SGS Thomson Microelectronics L2724, L2720, L2722 Datasheet
LOWDROPDUAL POWER OPERATIONALAMPLIFIERS
.OUTPUTCURRENT TO 1A
.OPERATESATLOW VOLTAGES
.SINGLEOR SPLIT SUPPLY
.LARGE COMMON-MODE AND DIFFEREN-
TIALMODERANGE
.LOW INPUT OFFSETVOLTAGE
.GROUNDCOMPATIBLEINPUTS
.LOW SATURATIONVOLTAGE
.THERMAL SHUTDOWN
.CLAMPDIODE
DESCRIP T IO N
The L2720, L2722 and L2724 are monolithic integratedcircuitsin powerdip, minidipandSIP-9packages,intendedforuse as poweroperationalamplifiersin a widerangeof applicationsincludingservo
amplifiers and power supplies.
Theyare particularlyindicatedfordriving, inductive
loads,as motor and finds applicationsin compactdiscVCR automotive,etc.
Thehighgain and highoutputpowercapabilityprovidesuperior performancewhateveranoperational
amplifier/powerboostercombinationis required.
L2720/2/4
PO W E RDIP
(8+ 8)
MINIDI P
(Plastic)
SIP9
ORDERING NUMBERS : L2720(Powerdip)
L2722(Minidip)
L2724(SIP9)
PI N CO NNECT IONS (top views)
L2720 L2722 L2724
November1996
1/10
L2720/2/4
BLOCK DI AGRAM
L2720 L2722 L2724
SCHEMATIC DIAGRAM (one section)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Supply Voltage 28 V
S
Peak Supply Voltage (50ms) 50 V
S
Input Voltage V
V
i
V
Differential Input Voltage
i
I
DC Output Current 1 A
o
Peak Output Current (non repetitive) 1.5 A
I
p
Power Dissipation at T
tot
=80oC (L2720), T
amb
=75oC (L2720)
T
case
=50oC (L2724)
T
case
=50oC (L2722)
amb
s
±V
1
5
10
Storage and Junction Temperature –40 to 150
s
T
2/10
V
V
P
stg,Tj
W
o
C
L2720/2/4
THERMAL DATA
SIP-9 Powerdip Minidip
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS
= 24V, T
V
s
Symbol Parameter Test Conditions Min. Typ. Max. Unit
CMR Common Mode Rejection f = 1kHz 66 84 dB
V
DROP(HIGH)
V
DROP(LOW) V
Thermal Resistance Junction-case Max. 10oC/W 15oC/W 70oC/W
Thermal Resistance Junction-ambient Max. 70oC/W 70oC/W 100oC/W
= 25oC unless otherwise specified
amb
V
s
V
s
I
s
I
b
V
os
I
os
Single Supply Voltage 4 28 V
Split Supply Voltage
Quiescent Drain Current
V
s
V
=
o
2
V
= 24V
s
V
=8V 9 15
s
± 2 ± 14
10 15
Input Bias Current 0.2 1
Input Offset Voltage 10 mV
Input Offset Current 100 nA
SR Slew Rate 2
B Gain-bandwidth Product 1.2 MHz
R
G
v
e
N
I
N
SVR Supply Voltage Rejection f = 100Hz V
C
s
T
sd
Input Resistance 500
i
O.L. Voltage Gain f = 100Hz
f = 1kHz
Input Noise Voltage
Input Noise Voltage 200 pA
B = 22Hz to 22kHz
R
= 10kΩ Vs= ±12V
G
V
= 0.5V Vs= ±6V
R
= 24V
s
Vs= ±2.5V to ±12V Ip= 100mA
= 500mA
I
p
= ±2.5V to ±12V Ip= 100mA
s
= 500mA
I
p
Channel Separation f = 1KHz Vs= 24V
R
=10Ω Vs=6V
L
= 30dB
G
v
70 80
60
10
70
60
75
80
0.7
0.3
0.5 1
60
60
1 1.5
Thermal Shutdown Junction
Temperature 145
V
mA
µA
V/µs
kΩ
dB
µV
dB
V
V
dB
o
C
Figure1 : QuiescentCurrent vs. Supply Voltage FIgure 2 : Open Loop Gain vs. Frequency
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