SGS Thomson Microelectronics D44H8, D44H11 Datasheet
NPN SILICON POWER TRANSISTORS
■ SGS-THOMSONPREFERRED SALESTYPES
■ LOW COLLECTOR-EMITTERSATURATION
VOLTAGE
■ FAST SWITCHINGSPEED
APPLICATIONS
■ GENERALPURPOSESWITCHING
■ GENERALPURPOSEAMPLIFIER
DESCRIPTION
The D44H8, and D44H11 are silicon
multiepitaxial planar NPN transistors mounted in
Jedec TO-220 plastic package.
They are inteded for various switching and
general purpose applications.
D44H8, D44H11 are complementary with D45H8,
D45H11.
TO-220
D44H8
D44H11
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
D44H8 D44H1 1
V
V
I
P
T
Collector-Emitter Voltage ( IB=0) 60 80 V
CEO
Emitter-Base Voltage ( IC=0) 5 V
EBO
Collect or Current 10 A
I
C
Collect or Peak Curr ent 20 A
CM
Tot al Dissipation at Tc≤ 25oC50W
tot
Storage Temperature -65 to 150
stg
Max. O per ating Junc tion Temperat u re 150
T
j
o
C
o
C
June 1997
1/5
D44H8/D44H11
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Ma x. Unit
I
CBO
I
EBO
V
CEO(sus )
V
CE(sat)
Collector Cut- of f
Current (I
E
=0)
Emit ter Cut-o f f C urr ent
=0)
(I
C
∗ Collector-E mitter
Sust aining V olt ag e
∗ Collector-E mitter
V
=ratedV
CB
V
=5V 100 µA
EB
CEO
10 µA
IC=100mA
for D44H8
for D44H11
60
80
IC=8A IB=0.4A 1 V
Saturation Voltage
V
BE(sat )
∗ Base-Emitt er
IC=8A IB= 0.8 A 1.5 V
Saturation Voltage
∗ DC Current Gain IC=2A VCE=1V
h
FE
∗
Pulsed: Pulse duration = 300 µs, duty cycle≤ 2%
=4A VCE=1V
I
C
60
40
V
V
Safe Operating Area DeratingCurves
2/5
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