SGS Thomson Microelectronics DMV1500M7 Datasheet

1/9

DMV1500M7

®

July 2002 - Ed: 1A

DAMPER + MODULATION DIODE FOR VIDEO

Symbol Parameter

Value

Unit

MODUL DAMPER

V

RRM

Repetitive peak reverse voltage

700 1500 V

I

FSM

Surge non repetitive forward current tp = 10 ms sinusoidal

50 75 A

T

stg

Storage temperature range

-40to+150 °C

T

j

Maximum operating junction temperature

150

ABSOLUTE RATINGS (limiting values, per diode)

Insulated TO-220AB

(Bending option F5 available)

■

700V Modulation diode

■ Fullkitinonepackage

■ High breakdown voltage capability

■ Very fast recovery diode

■

Specified turn on switching characteristics

■ Low static and peak forward voltage dropfor low

dissipation

■ Insulated version:

Insulated voltage = 2500 V

RMS

Capacitance = 7 pF

■

Planar technology allowing high quality and
best electrical characteristics

■

Outstanding performance of well proven DTV
as damper and new faster Turbo 700V
technology as modulation.

FEATURES AND BENEFITS

High voltage semiconductor especially designed
for horizontal deflection stageinstandardandhigh
resolution video display with E/W correction.

The insulated TO-220AB package includes both
theDAMPERdiodeandthe MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks
to the internal ceramic insulation layer.

DESCRIPTION

MODUL DAMPER

I

F(AV)

3A 6A

V

RRM

700 V 1500 V

t

rr

(max) 55 ns 135ns

V

F

(max) 1.55 V 1.65 V

MAIN PRODUCT CHARACTERISTICS

1

2

3

DAMPER MODULATION

123

®

DMV1500M7

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Symbol Parameter Value Unit

R

th(j-c)

Damper junction to case

4.8 °C/W

R

th(j-c)

Modulation junction to case

5.5

THERMAL RESISTANCES

Symbol Parameter Test conditions

Value

UnitTj = 25°C Tj = 125°C

Typ. Max. Typ. Max.

V

F

*

Forward voltage drop I

F

=6A

1.4 2.2 1.2 1.65 V

I

R

**

Reverse leakage current V

R

= 1500V

100 100 1000 µA

Pulse test : * tp = 380 µs, δ <2%

**tp = 5 ms, δ <2%

To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
P=1.37xI

F(AV)

+ 0.047 x I

F2(RMS)

STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES

Symbol Parameter

Test

conditions

Value

UnitTj = 25°C Tj = 125°C

Typ. Max. Typ. Max.

V

F

*

Forward voltage drop I

F

=3A

2.0 1.25 1.55 V

I

R

**

Reverse leakage current V

R

= 700V

20450µA

Pulse test : * tp = 380 µs, δ <2%

** tp = 5 ms, δ <2%

To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
P=0.98xI

F(AV)

+0.19xI

F2(RMS)

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

rr

Reverse recovery time IF= 100mA

I

R

= 100mA

I

RR

= 10mA

Tj = 25°C

750 ns

t

rr

Reverse recovery time IF=1A

dI

F

/dt = -50A/µs

V

R

= 30V

Tj = 25°C

110 135 ns

RECOVERY CHARACTERISTICS OF THE DAMPER DIODE

®

DMV1500M7

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Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

fr

Forward recovery time IF=6A

dI

F

/dt = 80A/µs

V

FR

=3V

Tj = 100°C

570 ns

V

FP

Peak forward voltage IF=6A

dI

F

/dt = 80A/µs

Tj = 100°C

21 28 V

TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

rr

Reverse recovery time IF= 100mA

I

R

= 100mA

I

RR

= 10mA

Tj = 25°C

120 360 ns

t

rr

Reverse recovery time IF=1A

dI

F

/dt = -50A/µs

V

R

= 30V

Tj = 25°C

55 ns

RECOVERY CHARACTERISTICS OF THE MODULATION DIODE

Symbol Parameter Test conditions

Value

Unit

Typ. Max.

t

fr

Forward recovery time IF=3A

dI

F

/dt = 80A/µs

V

FR

=2V

Tj = 100°C

240 ns

V

FP

Peak forward voltage IF=3A

dI

F

/dt = 80A/µs

Tj = 100°C

9V

TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE