SGS Thomson Microelectronics M28LV64 Datasheet

64K (8K x 8) LOW VOLTAGE PARALLEL EEPROM

with SOFTWARE DATA PROTECTION

FASTACCESSTIME: 200ns
SINGLELOW VOLTAGEOPERATION
LOW POWER CONSUMPTION
FASTWRITE CYCLE:
– 64 BytesPage Write Operation
– Byte or Page Write Cycle: 3ms Max
ENHANCED END OF WRITE DETECTION:
– Ready/BusyOpenDrain Output

(only on theM28LV64)
– Data Polling
–ToggleBit
PAGE LOAD TIMER STATUS BIT
HIGHRELIABILITYSINGLE POLYSILICON,

CMOSTECHNOLOGY:
– Endurance>100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDECAPPROVEDBYTEWIDEPIN OUT
SOFTWARE DATAPROTECTION

TheM28LV64 is replacedby the
M28C64-xxW

28

1

PDIP28 (P) PLCC32 (K)

28

1

SO28 (MS)

300 mils

Figure 1. Logic Diagram

M28LV64

NOT FOR NEW DESIGN

TSOP28 (N)

8x13.4mm

DESCRIPTION

The M28LV64 is an 8K x 8 low power Parallel
EEPROM fabricated with SGS-THOMSON pro-

V

CC

prietary single polysilicon CMOS technology.The
device offersfast accesstime with low power dis­sipationand requiresa 2.7Vto 3.6Vpower supply.

A0-A12

Table 1. Signal Names

A0 - A12 Address Input
DQ0 - DQ7 Data Input / Output
W Write Enable
E Chip Enable
G Output Enable
RB Ready / Busy
V

CC

V

SS

May 1997 1/18

This isinformation on a product still in production but not recommended for new designs.

Supply Voltage
Ground

Note: * RB function is only available on the M28LV64.

W

13

M28LV64

E

G

V

SS

8

DQ0-DQ7

RB *

AI01538B

M28LV64

Figure2A. DIPPin Connections

RB V

1

A12

2

A7

3

A6

4

A5

5

A4

6

A3

7
8
9
10
11

M28LV64

A2
A1
A0

DQ0

12

DQ2

13
14

SS

Warning: NC =Not Connected.

28
27
26
25
24
23
22
21
20
19
18
17
16
15

AI01539B

CC

W
NC
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5DQ1
DQ4
DQ3V

Figure2B. LCC Pin Connections

CC

NC

DU

32

W

V

A8
A9
A11
NC
G

25

A10
E
DQ7
DQ6

DQ4

DQ5

AI01540B

RB

A7

A12

1

A6
A5
A4
A3
A2

9

M28LV64
A1
A0

NC

DQ0

17

SS

V

DQ1

DQ2DUDQ3

Warning: NC = Not Connected, DU = Don’t Use.

Figure2C. SO Pin Connections

RB

A12

DQ0
DQ1
DQ2

V

SS

Warning: NC =Not Connected.

A7
A6
A5
A4
A3
A2
A1
A0

1
2
3
4
5
6
7

M28LV64

8
9
10
11
12
13
14

28
27
26
25
24
23 A11
22
21
20
19
18
17
16
15

AI01541B

V

CC

W
NC
A8
A9

G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3

Figure2D. TSOPPin Connections

G

22

A11

A9
A8

NC

W

V

CC

RB

28
1

M28LV64

A12

A7
A6
A5
A4
A3

78

Warning: NC = Not Connected.

