SGS Thomson Microelectronics M28W800BT, M28W800BB Datasheet
FEATURES SUMMARY
■ SUPPLY VOLTAGE
–V
–V
–V
■ ACCE SS TIME: 70, 85, 90,10 0ns
■ PROGRAMMING TIME
= 2.7V to 3.6V Core Power Supply
DD
= 1.65V to 3.6V for Input/Output
DDQ
= 12V for fast Program (optional)
PP
– 10µs typical
– Double Word Programming Option
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– M ain Blocks
■ BLOCK PROTECTION onTWO PARAMETER
BLOCKS
–WP
for Block Protection
■ AUTOMAT IC S TAND-BY M ODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28W800BT: 8892h
– Bottom Device Code, M28W800BB: 8893h
M28W800BT
M28W800BB
8 Mbit (512Kb x16, Boot Block)
3V Supply Flash Memory
Figure 1. Packages
FBGA
TFBGA46 (ZB)
6.39 x 6.37mm
TSOP48 (N)
12 x 20mm
1/42May 2002
M28W800BT, M28W800BB
TABLE OF CONTENTS
SUMMARYDESCRIPTION...........................................................5
Figure2.LogicDiagram ..........................................................5
Table 1. Signal Nam es . . . ........................................................5
Figure 3. TSOP Connections.......................................................6
Figure 4. TFBGA Connections (Top view through package). ..............................7
Figure5.BlockAddresses.........................................................8
SIGNALDESCRIPTIONS............................................................9
AddressInputs(A0-A18)..........................................................9
Data Input/Output (DQ0-DQ15). . . ..................................................9
ChipEnable(E). ................................................................9
Output Enabl e (G). ..............................................................9
Write Enable (W). . ..............................................................9
WriteProtect(WP)...............................................................9
Reset(RP).....................................................................9
Supply Voltage..............................................................9
V
DD
V
Supply Voltage.............................................................9
DDQ
V
ProgramSupplyVoltage ......................................................9
PP
Ground. ...................................................................9
V
SS
BUSOPERATIONS................................................................10
Read.........................................................................10
Write.........................................................................10
OutputDisable.................................................................10
Standby. . ....................................................................10
Automatic Standby. .............................................................10
Reset........................................................................10
Table2.BusOperations.........................................................10
COMMANDINTERFACE ...........................................................11
ReadMemoryArraycommand....................................................11
ReadStatusRegisterCommand...................................................11
Read Electroni c Signature Command ...............................................11
ReadCFIQueryCommand.......................................................11
BlockEraseCommand..........................................................11
ProgramCommand.............................................................11
Double Word Program Command . .................................................12
ClearStatusRegisterCommand...................................................12
Program/Erase Suspend Command ................................................12
Program/EraseResumeCommand ................................................12
BlockProtection................................................................12
Table3.Commands ............................................................13
Table4.ReadElectronicSignature.................................................13
Table5.MemoryBlocksProtectionTruthTable.......................................13
2/42
M28W800BT, M28W800BB
Table6.Program,EraseTimesandProgram/EraseEnduranceCycles ....................14
STATUSREGISTER...............................................................15
Program/EraseControllerStatus(Bit7).............................................15
Erase Suspend Status (Bit 6) .....................................................15
EraseStatus(Bit5).............................................................15
ProgramStatus(Bit4)...........................................................15
V
Status(Bit3)...............................................................15
PP
ProgramSuspendStatus(Bit2)...................................................15
BlockProtectionStatus(Bit1).....................................................16
Reserved(Bit0)................................................................16
Table7.StatusRegisterBits......................................................16
MAXIMUMRATING................................................................17
