SGS Thomson Microelectronics DMV56-F5, DMV56, DMV32-F5, DMV32, DMV16-F5 Datasheet

DMV series

®

August 1999 - Ed: 2A

DAMPER + MODULATION DIODE FOR VIDEO

Symbol Parameter

Value

Unit

MODUL DAMPER

V

RRM

Repetitive peak reverse voltage 600 1500 V

I

FSM

Surge non repetitive forward current tp = 10 m s

sinusoidal

DMV16 50 50 A
DMV32 60 75
DMV56 60 80

T

stg

Storage temperature range - 40 to + 150 °C

T

j

Maximum operating junction temperature 150

TURBOSWITCH is a trademark of STMicroelectronics

ABSOLUTE RATINGS

(limiting values, per diode)

Insulated TO-220AB

(Bending option F5 available)

FULL KIT IN ONE PACKAGE
HIGH BREAKDOWN VOLTAGE CAPABILITY
VERY FAST RE COVE RY DIODE
SPECIFIED TURN ON SWITCHING

CHARACTERISTICS
LOW STATIC AND PEAK FORWARD

VOLT AG E DRO P FOR LOW DISSIP ATION
INSULATED VERSION:

Insulated voltage = 2500 V

RMS

Capacitance = 7 pF
PLANAR TECHNOLOGY ALLOW ING HIGH

QUALITY AND BEST ELECTRICAL
CHARACTERISTICS

OUTSTANDING PERFORMANCE OF WELL
PROVEN DTV AS DAMPER AND
TURBOSWITCH

TM

AS M ODULA TION

FEATURES AND BENE FITS

High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.

The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks to
the internal ceramic insulation layer.

DESCRIPTION

MODUL DAMPER

I

F(AV)

3 A & 6 A 5 A & 6 A

V

RRM

600 V 1500 V

t

rr

50 ns 135 ns

V

F

(max) 1.5 V 1.35 V

MAIN PRODUCT CHARACTERISTI CS

1

2

3

DAMPER MODULA TION

123

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Symbol Parameter

Value

Unit

DMV16 DMV32 DMV56

R

th(j-c)

Damper junction to case 5.3 4.8 3.6

°

C/W

R

th(j-c)

Modulation junction to case

6.5 5.3 5.3

R

th(c)

Coupling

0.2 0.2 0.2

R

th(j-c)

Total as per full I

F(AV)

maximum ratings 6.0 5.1 4.5

THERMAL RESISTANCES

Symbol Parameter Test conditions

Value

Unit

Tj = 25°C Tj = 125°C

Typ. Max. Typ. Max.

V

F

* Forward voltage drop IF = 5 A

DMV16

1.6 1.0 1.5 V

I

F

= 6 A

DMV32

1.5 1.1 1.35

I

F

= 6 A

DMV56

1.8 1.1 1.5

I

R

** Revers e leak age c urrent VR = V

RRM

DMV16

60 100 500

µ

A

DMV32

100 100 1000

DMV56

100 100 1000

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
DMV16: P = 1.14 x I

F(AV)

+ 0.072 x I

F2(RMS)

DMV32: P = 1.069 x I

F(AV)

+ 0.047 x I

F2(RMS)

DMV56: P = 1.15 x I

F(AV)

+ 0.059 x I

F2(RMS)

STATIC ELECTRICAL CHARACTE RISTICS OF THE DAMP ER DIODES

Symbol Parameter Test conditions

Value

UnitTj = 25°C Tj = 125°C

Typ. Max. Typ. Max.

V

F

* Forward voltage drop IF = 3A DMV16 1.4 1 1.3 V

I

F

= 5A DMV32 1.75 1.2 1.5

I

F

= 5A DMV56 1.75 1.2 1.5

I

R

**

Reverse leakage current V

R

= 480V

DMV16 20 150 500

µ

A
DMV32 100 600 2000
DMV56 100 600 2000

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
DMV16: P = 1.06 x I

F(AV)

+ 0.08x I

F2(RMS )

DMV32: P = 1.15 x I

F(AV)

+ 0.07 x I

F2(RMS)

DMV56: P = 1.15 x I

F(AV)

+ 0.07 x I

F2(RMS)

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

®

DMV series

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Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

rr

Revers e recovery t i me IF = 100mA

I

R

= 100mA

I

RR

= 10mA

Tj = 25° C

DMV16 1500 ns
DMV32 850
DMV56 750

t

rr

Revers e recovery t i me IF = 1A

dI

F

/dt = -50A/µs

V

R

= 30V

Tj = 25°C DMV16 200 300 ns

DMV32 130 175
DMV56 110 135

RECOVERY CHARAC TERISTICS OF THE DAM PER DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

fr

Forward re covery ti me IF = 6A

dI

F

/dt = 80A/µs

V

FR

= 3V

Tj = 100°C

DMV16 350 ns
DMV32 570
DMV56 350

V

FP

Peak forward voltage IF = 6A

dI

F

/dt = 80A/µs

Tj = 100°C DMV16 25 34 V

DMV32 21 28
DMV56 19 26

TURN-ON SWITCHING CHARACT ERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

rr

Revers e recovery t i me IF = 100mA

I

R

= 100mA

I

RR

= 10mA

Tj = 25°C DMV16 210 650 ns

DMV32 110 350
DMV56 110 350

t

rr

Revers e recovery t i me IF = 1A

dI

F

/dt = -50A/µs

V

R

= 30V

Tj = 25°C DMV16 95 ns

DMV32 50
DMV56 50

RECOVERY CHARAC TERISTICS OF THE MOD ULATION DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

fr

Forward re covery ti me IF = 3A

dI

F

/dt = 80A/µs

V

FR

= 3V

Tj = 100°C DMV16 500 ns

I

F

= 5A

dI

F

/dt = 80A/µs

V

FR

= 3V

DMV32 300
DMV56 300

V

FP

Peak forward voltage IF = 3A

dI

F

/dt = 80A/µs

Tj = 100°C DMV16 8 V

I

F

= 5A

dI

F

/dt = 80A/µs

DMV32 10
DMV56 10

TURN-ON SWITCHING CHARACT ERISTICS OF THE MODULATION DIODE

®

DMV series

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