SGS Thomson Microelectronics L6386, L6386D Datasheet
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
HIGHVOLTAGERAIL UP TO 600V
dV/dt IMMUNITY +- 50 V/nsec iN FULL TEM-
PERATURERANGE
DRIVER CURRENTCAPABILITY:
400 mASOURCE,
650 mASINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESISANDPULL DOWN
UNDER VOLTAGE LOCK OUT ON LOWER
AND UPPERDRIVING SECTION
INTEGRATEDBOOTSTRAPDIODE
OUTPUTSIN PHASEWITH INPUTS
DESCRIPTION
The L6386 is an high-voltage device, manufactured with theBCD ”OFF-LINE”technology. It has
a Driver structure that enables to drive inde-
L6386
SO14 DIP14
ORDERING NUMBERS:
L6386D L6386
pendent referenced Channel Power MOS or
IGBT. The Upper (Floating) Section is enabled to
work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
BLOCK DIAGRAM
V
CC
DETECTION
4
3
HIN
2
SD
1
LIN
SGND
7 6
UV
BOOTSTRAP DRIVER
LOGIC
UV
DETECTION
LEVEL
SHIFTER
VREF
R
R
S
-
+
LVG
DRIVER
DRIVER
V
CC
D97IN520D
HVG
14
13
12
Vboot
C
H.V.
HVG
OUT
LVG
9
PGND
8
DIAG
5
CIN
BOOT
TO LOAD
July 1999
1/10
L6386
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vout Output Voltage -3 toVboot - 18 V
Vcc Supply Voltage - 0.3 to +18 V
Vboot Floating Supply Voltage -1 to 618 V
Vhvg Upper Gate Output Voltage - 1 to Vboot V
Vlvg Lower Gate Output Voltage -0.3 toVcc +0.3 V
Vi Logic Input Voltage -0.3 toVcc +0.3 V
Vdiag Open Drain Forced Voltage -0.3 to Vcc +0.3 V
Vcin Comparator InputVoltage -0.3 toVcc +0.3 V
dVout/dt Allowed Output Slew Rate 50 V/ns
Ptot Total Power Dissipation (Tj = 85 °C) 750 mW
Tj Junction Temperature 150 °C
Ts Storage Temperature -50 to 150 °C
Note:
ESD immunity for pins 12, 13 and 14 is guaranteed up to900V (Human Body Model)
PIN CONNECTION
LIN
SD
HIN
V
DIAG
CIN
SGND
1
2
3
4
CC
5
6
7 PGND
D97IN521A
14
V
boot
13
HVG
12
OUT
11
N.C.
10
N.C.
9
LVG
8
THERMAL DATA
Symbol Parameter SO14 DIP14 Unit
R
th j-amb
Thermal ResistanceJunction to Ambient 165 100 °C/W
PIN DESCRIPTION
N. Name Type Function
1 LIN I Lower Driver Logic Input
2 SD (*) I Shut Down Logic Input
3 HIN I UpperDriver Logic Input
4 VCC I Low Voltage Supply
5 DIAG O Open Drain Diagnostic Output
6 CIN I Comparator Input
7 SGND Ground
8 PGND Power Ground
9 LVG (*) O LowSide Driver Output
10, 11 N.C. NotConnected
12 OUT O Upper Driver Floating Driver
13 HVG (*) O HighSide Driver Output
14 Vboot BootstrappedSupply Voltage
(*) The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA),with VCC >3V.This allows toomit the ”bleeder” resistor connected
betweenthegate and the source of the externalMOSFET normally used to hold the pin low; the gate driver assures low impedance also
in SD condition.
2/10
L6386
RECOMMENDED OPERATINGCONDITIONS
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
Vout 12 Output Voltage Note1 580 V
Vboot-
Vout
fsw Switching Frequency HVG,LVGloadCL= 1nF 400 kHz
Vcc 4 Supply Voltage 17 V
T
Note 1:
ELECTRICALCHARACTERISTICS
AC Operation(Vcc = 15V; Tj = 25°C)
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
ton 1.3
toff High/Low SideDriver Turn-Off
tsd 2 vs
tr 13,9 Rise Time CL = 1000pF 50 ns
tf 13,9 Fall Time CL = 1000pF 30 ns
DC Operation(Vcc = 15V; Tj = 25°C)
14 Floating Supply Voltage Note1 17 V
j
if the condition Vboot - Vout < 18V is guaranteed,Vout can range from -3 to580V.
Junction Temperature -45 125 °C
High/Low SideDriver Turn-On
Propagation Delay
vs 9,
13
Vout = 0V 110 150 ns
Vout = 0V 105 150 ns
Propagation Delay
Shut Down to High/Low Side
9,13
Propagation Delay
Vout = 0V 105 150 ns
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
Low Supply Voltage Section
Vcc 4 Supply Voltage 17 V
Vccth1 Vcc UV Turn On Threshold 11.5 12 12.5 V
Vccth2 Vcc UV Turn Off Threshold 9.5 10 10.5 V
Vcchys Vcc UV Hysteresis 2 V
Iqccu UndervoltageQuiescentSupplyCurrent Vcc ≤ 11V 200 µA
Iqcc Quiescent Current Vcc = 15V 250 320 µA
Bootstrapped Supply Section
Vboot 14 Bootstrapped Supply Voltage 17 V
Vbth1 Vboot UV TurnOn Threshold 10.7 11.9 12.9 V
Vbth2 Vboot UV TurnOff Threshold 8.8 9.9 10.7 V
Vbhys Vboot UV Hysteresis 2 V
Iqboot Vboot QuiescentCurrent Vout = Vboot 200
Ilk Leakage Current Vout = Vboot = 600V 10 µA
Rdson Bootstrap Driver on Resistance (*) Vcc≥12.5V;Vin = 0V 125
Driving Buffers Section
Iso 9, 13 High/Low SideDriver Short Circuit
VIN = Vih (tp < 10µs) 300 400 mA
Source Current
Isi High/Low SideDriver Short Circuit
500 650 mA
Sink Current
Logic Inputs
Vil 1,2,3 Low Level Logic Threshold Voltage 1.5 V
Vih High LevelLogic Threshold Voltage 3.6 V
Iih High LevelLogic Input Current VIN = 15V 50 70
Iil Low LevelLogic Input Current VIN = 0V 1 µA
−(V
(*)
R
where I
is tested in thefollowing way: R
DSON
ispin 8 current whenV
1
(V
=
DSON
I
CBOOT=VCBOOT1,I2
CC−VCBOOT1)
1(VCC,VCBOOT1
whenV
CBOOT=VCBOOT2
− V
CC
)−I2(VCC,V
CBOOT2
CBOOT2
.
)
)
A
µ
Ω
A
µ
3/10
Loading...