Table8.AbsoluteMaximumRatings................................................17
DCandACPARAMETERS .........................................................18
Table 9. Operating and AC Measurement Conditions...................................18
Figure6.ACMeasurementI/OWaveform ...........................................18
Figure 7. AC Measurement Load Circuit . . . ..........................................18
Table 10. Device Capac itanc e.....................................................18
Table11.DCCharacteristics......................................................19
Figure8.ReadACWaveforms....................................................20
Table12.ReadACCharacteristics.................................................20
Figure 9. Write AC Waveforms, Write Enable Controlled . . . .............................21
Table 13. Write AC Characteristics, Write Enable Co ntrolled .............................22
Figure10.WriteACWaveforms,ChipEnableControlled................................23
Table14.WriteACCharacteristics,ChipEnableControlled .............................24
Figure11.Power-UpandResetACWaveforms.......................................25
Table15.Power-UpandResetACCharacteristics ....................................25
PACKAGE MECHANICAL . . . .......................................................26
Figure12.TSOP48-48leadPlasticThinSmallOutline,12x20mm,PackageOutline ........26
Table 16. TSOP48 - 48 lead Plas tic Thin Small Outline, 12 x 20mm, Package Mechanical Data . 26
Figure 13. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline27
Table17.TFBGA466.39x6.37mm-8x6ballarray,0.75mmpitch,PackageMechanicalData...27
Figure 14. TFBGA46 Daisy Chain - Package Connections (Top view through package) ........28
Figure 15. TFBGA46 Daisy Chain - PCB Connections proposal (Top view through package ) ....28
PARTNUMBERING ...............................................................29
Table18.OrderingInformationScheme.............................................29
Table19.DaisyChainOrderingScheme............................................29
REVISIONHISTORY...............................................................30
Table20.DocumentRevisionHistory...............................................30
3/42
M28W800BT, M28W800BB
APPENDIX A. BLOCK ADDRES S T ABLES . . ..........................................31
Table 21. Top Boot Block Ad dres se s, M28W800BT ....................................31
Table22.BottomBootBlockAddresses,M28W800BB.................................31
APPENDIXB.COMMONFLASHINTERFACE(CFI) .....................................32
Table23.QueryStructureOverview................................................32
Table 24. CFI Query Identification String . . ..........................................32
Table25.CFIQuerySystemInterfaceInformation.....................................33
Table26.DeviceGeometryDefinition...............................................34
Table 27. Primary Algorithm-Specific Extended Query Table .............................35
Table28.SecurityCodeArea.....................................................35
APPENDIX C. FLOWCHARTS AND PSEUDO CODES....................................36
Figure 16. Program Flowchart and Pseudo Code. . ....................................36
Figure 17. Double Word Program Flowchart and Pseudo Code ...........................37
Figure 18. Program Suspend & Resum e Flowchart and Pseudo Code .....................38
Figure 19. Erase Flowc hart and Pseudo Code ........................................39
Figure 20. Erase S us pend & Resume Flowchart and Pseudo Code. .......................40
APPENDIXD.COMMANDINTERFACEANDPROGRAM/ERASECONTROLLERSTATE.......41
Table29.WriteStateMachineCurrent/Next..........................................41
4/42
SUMMARY DESCRIPTION
The M28W800B isa 8 Mbit (512Kbit x 16) non-volatileFlashmemorythatcanbeerasedelectrically
at the block level and programmed in-system on a
Word-by-Word basis. These operations can be
performed using a single low voltage (2.7 to 3.6V)
supply. V
1.65V. An optional 12V V
allows to drive the I/O pin down t o
DDQ
power supply is pro-
PP
vided to speed up customer programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W800B has an array of 23
blocks: 8 Parameter Blocks of 4 KWord and 15
Main Blocks of 32 KWord. M28W800BT has the
Parameter Blocks at the top of the memory address space while the M28W800BB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 5, Block Addresses.
Parameter blocks 0 and 1 can be protected from
accidental programming or erasure. Each block
can be erased separately. Erase can be suspended in order to perform either read or program in
any other block and then resumed. Program can
be suspended t o read data in any other block and
then resumed. Each block can be program med
and erased over 100,000 cycles.
Program and Erase c omm ands are written to the
Command Interface of the memory. An on-chip
Program/Erase Control ler takes care of the timings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP 48 (10 X 20mm),
and TFBGA46 (6.39 x 6.37mm , 0.75mm pitch)
packages and is supplied with all the bits erased
(set to ’1’).
