SGS Thomson Microelectronics DB-915-12W Datasheet
DB-915-12W
12W / 12V / 875-915 MHz PA using 1x PD55015S
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 12 W min. with 12 dB gain over
OUT
875 - 915 MHz
• 10:1 LOAD VSWR CAPABILITY
• BeO FREE AMPLIFI E R.
DESCRIPTION
The DB-915-12W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed as booster for
GSM-R applications.
The DB-915-12W is desig ned in coope ration with
Européenne de Télécommunications S.A
(www.etsa.fr), for high gain and broadband
performance operating in common source mode
at 12 V, capable of withstanding load mismatch up
to 10:1 all phases and with harmo nics lower t han
30 dBc.
The
MECHANICAL SPECIFICATION
L=60 mm W=30 mm H=10 mm
LdmosST
ORDER CODE
DB-915-12W
FAMILY
PRELIMINARY DATA
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
DD
I
D
P
DISS
T
CASE
T
amb
November, 20 2002
Supply voltage 18 V
Drain Current 4.5 A
Power Dissipation at T
Operating Case Temperature -20 to +85
Max. Ambient Temperature +55
CASE
CASE
= +85
= 25 °C)
°
C
67 W
o
C
o
C
1/5
DB-915-12W
ELECTRICAL SPECIFICATION (T
= +25 oC, Vdd = 26 V, Idq = 150 mA)
amb
Symbol Test Conditions Min. Typ. Max. Unit
FREQ. Frequency Range 875 915 MHz
P
Gain
P
1dB
Flatness
Flatness
ND at P
IRTL
Harmonic
VSWR
Spurious
IMD
1dB
3
OUT
= 12 W
11 12 dB
Over frequency range: 875 - 915 MHz 12 W
Over frequency range and @ P
P
from 0.1 W to 60 W
OUT
P
1dB
Input return Loss P
P
= 12 W
OUT
from 0.1 W to 12W
OUT
Load Mismatch all phases @ P
10:1 VSWR all phases and P
P
= 12 WPEP
OUT
= 12 W
OUT
= 12 W
OUT
from 0.1 to 12 W
OUT
+/- 0.5 dB
1dB
45 50 %
-6 dB
-30 dBc
10:1
-76 dBc
-25 dBc
2/5
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