
D45H5
®
PNP SILICON POWER TRANSISTORS
■ STM PREFERRED SALESTYPES
■ LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
■ FAST SWITCHING SPEED
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
■ GENER AL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The D45H5, D45H8 and D45H11 are silicon
multiepitaxial planar PNP transistors mounted in
Jedec TO-220 plastic package.
They are inteded for various switching and
general purpose applications.
D45H8, D45H11 are complementary with D44H8,
D44H11.
D45H8 \ D45H11
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
D45H5 D45H8 D45H11
V
V
I
P
T
June 1998
Collector-Emitter Voltage (IB = 0) -45 -60 -80 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
I
Collector Current -10 A
C
Collector Peak Current -20 A
CM
I
Base Current -5 A
B
Total Dissipation at Tc ≤ 25 oC50W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
1/4

D45H5/D45H8/D45H11
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
= rated V
V
CB
= -5V -100 µA
V
EB
CEO
-10 µA
IC = -100 mA
for D45H5
for D45H8
for D45H11
IC = -8 A IB = -0.4 A
I
= -8 A IB = -0.8 A
C
-45
-60
-80
-1
-1
IC = -8 A IB = -0.8 A -1.5 V
Saturation Voltage
∗ DC Current Gain IC = -2 A VCE = -1 V
h
FE
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
I
= -4 A VCE = -1 V
C
60
40
120
70
V
V
V
V
2/4

TO-220 MECHANICAL DATA
D45H5/D45H8/D 45H11
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
3/4

D45H5/D45H8/D45H 11
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information n or for any infrin gement of patents or othe r rights of third parties which may result from its use. No licens e i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
.
4/4