M28W800BT, M28W800BB
Figure 2. Logic Diagram
V
V
DDQVPP
DD
19
A0-A18
W
E
G
RP
WP
Table 1. Signal Names
A0-A18 Address Inputs
DQ0-DQ15 Data Input/Output
E
G
W
RP
WP
V
DD
M28W800BT
M28W800BB
V
SS
Chip Enable
Output Enable
Write Enable
Reset
Write Protect
Core Power Supply
16
DQ0-DQ15
AI03581
V
DDQ
V
PP
V
SS
NC Not Connected Internally
Power Supply for
Input/Output
Optional Supply Voltage for
Fast Program & Erase
Ground
5/42
M28W800BT, M28W800BB
Figure 3. TSOP Connections
A15
A14
A13
A12
A11
1
48
A16
V
DDQ
V
SS
DQ15
DQ7
A10 DQ14
37
36
DQ6
DQ13
DQ5
DQ12
DQ4
V
DD
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
V
SS
E
A0
NC
NC
RP
V
PP
WP
NC
A18
A17
A9
A8
W
A7
A6
A5
A4
A3
A2
A1
12
M28W800BT
M28W800BB
13
24 25
AI03582
6/42
Figure 4. TFBGA Connections (Top view through package)
M28W800BT, M28W800BB
87654321
A
B
C
D
E
F
A13
DDQ
SS
DQ7V
A8A11
DQ13
PP
RP A18
DQ11
DQ12
DQ4
WP
DQ2
DD
NC
A7V
DQ0DQ9DQ3DQ6DQ15V
DQ1DQ10V
A4
A2A5A17WA10A14
A1A3A6A9A12A15
A0EDQ8DQ5DQ14A16
V
SS
G
AI03805
7/42
M28W800BT, M28W800BB
Figure 5. Block Addresses
M28W800BT
Top Boot Block Addresses
7FFFF
7F000
78FFF
78000
77FFF
70000
0FFFF
08000
07FFF
00000
4 KWords
4 KWords
32 KWords
32 KWords
32 KWords
Total of 8
4 KWord Blocks
Total of 15
32 KWord Blocks
M28W800BB
Bottom Boot Block Addresses
7FFFF
78000
77FFF
70000
0FFFF
08000
07FFF
07000
00FFF
00000
32 KWords
32 KWords
32 KWords
4 KWords
4 KWords
Total of 15
32 KWord Blocks
Total of 8
4 KWord Blocks
AI04384
Note: Also see Appendix A, Tables 21 and 22 for a full listing of the Block Addresses.
8/42
SIGNAL DESCRIPTIONS
See Fig ure 2 Logic Diagram and T able 1,Signal
Names, f or a briefoverview of thesignals connected to this device.
Address Inputs (A0-A18). The Address Inputs
select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at t he s elected address
during aBus Read operation or inputsa command
or data to be programmed during a Write Bus operation.
Chip Enable (E
). The Chip Enable input acti-
vates the memory co ntrol logic, input buffers, decoders andsense amplifiers. When ChipEnable is
and Reset is at VIHthe device is in active
at V
IL
mode. When Chip Enable is at V
the memory is
IH
deselected, the outputs are high impedan ce and
the power consumption is reduced to the stand-by
level.
Output Enable (G
). The Output Ena ble controls
data outputs during the Bus Read operation of the
memory.
WriteEnable(W
). Th e Write Enable controls the
Bus Write operation of the memory’s Command
Interface. Thedata and address inputs are latched
ontherisingedgeofChipEnable,E,orWriteEnable, W
Write Protect (W P
, whichever occurs f irst.
). Write Protect is an input to
protect or unprotect the two lockable parameter
blocks. When Write Protect is at V
, t he lockable
IL
blocks are protected and Program or Erase operations are not possible. When Write Protec t is at
V
, t he lockable blocks are unprotected and can
IH
be programmed or erased (refer to Table 4, Memory Blocks Protection Truth).
Reset (RP
wareresetofthememory.WhenResetisatV
). The Reset input provides a hard-
IL
the memory is in reset mode: the outputs are high
impedance and the current consum pti on is mini-
M28W800BT, M28W800BB
mized. When Reset is at V
mal operation. Exiting reset mode the device
enters read array mode, b ut a negative transition
of Chip Enable or a change of the address is required to ensure v alid data outputs.
Supply Voltage. VDDprovides the power
V
DD
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Eras e).
Supply Voltage. V
V
DDQ
power supply to the I/O pins and enables al l Outputs tobe powered independentlyfrom V
canbetiedtoVDDor can use a s eparate supply.
