Datasheet L702N, L702B Datasheet (SGS Thomson Microelectronics)

2A QUAD DAR LINGTON SWITC H
SUSTAINING VOLTAGE: 70 V 2 A OUTPUT HIGH CURRENT GAIN IDEAL FOR DRIVING SOLENOIDS, DC
MOTORS, STEPPER MOTORS, RELAYS, DISPLAYS, ETC.
The L702 is a monolithic integrated circuit for high current and high voltage switching applications. It comprises four darlingt on transist ors with commo n emitter and open collector suitable for current s ink­ing applications mounted on the new POWERDIP and Multiwatt® packages.
This circuit reduces co mponents, sizes and costs; it can provide direct interface between low level logic and a variety of high current applications.
L702
Multiwatt-11
Powerdip 8 + 8
ORDER CODES : L702B - Powerdip
L702N - Multiwatt
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
P
T
October 1991
Collector-emitter Voltage (input open) 90 V
CEX
V
Input Voltage 30 V
i
I
Collector Current 3 A
C
Total Power Dissipation at T
tot
Total Power Dissipation at T Total Power Dissipationa t T Storage Temperature -55 to 150
stg
Operating Junction Temperature -25 to 150
T
j
9 to 16 90 °C
pin
70 °C
amb
90 °C
case
}
Powerdip
Multiwatt 20 W
4W
1.1 W
°C °C
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L702
STEPPING MOTOR BUFFER
CONNECT IO N DIAG RA MS (top view)
Powerdip Multiwatt
SCHEMATIC DIAGRAM (each Darlingt on)
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THERMAL DATA
Symbol Parameter Value Unit
R
th j-amb
R
th j-pins 9/16
R
th j-case
Thermal Resistance Junction Ambient
}
Powerdip
Thermal Resistance Junction Pins 9 to 16 Max 14 Thermal Resistance Junction-case Multiwatt Max 3
Max 70
L702
°C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
case
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CEX
V
CE(sust)
V
CE(sat)
h
Output Leakage Current VCE = 90 V 10 50 Collector Emitter (°) Sustaining
Voltage Collector Emitter Saturation
Voltage DC Forward Current Gain IC = 1 A
FE
I
Input Current Vi = 3.75 V
i
= 100 mA
I
C
IC = 1.25 A
= 2 mA
I
i
= 3 V
V
CE
V
= 2.4 V
i
70
1.000 4.000
1.3 1.9 V
7 3
11
6
Open Collector
Input Voltage Off Condition VCE = 70 V
V
i
On Condition V T T
Turn On Time Vs = 12 V 0.3
on
Turn Off Time
off
CE
= 10
R
L
= 3 V
0.1 mA
I
C
1 A
I
C
1
0.4 V
2.4 V
µA
V
mA mA
µs µs
Figure 1. Switching Time. Figure 2. ton and t
Test Circuit.
off
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L702
Figure 3. Peak Collector Current vs. Duty Cycle and Number of Outputs (L702B o nl y)
Figure 5. Collector Current vs. Input Voltage.
Figure 4. Collector Emitter Saturation Voltage vs. Collector Current.
Figure 6. Input Current vs. Input Voltage.
Figure 7. Safe Operating Areas (L702B).
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Figure 8. Safe Operating Areas (L702N).
MULTIW ATT1 1 PACKAGE MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5 0.197 B 2.65 0.104 C 1.6 0.063 D 1 0.039 E 0.49 0.55 0.019 0.022 F 0.88 0.95 0.035 0.037
G 1.57 1.7 1.83 0.062 0.067 0.072 G1 16.87 17 17.13 0.664 0.669 0.674 H1 19.6 0.772 H2 20.2 0.795
L 21.5 22.3 0.846 0.878
L1 21.4 22.2 0.843 0.874 L2 17.4 18.1 0.685 0.713 L3 17.25 17.5 17.75 0.679 0.689 0.699 L4 10.3 10.7 10.9 0.406 0.421 0.429 L7 2.65 2.9 0.104 0.114
M 4.1 4.3 4.5 0.161 0.169 0.177
M1 4.88 5.08 5.3 0.192 0.200 0.209
S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102
Dia1 3.65 3.85 0.144 0.152
mm inch
L702
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L702
POWERDIP PACKAGE MECHANICAL DAT A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 0.85 1.40 0.033 0.055
b 0.50 0.020
b1 0.38 0.50 0.015 0.020
D 20.0 0.787
E 8.80 0.346
e 2.54 0.100
e3 17.78 0.700
F 7.10 0.280
I 5.10 0.201 L 3.30 0.130 Z 1.27 0.050
mm inch
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L702
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement o f patents or other rights of third parties which may result from its use. No license is granted by implicat ion o r otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not a uthorized for use as critical components in life support devices or systems without ex press written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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