SGS Thomson Microelectronics M28F101-120N1, M28F101-100P1, M28F101-150P6, M28F101-150P1, M28F101-150K1 Datasheet

1 Mb (128K x 8, Chip Erase) FLASH MEMORY

5V ±10% SUPPLY VOLTAGE
12V PROGRAMMINGVOLTAGE
FASTACCESSTIME: 70ns
BYTEPROGRAMINGTIME: 10µs typical
ELECTRICALCHIP ERASE in 1s RANGE
LOW POWERCONSUMPTION
– Stand-byCurrent: 100µAmax
10,000ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-STOP

TIMER
OTPCOMPATIBLE PACKAGESand PINOUTS
ELECTRONIC SIGNATURE
– ManufacturerCode: 20h
– DeviceCode: 07h

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or­ganisedas128K bytesof8 bits.It usesacommand
registerarchitectureto select the operating modes
and thus provides a simple microprocessor inter­face.The M28F101 FLASHMemory is suitablefor
applications where the memory has to be repro­grammed in the equipment. The access time of
70ns makes the device suitable for use in high
speedmicroprocessor systems.

32

1

PDIP32 (P)

TSOP32 (N)

8 x 20 mm

Figure 1. Logic Diagram

V

CC

17

A0-A16

M28F101

PLCC32 (K)

V

PP

8

DQ0-DQ7

Table 1. Signal Names

A0-A16 Address Inputs
DQ0-DQ7 Data Inputs / Outputs
E Chip Enable
G Output Enable
W Write Enable
V

PP

V

CC

V

SS

April 1997 1/23

Program Supply
SupplyVoltage
Ground

W

M28F101

E

G

V

SS

AI00666B

M28F101

Figure2A. DIP Pin Connections

V

1

PP

2

A15

3

A12

4

A7

5

A6

6

A5

7

A4

8
9
10
11
12
13

M28F101

A3
A2
A1
A0

DQ0

14

DQ2

15
16

SS

Warning: NC = Not Connected. Warning: NC = Not Connected.

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

AI00667

V

CC

WA16
NC
A14
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5DQ1
DQ4
DQ3V

Figure2B. LCC Pin Connections

A16

A7
A6
A5
A4
A3
A2
A1
A0

DQ0

A12

9

DQ1

VPPV

A15

1

M28F101

17

SS

V

DQ2

DQ3

32

CC

DQ4

W

DQ5

NC

25

DQ6

A14
A13
A8
A9
A11
G
A10
E
DQ7

AI00668

Figure2C. TSOP Pin Connections

A11 G

A9

A8
A13
A14

NC

V

CC

V

PP

A16
A15
A12

A7

A6

A5

A4 A3

Warning: NC = Not Connected.

1

W

8
9

16 17

M28F101

(Normal)

32

25
24

AI00669B

A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
V

SS

DQ2
DQ1
DQ0
A0
A1
A2

Figure2D. TSOP Reverse Pin Connections

1

A10

E
DQ7
DQ6
DQ5
DQ4
DQ3
V

SS

8
9

M28F101

(Reverse)

DQ2
DQ1
DQ0

A0
A1
A2

16 17

Warning: NC = Not Connected.

AI00670C

32

25
24

A11G
A9
A8
A13
A14
NC
W
V

CC

V

PP

A16
A15
A12
A7
A6
A5
A4A3

2/23

Table 2. AbsoluteMaximumRatings

Symbol Parameter Value Unit

M28F101

T

A

T

STG

V

IO

V

CC

V

A9

V

PP

Note: Except for therating ”Operating Temperature Range”, stressesabove those listed in the Table”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation ofthe device at these or any otherconditions above
those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.