Program Supply Voltage. VPPis both a
V
PP
control input and a power supply pin. The two
functions are selected by the voltage range applied t o the pin. The Supply V olt age V
Program Supply Voltage V
anyorder.
is kept in a low voltage range (0V to 3.6V)
If V
PP
V
is seen as a control input. In this case a volt-
PP
age lowerthan V
PPLK
against program or erase, while V
ables these functions (see Table 11, DC Charac teristics for the relevant values). V
sampled at the beginning of a program or erase; a
change in its value after the operation has started
does not have any effectand program or eraseoperations continue.
is in the range 11.4V to 12.6V it acts as a
If V
PP
power supply pin. In this cond ition V
stable until the Program/Erase al gorithm is completed (see Table 13 and 14).
V
Ground. VSSis the reference for all voltage
SS
measurements.
Note: Each device in a system should have
V
DD,VDDQ
and VPPdecoupled with a 0.1µF capacitor close to the pin. See Figure 7, AC M easurement Load Circu it. Th e PCB trace widths
,
should be sufficient to carry the required V
Program and Erase currents.
, the device is in nor-
IH
DDQ
PP
provides the
canbeappliedin
gives an absolute protection
PP
DD.VDDQ
and the
DD
>V
PP1
is only
PP
must be
PP
en-
PP
9/42
M28W800BT, M28W800BB
BUS OPERATIONS
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Output Disable, Standby, Aut omatic Standby and Reset. See Table 2, Bus Operations, for a summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignoredby the memory and do
not affect bus operations.
Read. Read B us opera tions are used to output
the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common
Flash Interface. Both Chip Enable and Output E nablemustbeatV
eration. The Chip Enable input sh ould be used to
enable the device. Output Enable should be used
to gat e data onto the output. The data r ead depends on the previous command written to the
memory (see Command Interface section). See
Figure 8, Read Mode AC Waveforms, and Table
12, Read AC Characteristics, for details of when
the output becomes valid.
Read mode is the default state of the device when
exiting Reset or after power-up.
Write. B us Write ope rations write Commands to
the mem ory or latchInput Data tobe programmed.
A write operation is initiated when Chip Enable
and Write Enable are at V
. Commands, Input Data and Addresses are
V
IH
latched on the rising edge of Write Enable or Chip
Enable, whichever occurs first.
in order t o perform a read op-
IL
with Output Enable at
IL
See Figures 9 and 10, Write AC Waveforms, and
Tables 13 and 14, Write AC Characteristics, for
details of the timing requirements.
Output Disable. The data outputs are high impedance when t he Output Enable is at V
.
IH
Standby. Standby disables most of the internal
circuitryallowing a substantialreduction of the c urrent consumption. The memory is in st and-by
when Chip Enable is at V
andthedeviceisin
IH
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently f rom the OutputEnable
or Write Enable inputs. If Chip Enable switches to
V
during a program or erase operation, the de-
IH
vice enters Standby mode when finished.
Automatic Standby. Autom atic Standby pro-
vides a low power consumpt ion state during Read
mode. Following a read operation, the device enters Automatic Standby after 150ns of bus inactivity, even if Chip Enable is low, V
current is reduced to I
. The data Inputs/Out-
DD1
, and the supply
IL
puts will still output data.
Reset. Durin g Res et mode, when Output Enable
is low, V
, the memory is deselected and the out-
IL
puts are high impedance. The memory is in Reset
mode when Reset is at V
. The power cons ump-
IL
tion is reduced to theStan dby level, independently
from the Chip Enable, Output Enable or Write Enable inputs. If Reset is pulled to V
during a Pro-
SS
gram or Eras e, this operation is aborted and the
memory content is no longer valid.
Table 2. Bus Operations
Operation E G W RP WP
Read
Write
Output Disable
Standby
Reset X X X
Note: X = VILor VIH,V
10/42
V
V
V
V
=12V±5%.
PPH
IL
IL
IL
IH
V
IL
V
IH
V
IH
XX
V
IH
V
IL
V
IH
V
IH
V
IH
V
IH
V
IH
V
IL
V
PP
X Don't Care Data Output
V
X
X Don't Care Hi-Z
X Don't Care Hi-Z
X Don't Care Hi-Z
DD
or V
PPH
DQ0-DQ15
Data Input
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Com mands
consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all t imings and verifies the correct execution
of the Program and Erase c ommands. The Program/Erase Cont roll er provides a Status Register
whose output may be read at any time, to monitor
the progress of an operation, or the Program/
Erase states. See Appendix D, Table 29, Write
State Machine Current/Next, for a summa ry o f the
Command Interface.
