SGS Thomson Microelectronics M27C800 Datasheet

M27C800

8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM

■ 5V ± 10% SUPPLY VOLTAGE in READ

OPERATION

■ ACCESS TIME: 50ns

■ BYTE-WIDE or WORD-WIDE

CONFIGURABLE

■ 8 Mbit MASK ROM REPLACEMENT

■ LOW POWER CONSUMPTION

– Active Current 70mA at 8MHz – Stand-by Current 50µA

■ PROGRAMMING VOLTAGE: 12.5V ± 0.25V

■ PROGRAMMING TIME: 50µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h – Device Code: B2h

42

1

FDIP42W (F) PDIP42 (B)

42

1

44

1

SO44 (M)PLCC44 (K)

DESCRIPTION

The M27C800 is an 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiringlargedataorprogram storage. It is organised as either 1 Mwords of 8 bit or 512 Kwords of 16 bit. The pin-out is compatible with the most common 8 Mbit Mask ROM.

The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet lightto erase the bit pattern.

A new patterncanthenbewrittenrapidlytothedevice by following the programming procedure.

For applications where the contentis programmed only one time and erasure is not required, the M27C800 is offered in PDIP42, PLCC44 and SO44 packages.

Figure 1. Logic Diagram

V

CC

19

A0-A18

BYTEV

E

G

PP

M27C800

V

SS

Q15A–1

15

Q0-Q14

AI01593

1/17January 2000

M27C800

Figure 2A. DIP Connections

1

A18 NC

2 3

A7 A6

4

A5

5 6

A4

7

A3

8

A2

9

A1

10

A0

V

SS

Q0 Q8 Q1 Q9

Q10

Q3

Q11

M27C800

11

E

12 13

G

14 15 16 17 18 19 20 21

42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22

AI01594

A8A17 A9 A10 A11 A12 A13 A14 A15 A16 BYTEV V

SS

Q15A–1 Q7 Q14 Q6 Q13 Q5Q2 Q12 Q4 V

CC

PP

Figure 2B. LCC Connections

SS

A18

A5

A6

A4 A3 A2 A1 A15 A0

E

12

V

SS

Q0 Q8 Q1

Q9

Q2

Q10

V

1

M27C800

23

Q3

NC

Q11

44

V

CC

A17A8NC

A7

Q4

A9

Q12

A10

Q5

A11

34

Q13

A12 A13 A14

A16 BYTEV V

SS

Q15A–1G Q7 Q14 Q6

AI02042

PP

Figure 2C. SO Connections

1

NC NC

2

A17 A8

V

Q10

Q11

A7 A6 A5 A4 A3 A2 A1 A0

SS

Q0 Q8

Q9

Q3

3 4 5 6 7 8 9 10 11

M27C800

12

E

13 14

G

15 16 17Q1 18 19 20 21

44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 2322

AI01595

NCA18

A9 A10 A11 A12 A13 A14 A15 A16 BYTEV V

SS

Q15A–1 Q7 Q14 Q6 Q13 Q5Q2 Q12 Q4 V

CC

PP

Table 1. Signal Names

A0-A18 Address Inputs

Q0-Q7 Data Outputs

Q8-Q14 Data Outputs

Q15A–1 Data Output / Address Input

E Chip Enable

G Output Enable

BYTEV

PP

V

CC

V

SS

NC Not Connected Internally

Byte Mode / Program Supply

Supply Voltage

Ground

2/17

M27C800

Table 2. Absolute Maximum Ratings

(1)

Symbol Parameter Value Unit

T

A

T

BIAS

T

STG

(2)

V

IO

V

CC

(2)

V

A9

V

PP

Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or anyother conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extendedperiods may affect device reliability. Referalso to theSTMicroelectronics SURE Program andotherrelevant quality documents.

2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC voltage on Output is V

3. Depends on range.

Ambient Operating Temperature Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C

Input or Output Voltage (except A9) –2 to 7 V Supply Voltage –2 to 7 V A9 Voltage –2 to 13.5 V Program Supply Voltage –2 to 14 V

+0.5V with possible overshoot to VCC+2V for a period less than20ns.