DEVICE OPERATION

The M28F101FLASHMemoryemploys a technol­ogysimilar to a 1 MegabitEPROMbut adds to the
devicefunctionalityby providingelectrical erasure
and programming. These functions are managed
by a command register. The functions that are
addressed via the command register depend on
the voltage applied to the V
input. When V
commandregisteris disabled and M28F101func­tions as a read only memory providing operating
modes similar to an EPROM (Read, Output Dis­able, Electronic Signature Read and Standby).
When V

is raised to 12V the command regsiter

PP

isenabledand this provides,inaddition,Eraseand
Programoperations.

Ambient Operating Temperature –40 to 125 °C
Storage Temperature –65 to150 °C
Input or Output Voltages –0.6 to 7 V
Supply Voltage –0.6 to 7 V
A9 Voltage –0.6 to 13.5 V
Program Supply Voltage, during Erase

or Programming

–0.6 to 14 V

Output Disable Mode. When the Output Enable
(G) is High the outputs are in a high impedance
state.

ElectronicSignatureMode.Thismodeallowsthe
read outof two binarycodesfrom thedevice which
identify the manufacturer and device type. This
mode is intended for use by programming equip-

, program voltage,

is less than or equal to 6.5V,the

PP

PP

mentto automaticallyselect the correct erase and
programmingalgorithms.TheElectronicSignature
Modeis activewhen a high voltage (11.5Vto 13V)
isappliedto addresslineA9with EandG Low.With
A0 Low the output data is the manufacturercode,
whenA0 isHigh the outputis the devicetype code.
All other address lines should be maintained Low
while reading the codes. The electronicsignature
may also be accessedin Read/Write modes.

READONLYMODES, V

PP

≤ 6.5V

For all Read Only Modes, except Standby Mode,
the Write Enable input W should be High. In the
StandbyMode this input is don’t care.

ReadMode. TheM28F101has two enable inputs,
E and G, both of which must be Low in order to
output data from the memory. TheChipEnable (E)
is the powercontrol and shouldbe used for device
selection. Output Enable (G) is the output control
and should be used to gate data on to the output,
independantof the deviceselection.

Standby Mode. In the Standby Mode the maxi­mum supply current is reduced. The device is
placedin the StandbyMode by applyinga High to
the Chip Enable (E) input. When in the Standby
Mode the outputs are in a high impedance state,
independantof the OutputEnable (G) input.

READ/WRITEMODES, 11.4V ≤ V

When V

is High both read and write operations

PP

≤ 12.6V

PP

may be performed. These are defined by the con­tents of an internal commandregister.Commands
may be written to this register to set-up and exe­cute,Erase,EraseVerify,Program,ProgramVerify
and Reset modes. Each of these modes needs 2
cycles. Eah mode starts with a write operation to
set-upthe command,this is followedbyeither read
or write operations. The device expects the first
cycle to be a writeoperation and does not corrupt
data at any location in the memory.Read mode is
set-upwith one cycleonly and may be followed by
any number of read operations to output data.
ElectronicSignatureRead modeis set-up with one
cycle and followed by a read cycle to output the
manufactureror devicecodes.

3/23

M28F101

Table 3. Operations

ReadOnly V

(1)

V

PP

PPL

Operation E G W A9 DQ0 - DQ7

Output Disable V

Electronic Signature V

(2)

Read/Write

V

PPH

Output Disable V

Notes: 1. X = VILor VIH.

2. Refer also tothe Command table.

Table4. Electronic Signature

Identifier A0 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 Hex Data

Manufacturer’s Code V
Device Code V

IL

IH

Read V

Standby V

Read V
Write V

Standby V

IL

IL

IH

IL

IL

IL

IL

IH

V

IL

V

IH

V

IH

V

IH

A9 Data Output

X Hi-Z

X X X Hi-Z

V

IL

V

IL

V

IH

V

IH

V

IH

V

IH

V

ID

Codes

A9 Data Output

VILPulse A9 Data Input

V

IH

X Hi-Z

X X X Hi-Z

00100000 20h
00000111 07h

Table 5. Commands

Command Cycles

(1)

1st Cycle 2nd Cycle

Operation A0-A16 DQ0-DQ7 Operation A0-A16 DQ0-DQ7

Read 1 Write X 00h
Electronic

Signature

(2)

Setup Erase/

2 Write X 90h

2

Write X 20h

Read 00000h 20h
Read 00001h 07h

Erase Write X 20h
Erase Verify 2 Write A0-A16 A0h Read X Data Output
Setup Program/

2

Write X 40h
Program Write A0-A16 Data Input
Program Verify 2 Write X C0h Read X Data Output
Reset 2 Write X FFh Write X FFh

Notes: 1. X= VILor VIH.

