Datasheet L6384, L6384D Datasheet (SGS Thomson Microelectronics)



HIGH-VOLTAGEHALF BRIDGE DRIVER

HIGHVOLTAGERAIL UP TO 600 V
dV/dt IMMUNITY +- 50 V/nsec IN FULL TEM-

PERATURERANGE
DRIVER CURRENTCAPABILITY:

400 mASOURCE,
650 mASINK

SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD

CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESISANDPULL DOWN

SHUTDOWN INPUT
DEAD TIME SETTING
UNDERVOLTAGELOCKOUT
INTEGRATEDBOOTSTRAPDIODE
CLAMPINGON Vcc
SO8/MINIDIPPACKAGES

DESCRIPTION

The L6384 is an high-voltage device, manufac­tured with the BCD”OFF-LINE” technology.It has

L6384

SO8 Minidip

ORDERING NUMBERS:

L6384D L6384

an Half - Bridge Driver structure that enables to
drive N Channel PowerMOS or IGBT. The Upper
(Floating) Section is enabled to work with voltage
Rail up to 600V. TheLogic Inputs are CMOS/TTL
compatible for ease of interfacing with controlling
devices. Matched delays between Lower and Up­per Section simplify high frequency operation.
Dead timesettingcan bereadily accomplishedby
means of an external resistor.

BLOCK DIAGRAM

V

CC

1

IN

V

CC

Idt

DT/SD

3

Vthi

2

DETECTION

BOOTSTRAP DRIVER

UV

DEAD

TIME

LOGIC

RS

LEVEL

SHIFTER

LVG

DRIVER

V

CC

HVG

DRIVER

H.V.

V

8

BOOT

C

BOOT

HVG

7

OUT

6

LVG

5

GND

4

D97IN518A

LOAD

May 2000

1/10

L6384

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

Vout Output Voltage -3 toVboot -18 V

Vcc Supply Voltage(*) - 0.3 to 14.6 V

Is Supply Current(*) 25 mA

Vboot Floating Supply Voltage -1 to 618 V

Vhvg Upper Gate Output Voltage -1 to Vboot V

Vlvg Lower Gate Output Voltage -0.3 toVcc +0.3 V

Vi Logic Input Voltage -0.3 toVcc +0.3 V

Vsd Shut Down/Dead Time Voltage -0.3 toVcc +0.3 V

dVout/dt Allowed Output Slew Rate 50 V/ns

Ptot Total Power Dissipation (Tj = 85 °C) 750 mW

Tj Junction Temperature 150 °C

Ts Storage Temperature -50 to 150 °C

(*) The device has an internal Clamping Zenerbetween GND and the Vcc pin, It must not be supplied by a Low Impedence Voltage Source.

Note: ESD immunity for pins 6, 7 and 8 is guaranteedup to 900 V (HumanBody Model)

PIN CONNECTION

IN

V

CC

DT/SD

GND

1
2
3
4 LVG

D97IN519

V

8
7
6

BOOT

HVG
VOUT

5

THERMAL DATA

Symbol Parameter SO8 Minidip Unit

R

th j-amb

Thermal ResistanceJunction to Ambient 150 100 °C/W

PIN DESCRIPTION

N. Name Type Function

1 IN I Logic Input:it is in phase with HVG and in opposition of phase with LGV. It is compatible

2 Vcc I Supply input voltage: there is an internalclamp [Typ. 15.6V]
3 DT/SD I High impedance pin with two functionalities. When pulled lower than Vdt [Typ. 0.5V] the

4 GND Ground

to V

voltage. [Vil Max = 1.5V, Vih Min = 3.6V]

CC

device isshut down. A voltage higher than Vdt sets the dead time between high side gate
driver and low sidegate driver. The dead timevalue can be set forcing a certain voltage
level on the pin or connectinga resistor between pin 3 and ground.
Care must be taken to avoid below threshold spikes on pin 3 that can cause undesired
shut down of the IC. For this reason the connection of the components between pin 3 and
ground has to be as shortas possible. This pin can not be left floating for the same reason.
The pin has not be pulled through a low impedance to V

current source that feeds Rdt. The operative range is:Vdt....270K ⋅ Idt, that allows a dt

range of0.4 - 3.1µs.

, because of thedrop on the

CC

2/10

L6384

PIN DESCRIPTION

(continued)

N. Name Type Function

5 LVG O Low Side Driver Output: the output stage can deliver 400mA source and 650mA sink [Typ.

Values].
The circuitguarantees 0.3V max on the pin (@ I

= 10mA) with VCC> 3V andlower than

sink

the turnon threshold. This allows to omit the bleederresistor connected between the gate
and thesourceof the external mosfet normally used to hold the pin low; thegate driver
ensures lowimpedance also in SD conditions.

6 Vout O Upper Driver Floating Reference: layout care has to be taken to avoid below ground

spikes on this pin.

