SGS Thomson Microelectronics L6932D1.2, L6932D2.5, L6932D1.8 Datasheet

HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR

■ 2V TO 14V INPUT VOLTAGE RANGE

■ 200mΩ Rdson MAX.

■ 200µA QUIESCENT CURRENT AT ANY LOAD

■ EXCELLENT LOAD AND LINE REGULATION

■ 1.8V AND 2.5V FIXED VOLTAGE

■ ADJUSTABLE FROM 1.2V TO 5V (L6932D1.2)

■ 1% VOLTAGE REGULATION ACCURACY

■ SHORT CIRCUIT PROTECTION

■ THERMAL SHUT DOW N

■ SO-8 (4+4) PACKAGE

APPLICATIONS

■ MOTHERBOARDS

■ MOBILE PC

■ HAND-HELD INSTRUMENTS

■ PCMCIA CARDS

■ PROCESSORS I/O

■ CHIPSET AND RAM SUPPLY

DESCRIPTION

The L6932 Ultra Low Drop Output linear regulator operates from 2V to 14V and is able to su pport 2A. Designed with an internal 50m

Ω

N-channel

L6932

SO-8 (4+4)

ORDERING NUMBERS: L6932D1.2 (SO-8 ) L6932D1.2TR (T&R) L6932D1.8 (SO-8 ) L6932D1.8TR (T&R) L6932D2.5 (SO-8 ) L6932D2.5TR (T&R)

Mosfet, can be usefull for the DC-DC conversion between 2.5V and 1.8V at 2A in portable applications reducing the power dissipation.

L6932 is available in 1.8V, 2.5V and adj version from

1.2V and ensure a voltage regulation accuracy of 1%.

The current limit is fix ed at 2.5A to contr ol the current in short circuit condition within ±8%. The current is sensed in the power mos in order to limit the power dissipation.

The device is also provided of a thermal shut down that limits the internal temperature at 150°C with an histeresys of 20°C. L6932 provides the Enable and the Power good functions.

TYPICAL OPERATING CIRCUIT

VIN

2V to 14V

VIN

2V to 14V

February 2003

IN

2

L6932D

C1 C2

5,6,7,8

IN

2

1

GND

L6932D1.2

C1

5,6,7,8

1

GND

EN

OUT

3

PGOOD

4

OUT

4

ADJ

3

1.8V or 2.5V

R1

R2

VOUT

1.2V to 5V

C2

1/10

L6932

PIN CONNECTIONS

EN

IN

ADJ

OUT 5

1 2 3 4

L6932D1.2

8 7 6

GND GND GND GND

EN

IN

OUT

PGOOD 5

1 2 3 4

L6932D1.8 L6932D2.5

8 7 6

GND GND GND GND

PIN FUNCTION

N°

L6232D

1.2

1 EN Enables the device if connected to Vin and disables the device if forced to gnd. 2 IN Supply voltage. This pin is connected to the drain of the internal N-mos. Connect this

ADJ – Connecting this pin to a voltage divider it is possible to programme the output voltage

3

OUT – Regulated output voltage. This pin is connected to the source of the internal N-mos.

4

L6232D

1.8/2.5

Description

pin to a capacitor larger than 10µF.

between 1.2V and 5V.

– OUT Regulated output voltage. This pin is connected to the source of the internal N-mos.

Connect this pin to a capacitor of 10µF.

– PGOOD Power good output. The pin is open drain and detects the output voltage. It is forced

low if the output voltage is lower than 90% of the programmed voltage.

5, 6, 7, 8 GND Ground pin.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

in

VIN and Pgood 14.5 V EN, OUT and ADJ -0.3 to (Vin +0.3) V

THERMAL DATA

Symbol Parameter Value Unit

R

th J-amb

T

max

T

stg

(*) Measured on Demoboard with about 4 cm2 of dissipating area 2 Oz.

2/10

Thermal Resistance Junction to Ambient 62 (*) °C/W Maximum Junction Temperature 150 °C Storage Temperature Range -65 to 150 °C

L6932

BLOCK DIAGRAM

GND

ELECTRICAL CHARACTERISTCS

(*) Specification referred to T

(Referred to the Fixed Voltage version)

IN

REFERENCE

VREF=1.25V

ENABLEEN

THERMAL

SENSOR

(Tj = 25°C, VIN = 5V unless otherwise specified)

from -25°C to 125°C.

j

VREF

0.9 VREF

+

ERROR

AMPL.

CHARGE

PUMP

+

CURRENT

LIMIT

DRIVER

OUT

PG

D99IN1100

Symbol Parameter Test Condition Min. Typ. Max. Unit

V V

R

I

V

Operating Supply Voltage 2 14 V

in

Output voltage L6932D1.2 Io = 0.1A; Vin = 3.3V 1.188 1.2 1.212 V

o

Output voltage L6932D1.8 I Output voltage L6932D2.5 I L6932D1.2

Line Regulation

L6932D1.8 Line Regulation

L6932D2.5 Line Regulation

L6932D1.2 Load Regulation V L6932D1.8 Load Regulation V L6932D2.5 Load Regulation V Drain Source ON resistance 200 mΩ

dson

Current limiting 2.3 2.5 2.7 A

occ

Quiescent current 0.2 0. 4 mA

I

q

Shutdown current 2V < Vin < 14V

sh

Ripple Rejection f = 120Hz, I

EN Input Threshold 0.5 0.65 0.8 V

en

= 0.1A; Vin = 3.3V 1.782 1.8 1.818 V

o

= 0.1A; Vin = 3.3V 2.475 2.5 2.525 V

o

V

= 2.5V ±10%; Io = 10mA 5 mV

in

= 3.3V ±10%; Io = 10mA 5 mV

V

in

= 5V ±10%; Io = 10mA 5 mV

V

in

V

= 2.5V ±10%; Io = 10mA 5 mV

in

= 3.3V ±10%; Io = 10mA 5 mV

V

in

= 5V ±10%; Io = 10mA 5 mV

V

in

V

= 3.3V ±10%; Io = 10mA 5 mV

in

= 5V ±10%; Io = 10mA 5 mV

V

in

= 3.3V; 0.1A < Io < 2A 15 mV

in

= 3.3V; 0.1A < Io < 2A 15 mV

in

= 3.3V; 0.1A < Io < 2A 15 mV

in

*

= 1A

V

= 5V, ∆Vin = 2Vpp

in

o

60 75 dB

25 µA

3/10