SGS Thomson Microelectronics DMV1500L Datasheet

®

DMV1500L

DAMPER + MODULATION DIODE FOR VIDEO

MAIN PRODUCT CHARACTERISTICS

MODUL DAMPER

I

F(AV)

V

RRM

t

(max) 50 ns 170ns

rr

V

(max) 1.4 V 1.5 V

F

3A 4A

600 V 1500 V

FEATURES AND BENEFITS

Fullkitinonepackage

■

■ High breakdown voltage capability

■ Very fast recovery diode

■ Specified turn on switching characteristics

■

Low static and peak forward voltage dropfor low dissipation

■ Insulated version:

Insulated voltage = 2500 V

RMS

Capacitance = 7 pF

■

Planar technology allowing high quality and best electrical characteristics

■

Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation

DAMPER MODULATION

123

3

2

1

Insulated TO-220AB

(Bending option F5 available)

DESCRIPTION

High voltage semiconductor especially designed for horizontal deflection stageinstandardandhigh resolution video display with E/W correction.

The insulated TO-220AB package includes both theDAMPERdiodeandthe MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter

V

RRM

I

FSM

T

stg

T

July 2001 - Ed: 3A

Repetitive peak reverse voltage Surge non repetitive forward current tp = 10 ms sinusoidal Storage temperature range Maximum operating junction temperature

j

Value

Unit

MODUL DAMPER

600 1500 V

35 50 A

-40to+150 °C 150

1/9

DMV1500L

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

R

th(j-c)

STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES

Damper junction to case Modulation junction to case

5.5 °C/W 6

Value

Symbol Parameter Test conditions

Typ. Max. Typ. Max.

Forward voltage drop I

*

V

F

**

I

R

Pulse test : * tp = 380 µs, δ <2%

To evaluate the maximum conduction losses of the DAMPER diode use the following equations : P=1.2xI

Reverse leakage current V

**tp = 5 ms, δ <2%

+ 0.075 x I

F(AV)

F2(RMS)

=4A

F

= 1500V

R

1.2 1.7 1.1 1.5 V 100 100 1000 µA

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE

Value

Symbol Parameter

Test

conditions

Typ. Max. Typ. Max.

Forward voltage drop I

*

V

F

**

I

R

Pulse test : * tp = 380 µs, δ <2%

To evaluate the maximum conduction losses of the MODULATION diode use the following equations : P=1.12xI

Reverse leakage current V

** tp = 5 ms, δ <2%

+ 0.092 x I

F(AV)

F2(RMS)

=3A

F

= 600V

R

1.8 1.1 1.4 V 20350µA

UnitTj = 25°C Tj = 125°C

RECOVERY CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

Reverse recovery time IF= 100mA

= 100mA

I

R

= 10mA

I

RR

Reverse recovery time IF=1A

/dt = -50A/µs

dI

F

= 30V

V

R

2/9

t

rr

t

rr

Tj = 25°C

Value

Typ. Max.

Unit

850 ns

130 170 ns

®

RECOVERY CHARACTERISTICS OF THE MODULATION DIODE

DMV1500L

Symbol Parameter Test conditions

t

rr

t

rr

Reverse recovery time IF= 100mA

= 100mA

I

R

= 10mA

I

RR

Reverse recovery time IF=1A

/dt = -50A/µs

dI

F

= 30V

V

R

Tj = 25°C

TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE

Symbol Parameter Test conditions

t

fr

V

FP

Forward recovery time IF=4A

/dt = 80A/µs

dI

F

=3V

V

FR

I

= 6.5A

F

/dt = 50A/µs

dI

F

=3V

V

FR

Peak forward voltage IF=4A

/dt = 80A/µs

dI

F

= 6.5A

I

F

/dt = 50A/µs

dI

F

Tj = 100°C

Tj = 25°C

Tj = 100°C

Tj = 25°C

Value

Typ. Max.

Unit

110 350 ns

50 ns

Value

Typ. Max.

Unit

450 ns

450

28 36 V

13 17

TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE

Symbol Parameter Test conditions

t

fr

V

FP

®

Forward recovery time IF=3A

/dt = 80A/µs

dI

F

=2V

V

FR

Peak forward voltage IF=3A

/dt = 80A/µs

dI

F

Tj = 100°C

Value

Typ. Max.

240 ns

8V

Unit

3/9