2. Refer also to the Electronic Signature table.

4/23

Table6. AC MeasurementConditions

SRAM Interface Levels EPROM Interface Levels

Input Rise and Fall Times ≤ 10ns ≤ 10ns
Input Pulse Voltages 0 to 3V 0.45V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V

M28F101

Figure 3. AC TestingInput Output Waveform

SRAM Interface

3V

1.5V

0V

EPROM Interface

2.4V

0.45V

Table 7. Capacitance

Symbol Parameter Test Condition Min Max Unit

C

IN

C

OUT

Note: 1. Sampled only, not 100% test.ed

Input Capacitance VIN=0V 6 pF
Output Capacitance V

(1)

(TA=25°C, f = 1 MHz )

2.0V

0.8V

AI01275

Figure 4. ACTesting Load Circuit

1.3V

1N914

3.3kΩ

DEVICE
UNDER

TEST

CL= 30pF or 100pF

CL= 30pF for SRAM Interface
CL= 100pF for EPROM Interface
CLincludes JIG capacitance

=0V 12 pF

OUT

OUT

AI01276

READ/WRITE MODES (cont’d)
Awritetothecommandregisterismadebybringing

WLowwhileEisLow.ThefallingedgeofW latches
Addresses, while the rising edge latches Data,
which are used for those commands that require
address inputs, command input or provide data
output.

The supply voltage V

canbe applied in any order. When the device

V

PP

is powered up or when V

and the program voltage

CC

is ≤ 6.5V the contents

PP

of the command register defaults to 00h, thus
automaticallysetting-up Read operations. In addi­tion a specific command may be used to set the
commandregister to 00h for reading the memory.

Thesystem designer may chose to provide a con­stanthigh V
all operations,or toswitchthe V

and use the register commands for

PP

fromlow to high

PP

only when needing to eraseor program the mem­ory. Allcommandregisteraccess isinhibited when

falls below the Erase/Write Lockout Voltage

V

CC

) of 2.5V.

(V

LKO

If the device is deselected during Erasure, Pro­grammingor Verification it will draw active supply
currentsuntil the operations are terminated.

The device is protected against stress caused by
long erase or program times. If the end of Erase or
Programming operations are not terminated by a
Verifycycle within a maximum time permitted, an
internal stop timer automatically stops the opera­tion.The deviceremainsin an inactivestate, ready
to start a Verifyor ResetMode operation.

5/23

M28F101

Table8. DC Characteristics

= 0 to 70°C, –40to 85 °C or–40 to 125 °C;VCC=5V±10%)

(T

A

Symbol Parameter TestCondition Min Max Unit

I

I

LO

I

CC

I

CC1

I

CC2

I

CC3

I

CC4

I

CC5

I

LPP

I

PP

I

PP1

I

PP2

I

PP3

I

PP4

V

V

V

V

OH

V

PPL

V

PPH

V

I

ID

V

LKO

Note: 1. Not 100% tested.Characterisation Data available.

