SGS Thomson Microelectronics M36W108AT, M36W108AB Datasheet

M36W108AT

M36W108AB

8 Mbit (1Mb x8, Boot Block) Flash Memory and

1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

PRELIMINARY DATA

■ SUPPLY VOLTAGE

CCF

= V

–V

Erase and Read

■ ACCESS TIME: 100ns

■ LOW POWER CONSUMPTION

– Read: 40mA max. (SRAM chip) – Stand-by: 30µA max. (SRAM chip) – Read: 10mA max. (Flash chip) – Stand-by: 100µA max. (Flash chip)

FLASH MEMORY

■ 8 Mbit (1Mb x 8) BOOT BLOCK ERASE

■ PROGRAMMING TIME: 10µs typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Byte-by-Byte – Status Register bits and Ready/Busy Output

■ SECURITY PROTECTION MEMORY AREA

■ INSTRUCTION ADDRESS CODING: 3 digits

■ MEMORY BLOCKS

– Boot Block (Top or Bottom location) – Parameter and Main Blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h – Device Code, M36W108AT: D2h – Device Code, M36W108AB: DCh

= 2.7V to 3.6V: for Program,

CCS

BGA

LBGA48 (ZM)

6 x 8 solder balls

Figure 1. Logic Diagram

CCF

A0-A19

RP E1S E2S

M36W108AT M36W108AB

LGA48 (ZN)

6 x 8 solder lands

CCS

LGA

DQ0-DQ7

SRAM

■ 1 Mbit (128Kb x 8)

■ POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

■ LOW V

March 1999

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

DATA RETENTION: 2V

AI02620

1/36

M36W108AT, M36W108AB

Figure 2. LBG A and LGA Connection s (Top V iew)

654321

CCS

A17

CCF

A11A14

A8A18V

DQ7 DQ5

DQ0

A19

A16NC

A10 E1S

DQ1DQ2DQ4A5NC

A1NCEFV

A2A3DQ3NCNC

A4A7V

E2SRBA13DQ6NC

A9A15A12NC

AI02508

Table 1. Signal Names

A0-A16 Address Inputs A17-A19 Address Inputs for Flash Chip

DQ0-DQ7

, E2S Chip Enable for SRAM Chip

E1S G W RP RB V

CCF

CCS

NC Not Connected Internally

2/36

Data Input/Outputs, Command Inputs for Flash Chip

Chip Enable for Flash Chip

Output Enable Write Enable Reset for Flash Chip Ready/Busy Output for Flash Chip Supply Voltage for Flash Chip Supply Voltage for SRAM Chip Ground

DESCRIPTION

The M36W108A is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.

The two components, of the package’s overall 9 Mbit of memory, are distinguishable by use of the three chip enable lines: E F E1S

and E2S for the SRAM.

for the Flash memory,

The Flash memory component is identical with the M29W008A device. It is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-byByte basis using only a single 2.7V to 3.6V V

CCF

supply. For Program and Erase operations the necessary high voltages are gen erated internally. The device can also be programmed in standard programmers. The array matrix organizat ion allows each block to be e rased and reprogrammed without affecting other blocks.

Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming, B lock

M36W108AT, M36W108AB

Table 2. Absolute Maximum Ratings

Symbol Parameter Value Unit

BIAS

STG

(2)

CCF

CCS

(EF, RP)

PD Power Dissipation 0.7 W

Note: 1. Except for the rating "O perating T em perature R ange", stresses abo ve those listed in the T able "Absolute Maxi m um Ratings" may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indi cated in t he Operating sect i ons of thi s specifi cation i s not impl i ed. Exposure to Absolute M aximum Rating c onditions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroel ectronics SURE Program an d other relevan t qual ity docum en ts .

2. Minimum Voltage may undershoot to –2V during transiti on and for less t han 20ns.

3. Depends on range.

Ambient Operating Temperature

Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C

Input or Output Voltage Flash Chip Supply Voltage –0.6 to 5 V

SRAM Chip Supply Voltage –0.3 to 4.6 V EF, RP Voltage 0.6 to 13.5 V

and Chip Erase, Erase Suspend and Resume are written to the device in cycles of comm ands to a Command Interface usi ng standard m icroprocessor write timings.