The Command Interface is res et to Read mode
when power is first applied, when exiting from Reset or whenever V
is lower than V
DD
LKO
.Command sequences must be followed exactly. Any
invalid c ombination ofcommands willreset the device to Read mode. Refer to Table 3, Commands,
in conjunction with the text descriptions below.
Read Memory Array command
TheReadcommandreturnsthememorytoits
Read mode. One Bus Write cycle is required to issue the Read Memory Array command and return
the memory to Read mode. Subsequent read operations will read the addressed location and output the data. When a device Reset oc c urs, the
memory defaults to Read mode.
Read Status Register Co m m and
The Status Register indi cates when a program or
erase operation is complete and the success or
failure of the operation itself. Issue a Read Status
Register comma nd to rea d the Stat us Register’s
contents. Subsequent Bus Read operations read
the S tatus Register, at any addres s, until another
command is issued. See Table 7, Status Register
Bits, for details on the definitions of the bits.
The Read Status Regi ster command may be issued at any time, ev en during a Program /Erase
operation. Any Read atte mpt during a Program/
Erase op eration will automatically output the content of the Stat us Register.
Read Electronic Signature Command
The Read Electronic Signature command reads
the Manufacturer and Device Codes.
The Read Electronic Signat ure command consists
of one write cycle, a subsequent read will output
the Manufacturer or the Device Code dependi ng
on the levelsof A0. The Manufacturer Code is output when th e address line A0 is at V
Code is output when A 0 is at V
A7 must be kept to V
, other addresses are ig-
IL
, the Device
IL
. Addres s es A1-
IH
nored. The cod es are output on DQ0-DQ7 with
DQ8-DQ15 at 00h. (see Table 4)
M28W800BT, M28W800BB
Read CFI Query Command
The Read Query Comm and is used to read data
fromtheCommonFlashInterface(CFI)Memory
Area, allowing programm ing equipment or ap plications to automatically match their interface to
the characteristics of the device.
One Bus Write cycle is required to issue the Read
Query Command. Once the c ommand is issued
subsequent Bus Read operations read from the
Common Flash Interface Memory Area. See Appendix B, Common Flash Interface, Tables 23, 24,
25, 26, 27 and 28 for details on the information
contained in the Common Flash Interface memory
area.
Block Erase Command
TheBlockErasecommandcanbeusedtoerase
a block. It setsall the bits within the selected block
to ’1’. All previous data in the block is lost. If the
block is protected then the Erase operation w ill
abort, the data inthe block willnot be changed and
the Status Register will output the error.
Two Bus Write cycles are required to issue the
command.
■ The first bus cycle sets up the Erase command.
■ Th e s ec ond latches the block address in the
internal state machine and starts the P ro gram/
Erase Controller.
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
Erase aborts if Reset turns to V
cannot beguaranteed when theErase operation is
aborted, the block must be erased again.
During Erase operations the memory will only accept the Read S tatus Register command and the
Program/Erase Suspend command, allother commands will be ignored. Typical Erase times are
given in Table 6, Program, E ras e Times and Program/Erase Endurance Cycles.
See Appendix C, Figure 19, Erase Flowchart and
Pseudo Code, for the flowchartfor using theErase
command.
Program Command
The memory array can be programmed word-byword. Two bus write cycles are required to issue
the Program command.
■ Th e first bus cycle s ets up the Program
command.
■ Th e secondlatches theAddress andthe Datato
be written and star ts the Program/Erase
Controller.
During Program operations the memory will only
accept the Read Status Register command and
the Program/Erase Suspe nd c ommand. All other
. As dat a integ rity
IL
11/42
M28W800BT, M28W800BB
commands will be ignored. Typical Program times
are given in Table 6, Progra m, E ras e Times and
Program/Erase Endurance Cy c les.
Programming aborts if Reset goes to V
. As data
IL
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and reprogrammed.
See Appendix C, Figure 16 , Program Flowchart
and Pseudo Code, for the flowchart for using the
Program comman d.
Double Word Program Command
Thisfeat ure isoffered toimprove the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempted when V
PP
executed if V
isnot atV
is below V
PP
. The c ommand can be
PPH
but the result is not
PPH
guaranteed.
Three bus write cycles are neces sary to issue the
Double Word Program c ommand.
■ Th e f irst bus cycle sets up the Double Word
Program comm and.