21

15
14

AI01542B

A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
V

SS

DQ2
DQ1
DQ0
A0
A1
A2

2/18

M28LV64

Table 2. Absolute Maximum Ratings

(1)

Symbol Parameter Value Unit

T

A

T

STG

V

CC

V

IO

V

V

ESD

Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

2. 100pF through1500Ω; MIL-STD-883C, 3015.7

Ambient Operating Temperature – 40 to 85 °C
Storage Temperature Range – 65 to 150 °C
Supply Voltage –0.3 to 6.5 V
Input/Output Voltage – 0.3 to VCC+0.6 V
Input Voltage –0.3 to 6.5 V

I

Electrostatic Discharge Voltage (Human Bodymodel)

cause permanent damage to the device. These are stress ratings only and operation ofthe deviceat these or any otherconditions
above thoseindicated in the Operating sections of this specification isnot implied. Exposure to Absolute Maximum Rating
conditions for extended periods mayaffect device reliability. Refer also to theSGS-THOMSON SURE Program and other
relevant quality documents.

(2)

4000 V

Figure3. Block Diagram

RB E G W

A6-A12

(Page Address)

A0-A5

VPPGEN RESET

ADDRESS

LATCH

ADDRESS

LATCH

Y DECODE

X DECODE

CONTROL LOGIC

64K ARRAY

SENSE ANDDATA LATCH

I/O BUFFERS

DQ0-DQ7

PAGE

LOAD
TIMER STATUS
TOGGLE BIT
DATA POLLING

AI01355

3/18

M28LV64

Table 3. Operating Modes

Mode E G W DQ0 - DQ7

Standby 1 X X Hi-Z
Output Disable X 1 X Hi-Z
Write Disable X X 1 Hi-Z
Read 0 0 1 Data Out
Write 0 1 0 Data In

Note: 1. 0 = VIL;1=VIH;X=VILor VIH.

DESCRIPTION (cont’d)

The M28LV64 outputs the Ready/Busy write
status,theM28LV64-aaaX(aaa=access time)has
no Ready/Busy status and the relevant RB pin is
Not Connected (NC). The circuit has been de­signed to offer a flexible microcontroller interface
featuring both hardware and software handshak­ing with Ready/Busy,Data Polling and ToggleBit.
The M28LV64supports 64byte page writeopera­tion. A Software Data Protection (SDP) is also
possibleusing the standard JEDECalgorithm.

(1)

OPERATION

In order topreventdata corruptionandinadvertent
writeoperationsan internalV
Write operation if V

is below VWI(see Table 6).

CC

comparatorinhibits

CC

Accesstothememory inwritemodeisallowedafter
a power-upas specifiedin Table6.

Read

TheM28LV64isaccessedlikea staticRAM. When
E and G are low with W high, the data addressed
ispresented on the I/O pins. The I/Opins are high
impedancewhen eitherG or E is high.

Write

PINDESCRIPTION
Addresses (A0-A12). The address inputs select

an 8-bit memory location during a read or write
operation.

Chip Enable (E). The chip enable input must be
lowto enableallread/writeoperations.When Chip
Enableis high, power consumptionis reduced.

OutputEnable (G). TheOutput Enableinput con­trols the data output buffers and is used to initiate
readoperations.

DataIn/Out (DQ0 - DQ7).Data iswritten toorread
fromthe M28LV64 throughthe I/O pins.

WriteEnable(W).The WriteEnableinputcontrols
the writing of data to the M28LV64.

Ready/Busy (RB). Ready/Busy is an open drain
output that can be used to detect the end of the
internalwritecycle(thisfunctionappliesonly tothe
M28LV64).

Write operationsare initiated when both W and E
are low andG is high.TheM28LV64supports both
E and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurslast andthe Dataon the rising edge of E or
W which ever occurs first. Once initiated the write
operationis internallytimed untilcompletion.

Page Write

Page write allows up to 64 bytes to be consecu­tively latched into the memory prior to initiating a
programmingcycle. Allbytes must be located in a
single page address, that is A6-A12 must be the
samefor all bytes. Thepage writecan beinitiated
duringany byte writeoperation.

Following the first byte write instruction the host
may send another address and data with a mini­mum data transfer rate of t

(see Figure 13).

WHWH

If atransitionofEor Wisnotdetectedwithin t
the internal programmingcycle will start.