The SRAM compone nt is a low power SRAM that features fully static operation requiring no external clocks or timing strobes, with e qual address access and cycle times. It requires a single 2.7V to

3.6V V

supply, and all inputs and outpu ts are

CCS

TTL compatible.

SIGNAL DESCRIPTIONS

See Figure 1 and Table 1. Address Inputs (A0-A16). Addres ses A0 t o A16

are common inputs for the Flash chip and the SRAM chip. The address inputs for the Flash memory or the SRAM array are l atched during a write operation on the falling edge of Flash Chip Enable (EF Write Enable (W

), SRAM Chip Enable (E 1S or E2S) or

Address Inputs (A17-A19). Address A17 t o A 19 are address inputs for the Flash chip. They are latched during a write operation on the falling edge of Flash Chip Enable (EF

) or Write Enable (W).

Data Input/Outputs (DQ0-DQ7). The input is data to be programmed in the Flash or SRAM memory array or a command to be written to the C.I. of the Flash chip. Both are latched on the rising edge of Flash Chip Enable (EF Enable (E1S

or E2S) or Write Enable (W). The output is data from the Flash memory or SRAM array, the Electronic Signature Manufacturer or Device codes or the Status register Dat a Polling bit

(1)

(3)

), SRAM Chip

–40 to 85 °C

–0.5 to V

+0.5

DQ7, the Toggle Bits DQ6 and DQ2, the Error bit DQ5 or the Erase Timer bit DQ3. Outputs are valid when Flash Chip Enable (EF able (E1S

or E2S) a nd O utp ut Enable (G ) are ac-

) or SRAM Chip En-

tive. The output is high impedance when the both the Flash chip and the SRAM chip are deselected or the outputs are disabled and when Reset (R P is at a V

Flash Chip Enable (EF

). The Chip Enable input for Flash activates the memory control logic, input buffers, decoders and sense a mpl ifiers. E F

at V deselects the memory and reduces the power consumption to the standby level. EF

can also be used to control writing to the command register and to the Flash memory array, while W at V

. It is not allowed to set EF at VIL, E1S at V

remains

and E2S at VIH at the same time.

SRAM Chip Enable (E1S

, E2S). The Chip En-

able inputs for SRAM activate the memory control logic, input buffers, decoders and sense amplifiers. E1S

at VIH or E2S at VIL deselects the mem ory and reduces the power consumption to the standby level. E1S

and E2S can also be used to control writing to the SRAM memory array, while W

remains at VIL. It is not allowed to set EF at VIL,

E1S

at VIL and E2S at VIH at the same time.

Output Enable (G

). The Output Enable gates the

outputs through the data buffers during a read operation. When G

is High the outpu ts are High im-

pedance.

Write Enable (W

). The Write Enable input con-

trols writing to the Command Register of the Flash chip and Address/Data latches.

)

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M36W108AT, M36W108AB

Table 3. Main Operation M od es

(1)

Operation Mode EF E1S E2S G W RP DQ7-DQ0

Flash Chip Read

SRAM Chip Read

Flash Chip Write

SRAM Chip Write

Flash Chip Output Disable

SRAM Chip Output Disable Flash Chip Stand-by

Flash Chip Reset

SRAM Chip Stand-by

Note: 1. X = VIL or VIH.

XX X

XXX

X Data Output

X Data Input XHi-Z XHi-Z XHi-Z

Data Output Data Output

Data Input Data Input

Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z

Reset Input (RP). The Reset input provides hardware reset of the Flash chip. Reset of the Flash memory is achieved by pulling RP at least t

. When the reset pulse is given, if the

PLPX

to VIL for

Flash memory is in Read or Standby modes, it will be available for new operations in t rising edge of RP

PHEL

after the

If the Flash memory is in E rase or P rogram m ode the reset w ill take t Busy (RB

) signal will be held at VIL. The end of the

during which the Ready/

PLYH

Flash memory reset will be ind icated by the rising edge of RB

. A hardware reset during an Erase or Program operation will corrupt the data being programmed or the block(s) being erased. See Table 18 and Figure 10.

Ready/Busy Output (RB

). Ready/Busy is an

open-drain output of the Flash chip. It gives the internal state of the Program/Erase Controller (P/ E.C.) of the Flash device. When RB

is Low, the Flash device is busy with a Program or Erase operation and it will not a ccept any additional program or erase instructions except the Erase Suspend instruction. When RB

is High, the Flash device is ready for any Read, Program or Eras e operation. The RB

will also be High when the Flash memory is put in Erase Suspend or Standby modes.

