SGS Thomson Microelectronics BZW50-47B, BZW50-15B, BZW50-82, BZW50-10, BZW50-10B Datasheet
BZW50-10,B/180,B
TRANSIL
FEATURES
PEAK PULSEPOWER: 5000W (10/1000µs)
STAND-OFF VOLTAGERANGE:
From10V to 180V
UNI ANDBIDIRECTIONALTYPES
LOW CLAMPINGFACTOR
FASTRESPONSETIME
UL RECOGNIZED
DESCRIPTION
Transildiodes provide high overvoltageprotection
by clamping action. Their instantaneousresponse
to transientovervoltagesmakes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
ABSOLUTE MAXIMUMRATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
AG
TM
P
PP
P Powerdissipationon infinite heatsink T
I
FSM
T
stg
T
T
L
Peakpulse power dissipation (seenote 1) Tj initial= T
Nonrepetitivesurge peak forwardcurrent
forunidirectionaltypes
Storagetemperaturerange
Maximumjunctiontemperature
j
Maximumlead temperaturefor solderingduring 10s at 5mm
amb
=75°C 6.5 W
amb
tp = 10ms
Tj initial= T
amb
5000 W
500 A
- 65 to+ 175
175
230 °C
fromcase
Note 1 : Fora surge greater than themaximum values,the diode will fail in short-circuit.
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th (j-l)
R
th (j-a)
January 1998Ed : 2
Junctionto leads 15 °C/W
Junctionto ambienton printedcircuit. L
=10mm 65 °C/W
lead
°C
°C
1/5
BZW50-10,B/180,B
ELECTRICALCHARACTERISTICS
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
α
V
Stand-offvoltage
Breakdownvoltage
Clampingvoltage
Leakagecurrent @ V
Peakpulse current
T Voltagetemperaturecoefficient
Forwardvoltagedrop
F
Types IRM@V
RM
(T
RM
amb
=25°C)
VBR@I
R
VVCLV
VCL@I
PP
BR
I
I
F
I
RM
I
PP
VCL@I
V
F
V
TC
PP
α
V
RM
max min max max max typ
note2 10/1000µs 8/20µs note3 note4
Unidirectional BidirectionalµAVVmAVAVA10
-4
/°CpF
BZW50-10 BZW50-10B 5 10 11.1 1 18.8 266 23.4 2564 7.8 24000
BZW50-12 BZW50-12B 5 12 13.3 1 22 227 28 2143 8.4 18500
BZW50-15 BZW50-15B 5 15 16.6 1 26.9 186 35 1714 8.8 13500
BZW50-18 BZW50-18B 5 18 20 1 32.2 155 41.5 1446 9.2 11500
BZW50-22 BZW50-22B 5 22 24.4 1 39.4 127 51 1177 9.6 8500
BZW50-27 BZW50-27B
BZW50-33 BZW50-33B
BZW50-39 BZW50-39B
5 27 30 1 48.3 103 62 968 9.8 7000
5 33 36.6 1 59 85 76 789 10 5750
5 39 43.3 1 69.4 72 90 667 10.1 4800
BZW50-47 BZW50-47B 5 47 52 1 83.2 60.1 108 556 10.3 4100
BZW50-56 BZW50-56B 5 56 62.2 1 99.6 50 129 465 10.4 3400
BZW50-68 BZW50-68B 5 68 75.6 1 121 41 157 382 10.5 3000
BZW50-82 BZW50-82B
BZW50-100 BZW50-100B
5 82 91 1 145 34 189 317 10.6 2600
5 100 111 1 179 28 228 263 10.7 2300
BZW50-120 BZW50-120B 5 120 133 1 215 23 274 219 10.8 1900
BZW50-150 BZW50-150B 5 150 166 1 269 19 343 175 10.8 1700
BZW50-180 BZW50-180B 5 180 200 1 322 16 410 146 10.8 1500
%I
PP
100
50
0
Note 2 : Pulsetest: tp<50 ms.
Note 3 : ∆VBR=αT*(T
Note 4 : VR= 0 V, F= 1 MHz.For bidirectionaltypes,
capacitancevalue is divided by 2.
10 s
PULSE WAVEFORM 10/1000 s
1000 s
- 25)*VBR(25°C)
amb
2/5
Fig. 1:
Peak pulse power dissipation versus initial
junctiontemperature(printed circuitboard).
t
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