7 HVG O High Side Driver Output: the output stage can deliver 400mA sourceand 650mA sink

[Typ. Values].
The circuitgurantees 0.3V max between this pin and Vout (@ I

= 10mA) with VCC>3V

sink

and lowerthan the turn on threshold.This allows to omit the bleeder resistorconnected
between thegate and the source of the external mosfet normally used to hold the pin low;
the gatedriver ensures low impedance also in SD conditions.

8 Vboot Bootstrap Supply Voltage: it is the upper driverfloating supply. The bootstrapcapacitor

connected betweenthis pin and pin6 can be fed by an internal structure named ”bootstrap
driver” (a patentedstructure). This structure can replace the externalbootstrap diode.

RECOMMENDED OPERATINGCONDITIONS

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

Vout 6 Output Voltage Note1 580 V

Vboot -

Vout

fsw Switching Frequency HVG,LVGloadCL= 1nF 400 kHz

Vcc 2 Supply Voltage Vclamp V

T

Note 1: If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.

8 Floating Supply Voltage Note1 17 V

j

Junction Temperature -45 125 °C

ELECTRICALCHARACTERISTICS
AC Operation(V

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

ton 1 vs

5,7

tonsd 3 vs

5,7

toff 1 vs

5,7

tr 7,5 Rise Time CL = 1000pF 70 ns
tf 7,5 Fall Time CL = 1000pF 30 ns

= 14.4V;Tj = 25°C)

CC

High/Low SideDriver
Turn-On Propagation Delay

Vout = 0V
R

= 47kΩ

dt

200+dt ns

Shut Down Input Propagation Delay 220 280 ns

High/Low SideDriver
Turn-Off Propagation Delay

Vout = 0V
R

= 47k

dt

Vout = 0V
R

= 146kΩ

dt

Vout = 0V
R

= 270k

dt

Ω

250 300 ns

200 250 ns

170 200 ns

Ω

DC Operation(VCC= 14.4V;Tj = 25°C)

Supply Voltage Section

Vclamp 2 Supply VoltageClamping Is =5mA 14.6 15.6 16.6 V

Vccth1 2 Vcc UV Turn On Threshold 11.5 12 12.5 V
Vccth2 2 Vcc UV Turn Off Threshold 9.5 10 10.5 V

3/10

L6384

DC Operation(continued)

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

Vcchys 2 Vcc UV Hysteresis 2 V

Iqccu 2 UndervoltageQuiescent SupplyCurrent Vcc ≤ 11V 150 µA

Iqcc 2 Quiescent Current Vin = 0 380 500 µA

Bootstrapped supply Voltage Section

Vboot 8 Bootstrap Supply Voltage 17 V

IQBS Quiescent Current Vout= Vboot;IN= HIGH 200 µA

ILK High VoltageLeakage Current VHVG=Vout= Vboot=

600V

Rdson Bootstrap Driver on Resistance (*) Vcc≥12.5V;IN= LOW 125

High/Low Side Driver

Iso 5,7 Source Short Circuit Current VIN = Vih (tp < 10µs) 300 400 mA

Isi Sink Short Circuit Current VIN = Vil (tp < 10µs) 500 650 mA

Logic Inputs

Vil 2,3 Low Level Logic Threshold Voltage 1.5 V

Vih High LevelLogic Threshold Voltage 3.6 V

Iih High Level Logic Input Current VIN = 15V 50 70

Iil Low Level Logic Input Current VIN = 0V 1

Iref 3 Dead Time Setting Current 28

dt 3 vs

5,7

Dead Time SettingRange (**) Rdt = 47k

Rdt = 146
Rdt = 270k

0.4 0.5

1.5

2.7 3.1

Vdt 3 Shutdown Threshold 0.5 V

10 µA

µ
µ
µ

µs
µs
µ

Ω

A
A
A

s

(V

(*)

(**) Pin 3 is a highimpedence pin. Therefore dt canbe set also forcing a certain voltage V3on this pin. The dead time is the same obtained

is tested in thefollowing way: R

R

DSON

is pin 8 current when V

where I

1

with aRdt if it is: Rdt ⋅ Iref = V

CBOOT=VCBOOT1,I2

.

3

DSON

CC

=

I

1(VCC,VCBOOT1

when V

− V

−(VCC− V

CBOOT1)

)−I2(VCC,V

CBOOT=VCBOOT2

CBOOT2

CBOOT2

)

)

Figure 1. Input/OutputTiming Diagram

IN

SD

HVG

LVG

D99IN1017

4/10

L6384

Figure 2. TypicalRise and Fall Times vs.

Load Capacitance

time

(nsec)

250

200

150

100

50

0

012345C(nF)

For both high and low side buffers @25°C Tamb

D99IN1015

Tr

Tf

BOOTSTRAPDRIVER

A bootstrap circuitryis neededto supply the high
voltage section. This function is normally accom­plished by a high voltage fast recovery diode (fig.
4a). In the L6384 a patented integratedstructure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shownin fig. 4b

An internal charge pump (fig. 4b) provides the
DMOS driving voltage .

The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.

