SGS Thomson Microelectronics D45H11, D45H8, D45H5 Datasheet
D45H5
®
PNP SILICON POWER TRANSISTORS
■ STM PREFERRED SALESTYPES
■ LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
■ FAST SWITCHING SPEED
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
■ GENER AL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The D45H5, D45H8 and D45H11 are silicon
multiepitaxial planar PNP transistors mounted in
Jedec TO-220 plastic package.
They are inteded for various switching and
general purpose applications.
D45H8, D45H11 are complementary with D44H8,
D44H11.
D45H8 \ D45H11
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
D45H5 D45H8 D45H11
V
V
I
P
T
June 1998
Collector-Emitter Voltage (IB = 0) -45 -60 -80 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
I
Collector Current -10 A
C
Collector Peak Current -20 A
CM
I
Base Current -5 A
B
Total Dissipation at Tc ≤ 25 oC50W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/4
D45H5/D45H8/D45H11
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
= rated V
V
CB
= -5V -100 µA
V
EB
CEO
-10 µA
IC = -100 mA
for D45H5
for D45H8
for D45H11
IC = -8 A IB = -0.4 A
I
= -8 A IB = -0.8 A
C
-45
-60
-80
-1
-1
IC = -8 A IB = -0.8 A -1.5 V
Saturation Voltage
∗ DC Current Gain IC = -2 A VCE = -1 V
h
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
I
= -4 A VCE = -1 V
C
60
40
120
70
V
V
V
V
2/4
Loading...