CC

(3)

–40 to 125 °C

Table 3. Operating Modes

Mode E G

Read Word-wide Read Byte-wide Upper V Read Byte-wide Lower Output Disable V Program

V

IL

Verify Program Inhibit Standby Electronic Signature

Note: X = VIHor VIL,VID= 12V ± 0.5V.

V

IL

V

IL

Pulse V

V

IH

V

IH

V

IH

V

IL

V V V

V

BYTEV

IL

IH

IL

IH

V

IH

V

IL

V

IL

X X Hi-Z Hi-Z Hi-Z

V

PP

V

PP

V

PP

A9 Q15A–1 Q14-Q8 Q7-Q0

PP

X Data Out Data Out Data Out XVIHHi-Z Data Out X

V

IL

Hi-Z Data Out

X Data In Data In Data In X Data Out Data Out Data Out X Hi-Z Hi-Z Hi-Z

X X X Hi-Z Hi-Z Hi-Z

IL

V

IH

V

ID

Code Codes Codes

Table 4. Electronic Signature

Identifier A0

Manufacturer’s Code Device Code

V

IL

V

IH

Q15

and

Q7

Q14

and

Q6

Q13 and

Q5

Q12

and

Q4

Q11 and

Q3

Q10 and

Q2

Q9

and

Q1

Q8

andQ0Hex Data

00100000 20h 10110010 B2h

3/17

M27C800

Table 5. AC Measurement Conditions

High Speed Standard

Input Rise and FallTimes ≤ 10ns ≤ 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V

Figure 3. AC Testing Input Output Waveform

High Speed

3V

1.5V

0V

Standard

2.4V

0.4V

2.0V

0.8V

AI01822

DEVICE OPERATION

The operatingmodes of the M27C800 are listed in the OperatingModes Table.A singlepowersupply is required in the read mode. All inputs are TTL compatible except for VPPand 12V on A9 for the Electronic Signature.

Read Mode

The M27C800 has two organisations, Word-wide and Byte-wide. The organisation is selected by the signal level on the BYTEVPPpin. When BYTEV

PP

is at VIHthe Word-wide organisation is selected and the Q15A–1 pin is used for Q15 Data Output. When theBYTEVPPpin is at VILthe Byte-wide organisation is selected and the Q15A–1 pin is used for the Address Input A–1. When the memory is logically regarded as 16 bit wide, but read in the Byte-wide organisation, then with A–1 at VILthe

Figure 4. AC Testing Load Circuit

1.3V

1N914

3.3kΩ

DEVICE UNDER

TEST

CL= 30pFfor High Speed CL= 100pF for Standard CLincludes JIG capacitance

C

L

OUT

AI01823B

lower 8 bits of the 16 bit data are selected andwith A–1 at VIHthe upper 8 bits of the 16 bit data are selected.

The M27C800 has two control functions, both of which must be logically active in order to obtain data at the outputs. In addition the Word-wide or Byte- wide organisation must be selected.

Chip Enable (E) is thepowercontrolandshouldbe used for device selection. Output Enable (G)is the output control and should be used to gate data to the output pins independent of device selection. Assuming that the addresses are stable, the address access time (t from E to output (t

ELQV

output after a delay of t

) is equal to the delay

AVQV

). Data is available at the

from the falling edge

GLQV

of G, assuming that E has been low and the addresses have been stable forat least t

AVQV-tGLQV

.

4/17

M27C800

Table 6. Capacitance

(1)

(TA=25°C, f = 1 MHz)

Symbol Parameter Test Condition Min Max Unit

C

IN

C

OUT

Note: 1. Sampled only,not 100% tested.

