SGS Thomson Microelectronics HDP01-0512N Datasheet

®

HDP01-0512N

Appl icat ion Sp ecif ic Dis cret es

A.S.D.

APPLICATIONS

PROTECTION FOR THE +5V AND +12V
POWER LINE S OF :

- Hard disk drives

- Floppy disk drives

- CD-ROMs, CD-R, CD-RW

- DVDs

FEATURES

PROTECTION OF BOTH 5V AND 12V SUPPLY
RAILS.

MAXIMUM CURRENT ON THE 5V LINE 3A
DURING 1s.

MONOLITHIC INTEGRATION IN PLANAR
TECHNOLOGY.

DESCR IPT ION

This device is dedicated to the protect ion of the
+5V power supply line against transient overvol­tages due to surge of power rails up to the activa­tion of the serial t hermal protection element. It is
also dedicated to the protection of the +12V rail
against transient overvoltages.

TM

HARD DISK DRIVE

POWER SUPPLY PROTECTION

PL5

GND

PL5

PL12

SOT223

BENEFITS

COMPONENT C OUNT RE DUC TION
PCB SURFACE REDUCTION
SIMPLIFIED SYSTEM PROTECTION DESIGN

BASIC APPLICATION DIAGRAM

Unprotected 5V

Unprotected 12V

PL12 PL5

HDP01-0512N

note: The element in series with the 5V line is a resettable device, like Raychem Polyswitch MiniSMD075.

TM

: ASD is trademark of STMicroelectronics.

April 1999 - Ed: 6A

Protected 5V

Protected 12V

Gnd

PL12

OVERVOLTAGE

CLAMPING

PL5

OVERVOLTAGE

DETECTION

1/6

HDP01-0512N

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

t

on

T

op

T

T

stg

T

L

note 1 : I-

Conduction time with I­Operating temperature range
Maximum junction temperature

j

Storage temperature range
Lead solder temperature (10s dur ation)

is the current going through the 5V line (PL5)

PL5

THERMAL RES IST ANCE

Symbol Parameter Value Unit

Rth (j-t)

Rth (j-a)

note 2 : With 5cm2 copper (e=35µm) surface under tab.

Junction to tab
Junction to ambient (note 2)

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

= 3A DC (note1)

PL5

1s

0 to + 75 ° C

125 ° C

- 55 to + 150 ° C
260 ° C

30
60

°

C/W

°

C/W

I

+5V PROTECTION

ION

IA-PL5

(T

VA-PL5

amb

IRM-PL5

VON-PL5

VRM-PL5

VNA-PL5

ELECTRICAL CHARACTERISTICS

PROTECTION OF 5 V LINE (PL5)

Symbol Parameter

V

-PL5

NA

-PL5

V

A

IRM-PL5

IA-PL5

-PL5

V

ON

Non activation voltage between PL5 and Gn d at IRM=100µA
Activation voltage between PL5 and Gnd
Leakage current between PL5 and Gnd at VRM =5V
Activation current between PL5 and Gnd
Voltage drop on active state at ION=3A

= 25° C)

IRM-PL12

I

+12V PROTECTION

VRM-PL12 VBR-PL12

Value

Min. Typ. Max.

6.0 V

Slope = 1 / Rd

Unit

7.0 7.4 V
1

µ

10 mA

1.3 V

A

PROTECTION OF 12 V LINE (PL12)

Symbol Parameter

Breakdown voltage at IR=1mA
Leakage current between PL12 and Gnd at VRM =12V
Dynamic resistance. Square pulse Ipp=3A, tp = 2.5µ s

2/6

V

I

BR

RM

-PL12

-PL12
Rd

Value

Min. Typ. Max.

14 16 V

1

2.5

Unit

µ

A

Ω