Input Leakage Current 0V ≤ VIN≤ V

LI

Output Leakage Current 0V ≤ V

OUT

≤ V

CC

CC

Supply Current (Read) E = VIL, f = 6MHz 30 mA
Supply Current (Standby) TTL E = V
Supply Current (Standby) CMOS E = V

(1)

Supply Current (Programming) DuringProgramming 10 mA

(1)

Supply Current (Program Verify) During Verify 15 mA

(1)

Supply Current (Erase) During Erasure 15 mA

(1)

Supply Current (Erase Verify) During Erase Verify 15 mA
Program Leakage Current VPP≤ V

Program Current (Read or
Standby)

(1)

Program Current (Programming) VPP=V

(1)

Program Current (Program
Verify)

(1)

Program Current (Erase) VPP=V

(1)

Program Current (Erase Verify) VPP=V
Input Low Voltage –0.5 0.8 V

IL

Input High VoltageTTL 2 VCC+ 0.5 V

IH

PPH

V

PP=VPPH

PPH

Input High Voltage CMOS 0.7 V

= 5.8mA (grade 1) 0.45 V

I

Output Low Voltage

OL

Output High Voltage CMOS

Output High Voltage TTL I

OL

I

= 2.1mA (grade 6) 0.45 V

OL

I

OH

I

OH

OH

Program Voltage (Read
Operations)

Program Voltage (Read/Write
Operations)

A9 Voltage (Electronic Signature) 11.5 13 V

ID

(1)

A9 Current (Electronic Signature) A9 = V
Supply Voltage, Erase/Program

Lock-out

IH

± 0.2V 50 µA

CC

CC

V

PP>VCC

V

≤ V

PP

CC

, During Programming 30 mA

, During Verify 5 mA

, During Erase 30 mA

PPH

, During Erase Verify 5 mA

CC

= –100µA 4.1 V
= –2.5mA 0.85 V

CC

= –2.5mA 2.4 V

0 6.5 V

11.4 12.6 V

ID

2.5 V

±1 µA

±10 µA

1mA

±10 µA
120 µA
±10 µA

VCC+ 0.5 V

200 µA

V

6/23

Table 9A. Read Only Mode AC Characteristics

= 0 to70 °C, –40 to 85 °C or –40 to125 °C; 0V ≤ VPP≤ 6.5V)

(T

A

Symbol Alt Parameter TestCondition

t

WHGL

t

AVAV

t

AVQV

(1)

t

ELQX

t

ELQV

(1)

t

GLQX

t

GLQV

(1)

t

EHQZ

(1)

t

GHQZ

t

AXQX

Note: 1. Sampled only, not 100% tested

Write Enable High to
Output Enable Low

t

Read Cycle Time E = VIL,G=VIL70 90 100 ns

RC

Address Validto

t

ACC

Output Valid
Chip Enable Low to

t

LZ

Output Transition
Chip Enable Low to

t

CE

Output Valid
Output Enable Low to

t

OLZ

Output Transition
Output Enable Low to

t

OE

Output Valid
Chip Enable High to

Output Hi-Z
Output Enable High to

t

DF

Output Hi-Z
Address Transitionto

t

OH

Output Transition

E=V

G=V

G=V

G=V

E=V

,G=V

IL

E=V

E=V

E=V

,G=V

IL

IL

IL

IL

IL

IL

IL

IL

IL

M28F101

M28F101

-70 -90 -100

=5V±5% VCC=5V±10% VCC=5V±10%

V

CC

SRAM

Interface

EPROM

Interface

EPROM

Interface

Min Max Min Max Min Max

666µs

70 90 100 ns

000ns

70 90 100 ns

000ns

40 40 45 ns

0 30 0 45 0 45 ns

0 30 0 30 0 30 ns

000ns

Unit

Read Mode. The Read Mode is the default at

power up or may be set-up by writing 00h to the
command register. Subsequent read operations
outputdatafromthememory.Thememoryremains
in the Read Mode until a new commandis written
to the command register.

ElectronicSignatureMode. In order to select the
correct erase and programming algorithms for on­board programming, the manufacturerand device

codesmay beread directly. It isnot neccessaryto
apply a high voltage to A9 when using the com­mand register. The Electronic Signature Mode is
set-upby writing 90htothe commandregister.The
following read cycles,with address inputs00000h
or 00001h, output the manufactureror devicetype
codes.The command is terminated by writingan­othervalid command to the commandregister(for
exampleReset).

7/23