■ The second bus cycle latches the Address and
theDataofthefirstwordtobewritten.
■ The third bus cyclelatches the Address and the
Data of the second word to bewritten and st arts
the Program/Erase Controlle r.
Read operations out put the Status Register content after the programming has started. Programming aborts if Reset goes to V
. As data integrity
IL
cannot be guaranteed when the program operation is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 17, Double Word Program Flowchart and Pseudo Code, for the flowchart for using the Double Word Program
command.
Clear Status Register Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 i n the Status R egister to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
The bits in the Status Register do not automatically return t o ‘0’ when a new Program or Erase command is issued. Th e error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Pr ogram or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase cont roller.
During Program/Erase Suspend theCommand Interface will accept the Program/Erase Resume,
Read A rray , Read StatusRegister, Read E lectronic Signature and Read CFI Query commands. Additionally, if the suspend operation was Erase then
the Program command will also be accepted. Only
the blocks not being erased may be read or programmed correctly.
During a Program/Erase Su sp end, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to V
Reset turns to V
. P rogram/Erase is abort ed if
IH
.
IL
See Appendix C, Figure 18, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
20, Erase Suspend & Res ume Flowchart and
Pseudo Codefor flowchartsfor usingthe Program/
Erase Suspend c ommand.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Eras e Controller after
a Program/Erase Suspend operation has paused
it. One Bus W rite cycle is required to issue the
command. Once the command is issued subsequent Bus Read operations read the Status Register.
See A ppendix C, Figure 18, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 20, Erase Suspend &
Resume Flowchart and Pseudo Code for flowcharts for using the Program/Erase Resume command.
Block Protection
Two parameter/lockable blocks (blocks #0 and #1)
can be protected against Program or E ras e operations. Unprotected blocks can be program med or
erased.
To protect t he two lockable blocks set Write Protect to V
. WhenVPPis below V
IL
allblocks are
PPLK
protected. Any attempt to Program or Erase protected blocks will abort, the data in the block will
not be changed and the Status Regis ter outputs
the error.
Table 5, Memory Blocks Protection Truth Table,
defines the protection methods.
12/42
Table 3. Commands
M28W800BT, M28W800BB
Bus Write Operations
(3)
No. of
Cycles
3 Write X 30h Write Addr 1
Commands
Read Memory Array 1+ Write X FFh
Read Status Register 1+ Write X 70h Read X
Read Electronic Signature 1+ Write X 90h
Read CFI Query 1+ Write X 98h
Erase 2 Write X 20h Write
Program 2 Write X
Double Word Program
Clear StatusRegister 1 Write X 50h
Program/Erase Suspend 1 Write X B 0h
Program/Erase Resume 1 Write X D0h
Note: 1. X = Don't Care.
2. A0=V
3. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
outputs Manufacturercode,A0=VIHoutputs Device code. Address A7-A1 must be VIL.
IL
1st Cycle 2nd Cycle 3nd Cycle
Bus
Op.
Addr Data
40h or
10h
Bus
Op.
Read
Read
Read
Write Addr
Addr Data
Signature
Addr
CFI Addr Query
Block
Read
Addr
Addr
(2)
Data
Status
Register
Signature
D0h
Data
Input
Data
Input
Bus
Op.
Write Addr 2
Addr Data
Data
Input
Table 4. Read Electronic Signature
Code Device E G W A0 A1-A7 A8-A18 DQ0-DQ7 DQ8-DQ15
Manufact. Code
Device Code
Note: RP =VIH.
M28W800BT
M28W800BB
V
V
V
V
IL
V
IL
V
IL
V
IL
V
IL
V
IL
V
IH
V
IH
V
IH
V
IL
IH
IH
Don't Care 20h 00h
IL
V
Don't Care 92h 88h
IL
V
Don't Care 93h 88h
IL
Table 5. Memo ry Blocks Protection T ruth Table
(1)
V
PP
X
V
IL
or V
V
DD
or V
V
DD
Note: 1. X = Don't Care
2. V
(2)
PPH
(2)
PPH
must also be greater than the Program Voltage Lock Out V
PP
RP WP
V
IL
V
IH
V
IH
V
IH
(1)
X Protected Protected
X Protected Protected
V
IL
V
IH
Lockable Blocks
(blocks #0 and #1)
Other Blocks
Protected Unprotected
Unprotected Unprotected
.
PPLK
13/42
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