Supply Voltag e . Fl ash m em ory powe r su p-

CCF

ply for all operations (Read, Program and Erase).

Supply Voltage. SRAM power supply for

CCS

all operations (Read, Program).

Ground. VSS is the reference for all voltage

measurements.

POWE R SU PPLY Power Up. The Flash memory Command Inter-

face is reset on power up to Read Array . Either Flash Chip Enable (EF must be tied to V

) or Write Enable (W) inputs

during Power Up to allow max-

imum security and the possib ility to write a command on the first rising edge of EF write cycle initiation is blocked when V V

LKO

and W . Any

is below

CCF

Supply Rails. Normal precautions must be taken for supply voltage decoupling; each device in a

, V

system should have the V

CCF

pled with a 0.1µF capacitor close to the V V

and VSS pins. The PCB trace widths sho uld

CCS

be sufficient to carry t he V currents and the V

erase current required.

CCF

and V

rails decou-

CCS

CCF

program

4/36

Figure 3. Internal Function a l Arrangement

M36W108AT, M36W108AB

CCF

RP RB

A0-A19 DQ0-DQ7

A0-A16

Flash Memory

(1Mb x 8)

CCS

1 Mbit SRAM

(128 Kb x 8)

8 Mbit

E1S

E2S

AI02444

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M36W108AT, M36W108AB

FLASH MEMORY COMPONENT Organization and Architecture Organization. The Flash chip is organized as

1Mbit x 8. The m emory uses the address inputs A0-A19 and the Data Input/Outputs DQ0-DQ7. Memory control is provided by Chip Enable (EF Output Enable (G

) and Write Enable (W) inputs.

Erase and Program operations are controlled by an internal Program/Erase Controller (P/E.C.). Status Register data output on DQ7 provides a Data Polling signal, while Status Register data outputs on DQ6 and D Q2 provide Toggle signals to indicate the state of the P/E.C. operations. A Ready/Busy (RB

) output indicates the c ompletion

of the internal algorithms. Memory Blocks. The device features asymmetri-

cally blocked architecture providing system memory integration. Both Top and Bottom Boot Block devices have an array of 19 blocks, one Boot Block of 16K Bytes, two P arameter Blocks of 8K Bytes, one Main Block of 32K Bytes a nd fifteen Main Blocks of 64K Bytes. The Top Boot Block

Table 4. Top Boot Block, Flash Block Address

Size (KWord) Address Range

16 FC000h-FFFFFh

8 FA000h-FBFFFh

8 F8000h-F9FFFh 32 F0000h-F7FFFh 64 E0000h-EFFFFh 64 D0000h-DFFFFh 64 C0000h-CFFFFh 64 B0000h-BFFFFh 64 A0000h-AFFFFh 64 90000h-9FFFFh 64 80000h-8FFFFh 64 70000h-7FFFFh 64 60000h-6FFFFh 64 50000h-5FFFFh 64 40000h-4FFFFh 64 30000h-3FFFFh 64 20000h-2FFFFh 64 10000h-1FFFFh 64 00000h-0FFFFh

version has the Boot Block at the top of the mem ory address space and the Bottom Boot Block version locates the Boot Block starting at the bottom. The memory maps and bl ock address tables are showed in Figures 4, 5 and Tables 4, 5. Each block can be e rased sepa rately, any combi nation

of blocks can be specified for mult i-block erase or the entire chip may be erased . The Erase operations are managed automatically by the P/E.C. The block erase operation can be s uspended in order to read from or program to any block not being erased, and then resumed.

Device Operations

The following operations can be performed using the appropriate bus cycles: Read Array, Write command, Output Disable, Standby and Reset (see Table 6).

Read. Read operations are used to output the contents of the Memory Array, the Electronic Signature or the Status Register. Both Chip Enable

) and Output Enable (G) must be low, with

(EF Write Enable (W

) high, in order to read t he ou tput

of the memory.