CBOOT selection and charging

To choose the proper C

BOOT

:

value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
gate charge :

The ratio betweenthecapacitorsC

is related to the MOS total

EXT

Q

C

EXT

gate

=

V

gate

andC

EXT

BOOT

is proportionalto the cyclicalvoltage loss .
It hasto be:

C

>>>C

e.g.: if Q

gate

3nF. With C

BOOT

is 30nC and V

= 100nF the drop would be

BOOT

EXT

gate

is 10V, C

EXT

300mV.
If HVG has to be supplied for a long time, the

C

selectionhas to take into accountalso the

BOOT

leakage losses.
e.g.: HVG steady state consumptionis lower than

200µA, so if HVG T
supply 1µCtoC

EXT

is 5ms, C

ON

BOOT

has to

. This charge on a 1µFca-

Figure 3. QuiescentCurrent vs. Supply

Voltage

Iq

(µA)

4

10

3

10

2

10

10

02468101214VS(V)

pacitormeans a voltagedrop of 1V.

The internal bootstrap driver gives great advan­tages: the external fast recovery diode can be
avoided (it usually has great leakage current).
This structure can work only if V

OUT

GND (or lower) and in the meanwhilethe LVGis
on. The charging time (T

charge

) of the C
the time in which both conditions are fulfilled and
it has to be long enough to chargethe capacitor.

The bootstrap driver introduces a voltage drop
due to the DMOS R

(typical value: 125

DSON

Ohm). At low frequency this drop can be ne­glected. Anyway increasing the frequency it
must be taken in to account.

The following equation is useful to compute the
drop on the bootstrap DMOS:

= I

V

drop

chargeRdson

where Q
power MOS, R

is the gate charge of the external

gate

is the on resistance of the

dson

bootstrap DMOS, and T

→ V

charge

Q

=

drop

T

charge

is the chargingtime

of the bootstrapcapacitor.
For example: using a power MOS with a total

gate charge of 30nC the drop on the bootstrap
DMOSis about1V, if the T

is

V

drop

hasto betakeninto accountwhenthe voltage

V

drop

droponC

BOOT

30nC

=

⋅ 125Ω ~ 0.8V

5µs

is calculated: if this dropis too high,

charge

is 5µs. In fact:

or the circuit topology doesn’t allow a sufficient
chargingtime,an externaldiodecan be used.

D99IN1016

is close to

gate

R

dson

BOOT

is

5/10

L6384

Figure 4. Bootstrap Driver

D

BOOT

V

S

HVG

LVG

V

V

BOOT

H.V.

OUT

ab

Figure 5. Dead Time vs. Resistance.

3.5

3.0

2.5

2.0

s)

1.5

µ

dt (

1.0

0.5

@ Vcc = 14.4V

Typ.

C

BOOT

TO LOAD

V

V

BOOT

H.V.

OUT

V

S

HVG

LVG

Figure 7. DriverPropagationDelay vs.

Temperature.

400

@ Vcc = 14.4V

300

@ Rdt = 47kOhm

@ Rdt= 270kOhm

@ Rdt = 146kOhm

200

Ton,Toff(ns)

100

Typ.
Typ.

Typ.

C

BOOT

TO LOAD

D99IN1067

0.0
50 100 150 200 250 300

Rdt (kOhm)

Figure 6. Dead Time vs. Temperature.

3

6/10

Typ.

2.5
2

1.5

dt (us)

Typ.

1

0.5

Typ.

0

-45 -25 0 25 50 75 100 125

R=270K

@ Vcc =14.4V

R=146K

R=47K

Tj (°C)

0

-45 -25 0 25 50 75 100 125
Tj (°C)

Figure8.ShutdownThresholdvs.Temperature

1

0.8

@ Vcc = 14.4V

0.6

Typ.

0.4

Vdt (V)

0.2

0

-45 -25 0 25 50 75 100 125
Tj (°C)

L6384

Figure9. VccUV Turn On vs.Temperature

15

14

13

Typ.

12

Vccth1 (V)

11

10

-45 -25 0 25 50 75 100 125
Tj (°C)

Figure10.Vcc UVTurn Off vs.Temperature

13

12

11

Typ.

10

Vccth2 (V)

9

8

-45 -25 0 25 50 75 100 125
Tj (°C)

Figure 11. Output Source Current vs. Tem-

perature.

1000

800

@ Vcc = 14.4V

600

Typ.

400

Current (mA)

200

0

-45 -25 0 25 50 75 100 125
Tj (°C)

Figure12. Output SinkCurrent vs.Temperature

1000

@ Vcc = 14.4V

800

Typ.

600

400

Current (mA)

200

0

-45 -25 0 25 50 75 100 125
Tj (°C)

7/10

L6384

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

mm inch

OUTLINE AND

MECHANICAL DATA

Minidip

8/10

L6384

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65
a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020

c1 45° (typ.)

D (1) 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F (1) 3.8 4.0 0.15 0.157

L 0.4 1.27 0.016 0.050

M 0.6 0.024

S8°(max.)

(1) D andF do not include moldflash or protrusions. Mold flash or

potrusions shallnot exceed0.15mm(.006inch).

mm inch

0.065

OUTLINE AND

MECHANICAL DATA

SO8

9/10

L6384

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