
Note: 1. Effectiv e capacitan ce measured with power supply at 5V.
2. Sampled, not 100% tested.
3. Outputs deselect ed.
Input Capacitance (SCL)7pF
(3)
Output Capacitance (SDA, FT/OUT)10pF
Low-pass filter input time constant (SDA and SCL)0.251µs
(1, 2)
5/19
M41T56
Table 6. DC Characteristics
(T
= –40 to 85 °C; VCC = 4.5V to 5.5V)
A
SymbolParameterTest ConditionMinTypMaxUnit
I
I
I
CC1
I
CC2
V
V
V
V
BA T
I
BA T
Note: 1. STMicro el ectronics recommend s t he RAYOVAC BR 1225 or BR1632 (or equivalent) as the battery supply.
Input Leakage Current
LI
Output Leakage Current
LO
Supply Current Switch Frequency = 100kHz300µA
Supply Current (Standby)
Input Low Voltage–0.3
IL
Input High Voltage
IH
Output Low Voltage
OL
(1)
Battery Supply Voltage2.533.5V
Battery Supply Current
0V ≤ V
0V ≤ V
SCL, SDA = V
I
= 5mA, VCC = 4.5V
OL
T
= 25°C, VCC = 0V,
A
Oscillator ON, V
Table 7. Power Down/Up Trip Points DC Characteristics
IN
OUT
≤ V
≤ V
CC
CC
CC
– 0.3V
= 3V
BAT
±1µA
±1µA
100µA
1.5
3V
CC
0.4V
450550nA
(1)
+ 0.8
(TA = –40 to 85 °C)
SymbolParameterMinTypMaxUnit
V
PFD
V
SO
Note: 1. All voltages referenced to VSS.
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
1.2 V
BA T
1.25 V
V
BAT
BA T
1.285 V
BA T
V
V
V
V
Table 8. Crystal Electrical Characteristics
(Externally Supplied if using the SO8 package)
SymbolParameterMinTypMaxUnit
f
O
R
S
C
L
Note: L oad cap acitors are inte grated w ithin the M 41T56 . Circuit b oard lay out consi deration s for the 32.768 kH z crysta l of minimu m trace
lengths and isolation from RF generating signals should be taken into account .
STMicroelectron i cs recommends the KDS DT-38 Tuning Fork Type quartz crystal for industrial temperature op erat i ons.
KDS can b e contacted at 9 13-491-6825 or http://w ww.kd sj.co.jp for furt her information on this crystal type.
All SNAP HA T battery/cry st al tops meet thes e specifications.
Resonant Frequency32.768kHz
Series Resistance35kΩ
Load Capacitance12.5pF
6/19
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