SGS Thomson Microelectronics DB-960-60W Datasheet

DB-960-60W

60W / 26V / 925-960 MHz PA using 1x PD57070S

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 60 W min. with 13 dB gain over

OUT

925 - 960 MHz

• 10:1 LOAD VSWR CAPABILITY

• BeO FREE AMPLIFI E R.

DESCRIPTION

The DB-960-60W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for GSM / GPRS / E DGE bas e
station applications.
The DB-960-60W is desig ned in coope ration with

Européenne de Télécommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmo nics lower t han
30 dBc.

The

MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm

LdmosST

ORDER CODE

DB-960-60W

FAMILY

PRELIMINARY DATA

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

V

DD

I

D

P

DISS

T

CASE

P

amb

November, 20 2002

Supply voltage 32 V
Drain Current 8 A
Power Dissipation 95 W
Operating Case Temperature -20 to +85

Max. Ambient Temperature +55

CASE

= 25 °C)

o

C

o

C

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DB-960-60W

ELECTRICAL SPECIFICATION (T

= +25 oC, Vdd = 26 V, Idq = 200 mA)

amb

Symbol Test Conditions Min. Typ. Max. Unit

FREQ. Frequency Range 925 960 MHz

P

Gain
P

1dB

Flatness
Flatness

ND at P

IRTL

Harmonic

VSWR

Spurious

IMD

1dB

3

OUT

= 60 W

13 14 dB
Over frequency range: 925 - 960 MHz 60 65 W
Over frequency range and @ P
P

from 0.1 W to 60 W

OUT

P

1dB

Input return Loss P
P

= 60 W

OUT

from 0.1 W to 60 W

OUT

Load Mismatch all phases @ P
10:1 VSWR all phases and P
P

= 60 WPEP

OUT

= 60 W

OUT

= 60 W

OUT

from 0.1 to 60 W

OUT

+/- 0.5 dB

1dB

45 52 %

-15 -10 dB

-30 dBc

10:1

-76 dBc

-25 dBc

TYPICAL PERFORMANCE

P1dB and Efficiciency Vs Frequency

80

Efficiency

76

Power Gain Vs Frequency (P

60

56

18

17

16

OUT

= 60 W)

72

P1dB (W)

68

64

Vdd = 26 V
Idq = 200 mA

60

910 920 930 940 950 960 970

P1dB

f (MHz)

52

Nd (%)

48

44

40

15

14

Gp (dBm)

13

12

11

10

910 920 930 940 950 960 970

f (MHz)

Vdd = 26 V
Idq = 200 m A

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