Table 5. Bottom Boot Block, Flash Block Address

Size (KWord) Address Range

64 F0000h-FFFFFh 64 E0000h-EFFFFh 64 D0000h-DFFFFh 64 C0000h-CFFFFh 64 B0000h-BFFFFh 64 A0000h-AFFFFh 64 90000h-9FFFFh 64 80000h-8FFFFh 64 70000h-7FFFFh 64 60000h-6FFFFh 64 50000h-5FFFFh 64 40000h-4FFFFh 64 30000h-3FFFFh 64 20000h-2FFFFh 64 10000h-1FFFFh 32 08000h-0FFFFh

8 06000h-07FFFh 8 04000h-05FFFh

16 00000h-03FFFh

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M36W108AT, M36W108AB

Write. Write operations are u sed to give Ins truc-

tion Commands to the memory or to latch input data to be programmed. A write operation is initiated when Chip Enable (EF able (W

) is at VIL with Output Enable (G) a t VIH. Addresses are latched on t he falling edge of W EF

whichever occurs last. Commands and Input

Data are latched on the rising edg e of W

) is Low and Write En-

or EF

whichever occurs first. Output Disa bl e . The data outputs are high im-

pedance when the Output Enable (G Write Enable (W

) at VIH.

) is at VIH with

Standby. T he memory is in standby when Chip Enable (EF

) is at VIH and the P/E.C. is idle. The power consumption is reduced to the standby level and the outputs are high impedance, independent of the Output Enable (G

) or Write Enable (W) in-

puts. Automatic Standby. After 150ns of bus inactivity

and when CMOS levels are driving the addresses, the chip automatically enters a pseudo-standby mode where consumption is reduced to the CMOS

Instructions and Commands

Seven instructions are defined (see Table 7) to perform Read Array, Auto Select (to read the Electronic Signature), Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. The internal P/E.C. automatically handles all timing and verification of the Program and Erase operations. The Status Register Data Polling, Toggle, Error bits and the RB

output may be read at any time, during programming or erase, to monitor the progress of the operation.

Instructions, made up of commands wri tten in cycles, can be given to the Program/Erase Controller through a Command Interface (C.I.).

The C.I. latches commands written to the memory. Commands are made of address and data sequences. Two coded cycles unlock the Command Interface. They are followed by an input command or a confirmation command. The coded sequence consists of writing the data AAh at the address 5555h during the first cycle and the data 55h at the address 2AAAh during the second cycle.

standby value, while outputs still drive the bus.

Table 6. Flash User Bus Operations

Operation EF G W RP A15 A12 A9 A6 A1 A0 DQ7-DQ0

Read Byte Write Byte Output Disable Stand-by Reset X X X

Note: 1. X = VIL or VIH.

V V V V

(1)

V V V

A15 A12 A9 A6 A1 A0 Data Output

A15 A12 A9 A6 A1 A0 Data Input

V V V

XXXXXX Hi-Z

Table 7. Read Flash Electronic Signature

Code Device EF

Manufact. Code

M36W108AT

Device Code

M36W108AB

G W A1 A0

Other

Addresses

V V

Don’t care 20h

Don’t care D2h

Don’t care DCh

DQ7-DQ0

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M36W108AT, M36W108AB

Table 8. Flash Commands

Hex Code Command

00h Invalid/Reserved 10h Chip Erase Confirm 20h Reserved 30h Block Erase Resume/Confirm 80h Set-up Erase

90h

A0h Program B0h Erase Suspend F0h Read Array/Reset

Read Electronic Signature/ Block Protection Status

Instructi ons a re co mpose d of up to si x cycles. The first two cycles input a Coded Sequence to the Command Interface which is common to all instructions (s ee Tab le 9). The third cycl e i nput s th e instruction set-up command. Subsequent cycles output the addressed data or Electronic Signature for Read operations. In order to give additional data protection, the instructions for Program and Block or Chip Erase require further command inputs. For a Program instru ction, the fourth command cycle inputs the address and data to be programmed. For an Erase instruction (block or chip), the fourth and fifth cycles input a further Coded Sequence before the Erase confirm command on the sixth cycle. Erasure of a memory block may be suspended, in order to read data from another block or to program da ta in another block, and then resumed.

When power is first applied or if V

, the command interface is reset to Read Ar-

LKO

falls be low

CCF

ray.

Command sequencing must be followed exactly. Any invalid combination of commands will reset the device to Read Array. The inc reased number of cycles has been chosen to assure maximum data security.