Input Capacitance (BYTEV Output Capacitance

)V

PP

Table 7. Read Mode DC Characteristics

Input Capacitance (except BYTEVPP)V

(1)

=0V

IN

= 0V 120 pF

IN

V

=0V

OUT

10 pF

12 pF

(TA= 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)

Symbol Parameter Test Condition Min Max Unit

I

CC

I

CC1

I

CC2

I V

V

IH

V

Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.

Input Leakage Current

LI

Output Leakage Current

LO

0V ≤ V

E=V

I

Supply Current

OUT

E=V

I

OUT

Supply Current (Standby) TTL Supply Current (Standby) CMOS Program Current

PP

Input Low Voltage –0.3 0.8 V

IL

(2)

Input High Voltage 2 Output Low Voltage

OL

Output High Voltage TTL

OH

2. Maximum DC voltage on Output is V

CC

+ 0.5V.

E>V

I

OH

≤ V

IN

CC

≤ V

OUT

IL

CC

,G=VIL,

= 0mA, f = 8MHz

,G=VIL,

IL

= 0mA, f = 5MHz

E=V

IH

– 0.2V

CC

V

PP=VCC

I

= 2.1mA

OL

= –400µA

2.4 V

±1 µA

±10 µA

70 mA

50 mA

1mA 50 µA 10 µA

V

+1

CC

0.4 V

V

Standby Mode

The M27C800 has astandbymode which reduces the supply current from 50mA to 100µA. The

M27C800 is placedin the standby mode by applying aCMOS high signal to the Einput. When in the standby mode, the outputs are in a high impedance state, independent of the G input.

5/17

M27C800

Table 8A. Read Mode AC Characteristics

(1)

(TA= 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)

M27C800

Symbol Alt Parameter TestCondition

t

AVQV

t

BHQV

t

ELQV

t

GLQV

(2)

t

BLQZ

(2)

t

EHQZ

(2)

t

GHQZ

t

AXQX

t

BLQX

Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after V

2. Sampled only,not 100% tested.

3. Speed obtained with High Speed AC measurement conditions.

Address Validto Output

t

ACC

Valid BYTE High to Output

t

ST

Valid Chip Enable Low to

t

CE

Output Valid Output Enable Low to

t

OE

Output Valid

t

BYTE Low to Output Hi-Z

STD

Chip Enable High to

t

DF

Output Hi-Z Output Enable High to

t

DF

Output Hi-Z Address Transition to

t

OH

Output Transition BYTE Low to Output

t

OH

Transition

E=V

,G=V

IL

,G=V

IL

G=V

E=V

,G=V

IL

G=V

E=V

,G=V

IL

,G=V

IL

(3)

-50

Min Max Min Max Min Max

50 70 90 ns

30 35 45 ns

30 30 30 ns

030030030ns

555ns

-70 -90

PP.

Unit

Table 8B. Read Mode AC Characteristics

(1)

(TA= 0 to 70 °C or –40 to 85 °C; VCC=5V±5% or 5V ± 10%; VPP=VCC)

Symbol Alt Parameter Test Condition

t

AVQV

t

BHQV

t

ELQV

t

GLQV

(2)

t

BLQZ

(2)

t

EHQZ

(2)

t

GHQZ

t

AXQX

t

BLQX

Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after V

2. Sampled only,not 100% tested.

Address Valid to Output Valid E= VIL,G=V

ACC

t

BYTE High to Output Valid

ST

t

Chip Enable Low to Output Valid

CE

t

Output Enable Low to Output Valid

OE

t

BYTE Low to Output Hi-Z

STD

t

Chip Enable High to Output Hi-Z

DF

t

Output Enable High to Output Hi-Z

DF

t

Address Transitionto Output Transition E = VIL,G=V

OH

t

BYTE Low to Output Transition

OH

E=V

,G=V

IL

G=V

E=V

,G=V

IL

G=V

E=V

,G=V

IL

IL IL

IL

M27C800

Unit-100 -120/150

Min Max Min Max

100 120 ns 100 120 ns 100 120 ns

50 60 ns

40 50 ns 0 40 0 50 ns 0 40 0 50 ns

55ns 55ns

PP.

6/17