WHWH

4/18

M28LV64

Microcontroller ControlInterface

The M28LV64provides two write operation status
bitsandonestatuspinthatcanbeusedto minimize
the system write cycle. Thesesignals are available
on the I/O port bits DQ7 or DQ6 of the memory
duringprogrammingcycleonly,oras theRBsignal
on a separatepin.

Figure4. Status Bit Assignment

DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0

DP TB PLTS Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z

DP =Data Polling
TB = ToggleBit
PLTS = Page Load Timer Status

Data Polling bit (DQ7). During the internal write
cycle,any attempt to read the last bytewritten will
produce on DQ7 the complementary value of the
previouslylatched bit. Once the write cycle is fin­ished the true logic value appears on DQ7 in the
readcycle.

Toggle bit (DQ6). The M28LV64 offers another
way for determiningwhen the internal write cycle
iscompleted.DuringtheinternalErase/Writecycle,
DQ6 will toggle from ”0” to ”1” and ”1” to ”0” (the
first read value is ”0”) on subsequent attempts to
read the memory. When the internalcycle is com­pleted the togglingwill stopand the devicewill be
accessiblefor a new Read or Writeoperation.

Page Load Timer Status bit (DQ5). In the Page
Write mode data may be latched by E or W up to
100µs after theprevious byte. Upto 64bytes may
be input. The Data output (DQ5) indicates the
status of the internal Page Load Timer. DQ5 may

be read by asserting Output Enable Low (t

PLTS

DQ5 Low indicates the timer is running,High indi­cates time-out after which the write cyclewill start
and no new data may be input.

Ready/Busy p in (avail able only on the
M28LV64).TheRB pinprovidesa signalat itsopen

drain output which is low during the erase/write
cycle,butwhichis releasedatthecompletionof the
programmingcycle.

SoftwareData Protection

The M28LV64 offers a software controlled write
protection facility that allows the user to inhibit all
write modesto thedevice includingthe ChipErase
instruction. This can be useful in protecting the
memory from inadvertent write cycles that may
occurdue touncontrolled bus conditions.

The M28LV64isshippedasstandardinthe”unpro­tected” state meaning that the memory contents
can be changed as requiredby the user.After the
Software Data Protection enable algorithm is is­sued, the device enters the ”Protect Mode” of
operation where no further write commands have
any effect on the memory contents. The device
remains in this mode until a valid Software Data
Protection (SDP) disable sequence is received
whereby the device reverts to its ”unprotected”
state. The Software Data Protection is fully non­volatile and is not changed by power on/off se­quences.

Toenable the SoftwareData Protection(SDP) the
devicerequirestheusertowrite(withaPageWrite)
three specificdata bytes to three specificmemory
locations as per Figure 5. Similarly to disable the
Software Data Protection the user has to write
specificdata bytesintosixdifferentlocationsasper
Figure 6 (with a Page Write). This complexseries
ensures that the user will never enable or disable
the SoftwareData Protectionaccidentally.

).

5/18

M28LV64

Figure5. Software DataProtection EnableAlgorithmand MemoryWrite

WRITE AAh in

Address 1555h

Page
Write

Instruction

(Note 1)

Note: 1.MSB Address bits (A6 to A12) differduringthese specific PageWrite operations.

WRITE 55h in

Address 0AAAh

WRITE A0h in

Address 1555h

SDP is set

SDP ENABLEALGORITHM

Page
Write

Instruction

(Note 1)

Figure6. Software DataProtection Disable Algorithm

WRITE AAh in

Address 1555h

WRITE 55h in

Address 0AAAh

WRITE A0h in

Address 1555h

Write

(1 up to 64 bytes)

WRITE IN

WHEN SDP IS SET

Page

MEMORY

AI01356B

WRITE
is enabled

Page
Write

Instruction

WRITE AAh in

Address 1555h

WRITE 55hin

Address 0AAAh

WRITE 80hin

Address 1555h

WRITE AAh in

Address 1555h

WRITE 55hin

Address 0AAAh

WRITE 20hin

Address 1555h

Unprotected State

AI01357

6/18