Read/Reset (RD) Instruction. The Read/Reset instruction consists of one write cycle giving the command F0h. It can be optionally preceded by the two Coded cycles. Subsequent read operations will r ead the memory array a ddressed and output the data read. A wait state of t

PLYH

is necessary after Read/Reset prior to any valid read if the memory was in an Erase or Program mode when the RD instruction is given (see Table 18 and Figure 10).

Auto Select (AS) Instruction. This instruction uses the two Coded cycles followed by one write cycle giving the c ommand 90h to addres s 5555h for command set-up. A subsequent read will output the Manufacturer Code or the Device Code (Electronic Signature) depending on the levels of A0 and A1 (see Table 7). The Electronic Signature can be read from the memory allowing programming equipment or applications to automatically match their interface to the characteristics of the Flash memory. The Manufacturer Code, 20h, is output when the addresses lines A0 and A1 are at

, the Device Code is output whe n A0 is at V

with A1 at VIL. Other address inputs are ignored. Program (PG) Instru ctio n . This in struction uses

four write cycles. The Program command A0h is written to address 5555h on the third cycle after two Coded Cycles. A fourth write operation latches the Address and the Data to be written and starts the P/E.C. Read operations output the Status Register bits after the programming has started. Memory programming i s m ade only by writing ’0’ in place of ’1’. Status bits DQ6 and DQ7 determine if programming is on-going and DQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. In t his case, DQ 2 wi ll toggle at the address being programmed.

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M36W108AT, M36W108AB

Block Erase (BE) Instruction. This instruction

uses a minimum of six write cycles. The Erase Set-up command 80h is written to address 5555h on third cycle after the two Coded cycles. The Block Erase Confirm command 30h is similarly written on the sixth cycle after another two Coded Cycles. During the input of the second comm and an address within the b lock to be erased is given and latched into the memory.

Additional block Erase Confirm commands and block addresses can be written subsequently to erase other blocks i n paral l el, wit h out fu rthe r Co ded cycles. The erase will start after the erase timeout period (see Erase Timer Bit DQ3 description). Thus, additional Erase Confirm commands for other blocks must be given within this delay. The input of a new Erase Confirm command will restart the timeout period. The status of the internal timer can be monitored through the level of DQ3, if DQ3 is ’0’ the Block Erase Command has been given and the timeout is running, if DQ3 is ’1’, the timeout has expired and the P/E.C. is erasing the block(s). If the second command gi ven is not an erase confirm or if the Coded cy cles are wrong, the instruction aborts, and the device is reset to Read Array. It is not necessary to program the block with 00h as the P/E.C. will do this automatically before to erasing to FFh. Read operations after the sixth rising edge of W

or EF output the Status Register

bits. During the execution of the erase by the P/E.C.,

the memory only accepts the Erase Suspend (ES) and Read/Reset (RD) instructions. A Read/Reset command will definitively abo rt erasure and result in invalid data in blocks being erased. A complete state of the block erase operation is given by the Status Register bits (see DQ2, DQ3, DQ5, DQ 6 and DQ7 description).

Chip Erase (CE) Instruction. This instruction uses six write cycles. The Erase Set- up command 80h is written to address 5555h on the third cycle after the two Coded Cycles. The Chip Erase Confirm command 10h is similarly written on the sixth cycle after another two Coded Cycles. If the sec-

ond command given is not an erase confirm or if the Coded Sequence is wrong, the instruction aborts and the device is reset to Read Array. It is not necessary to program the array with 00h first as the P/E.C. will automatically do this before erasing it to FFh. Read operations after the sixth rising edge of W

or EF output the Status Register bits. A complete state of the chip erase o peration is given by the Status Register bits (see DQ2, DQ3, DQ5, DQ6 and DQ7 description).

Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruction which consists of writing the command B0h without any specific address. No Coded Cycles are required. It permits reading of data from another block and progra mming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command du ring the erase timeout period will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops toggling when the P /E.C. is suspended. The Toggl e bits will stop toggling be-

tween 0.1µs and 15µs after the Erase Suspend (ES) command has been written. Th e device will then automatically be set to Read Mem ory Array mode. When erase is suspended, a Read from blocks being erased will output DQ 2 toggling and DQ6 at '1'. A Read from a block not being erased returns valid data. During suspension the memory will respo nd only to the Erase Resu me (ER) a nd the Program (PG) instructions. A Program operation can be initiated during Erase Suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is being programmed. A Read/Reset command will definitively abort erasure and result in invalid data in the blocks being erased.

Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously exec uted, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles.

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M36W108AT, M36W108AB

Table 9. Flash Instructions

(1)

Mne. Instr. Cyc. 1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc. 7th Cyc.

Read/Reset

(2,4)

Memory Array

(4)

Auto Select 3+

PG Program 4

BE Block Erase 6

(3,6)

Addr.

Data F0h

(3,6)

Addr.

Data AAh 55h F0h

(3,6)

Addr. Data AAh 55h 90h

(3,6)

Addr.

Data AAh 55h A0h

(3,6)

Addr.

Read Memory Array until a new write cycle is initiated.

555h 2AAh 555h

Read Memory Array until a new write cycle is initiated.

555h 2AAh 555h

Read Electronic Signature until a new write cycle is initiated. See Note 5.

555h 2AAh 555h

Program Address

Program

Read Data Polling or Toggle Bit until Program completes.

Data

555h 2AAh 555h 555h 2AAh

Block

Address

Additional

Block

Data AAh 55h 80h AAh 55h 30h 30h

(3,6)

CE Chip Erase 6

Addr.

555h 2AAh 555h 555h 2AAh 555h

Note 8

Data AAh 55h 80h AAh 55h 1 0h

(3,6)

Note: 1. Commands not interpreted in this table will default to read array mode.

Suspend

Erase

Resume

2. A wait of t starting any new operation (see Tabl e 15 and Figure 8).

3. X = Don’t care.

4. The f i rst cycles of the RD or AS instructions are follo wed by read operations. Any number of read cycles can occur after the command cycl e s.

5. Signature Address bits A0, A1, at V code.

6. For C oded cycles address input s A 11-A19 are do n’ t care.

7. Optional, addi tional Bl ocks add resses mus t be ent ered withi n the era se timeo ut delay af ter last write ent ry, timeout statu s can be verified t hrough DQ3 value (see Eras e Timer Bit DQ3 description). When full com m and is e ntered, re al Data Po l ling or To ggle bit until Erase is completed or suspended.

8. Rea d Data Polli ng, Toggle bits or RB

9. Duri ng Erase Suspend, Read and Data Program functions are allow ed in blocks not being erased.

is necessary after a Read/Reset command if the memory was in an Erase, Erase Suspend or Program mode before

PLYH

Erase

(9)

Addr.

Data B0h

(3,6)

Addr.

Data 30h

Read until Toggle stops, then read all the data needed from any Block(s) not being erased then Resume Erase.

Read Data Polling or Toggle Bits until Erase completes or Erase is suspended another time.

will output Manufacturer code (20h). Address bits A0 at VIH and A1, at VIL will output Device

until Erase complete s.

(7)

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M36W108AT, M36W108AB

Table 10. Flash Status Register Bits

DQ Name Logic Level Definition Note

‘1’

Data

Polling

6 Toggle Bit

5 Error Bit

4 Reserved

Erase

Time Bit

2 Toggle Bit

‘0’ Erase On-going

‘-1-0-1-0-1-0-1-’ Erase or Program On-going

DQ Program Complete

‘-1-1-1-1-1-1-1-’

‘1’ Program or Erase Error ‘0’ Program or Erase On-going

‘1’ Erase Timeout Period Expired

‘0’

‘-1-0-1-0-1-0-1-’

‘1’

(1)

Erase Complete or erase block in Erase Suspend

Program Complete or data of non erase block during Erase Suspend

Program On-going

Erase Complete or Erase Suspend on currently addressed block

Erase Timeout Period On-going

Chip Erase, Erase or Erase Suspend on the currently addressed block. Erase Error due to the currently addressed block (when DQ5 = ‘1’)

Program on-going, Erase on-going on another block or Erase Complete

Indicates the P/E.C. status, check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success.

Successive reads output complementary data on DQ6 while Programming or Erase operations are on-going. DQ6 remains at constant level when P/E.C. operations are completed or Erase Suspend is acknowledged.

This bit is set to ‘1’ in the case of Programming or Erase failure.

P/E.C. Erase operation has started. Only possible command entry is Erase Suspend (ES).

An additional block to be erased in parallel can be entered to the P/E.C.

Indicates the erase status and allows to identify the erased block.

1 Reserved 0 Reserved

Note: 1. Logic level ‘1’ is High, ‘0 ’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.

Erase Suspend read on non Erase Suspend block

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