SGS Thomson Microelectronics BZV47C24, BZV47C22, BZV47C200, BZV47C20, BZV47C18 Datasheet
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FEATURES
VOLTAGERANGE: 5.1V to200 V
HERMETICALLYSEALEDPLASTICCASE:
F126 PACKAGE
HIGHSURGECAPABILITY: 55 W (10 ms) .
DESCRIPTION
2 W silicon Zener diodes.
BZV47C5V1/ 200
2W ZENER DIODES
F126
ABSOLUTE RATINGS(Tamb = 25°C)
Symbol Parameter Value Unit
P
T
stg
T
j
T
L
Powerdissipationon infiniteheatsink T
=55°C2W
amb
Storagetemperaturerange
Maximumjunction temperature
Maximumlead temperaturefor solderingduring10s at 5mm
- 65 to + 175
175
230 °C
fromcase
THERMAL RESISTANCES
Symbol Parameter Value Unit
(j-l)
R
th
R
(j-a)
th
Junctiontolead
Junctiontoambient on printedcircuit on recommendedpad
60 °C/W
100 °C/W
layout
°
°C
C
January 1998 Ed : 2
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BZV47C5V1/ BZV47C200
ELECTRICALCHARACTERISTIC (Tamb= 25°C)
TYPES VZT@I
min. max. max. typ. max. T
ZT
rZK/I
I
ZK
ZT
∝VZIR/V
V
R
R
IZM I
=55°C
amb
(1) (1) (1) (2) (3)
-4
VVΩmA 10
/°C µAV mA A
BZV47C5V1 4.8 5.4 5 100 1 5 1 370 7.8
BZV47C5V6 5.2 6 2 100 2.5 5 1 330 7.1
BZV47C6V2 5.8 6.6 2 100 3.2 5 1 300 6.4
BZV47C7V5 7 7.9 2 100 4.5 5 2 250 5.4
BZV47C10 9.4 10.6 4 50 5.5 5 7.6 185 4
BZV47C12 11.4 12.7 7 50 6.5 1 9.1 155 3.3
BZV47C15 13.8 15.6 10 50 7 1 11.4 130 2.7
BZV47C18 16.8 19.1 15 25 7.5 0.5 13.7 105 2.2
BZV47C20 18.8 21.2 15 25 7.5 0.5 15.2 94 2
BZV47C22 20.8 23.3 15 25 8 0.5 16.7 86 1.8
BZV47C24 22.8 25.6 15 25 8 0.5 18.2 78 1.7
BZV47C27 25.1 28.9 15 25 8.5 0.5 20.5 69 1.5
BZV47C30 28 32 15 25 8.5 0.5 22.8 62 1.3
BZV47C36 34 38 40 10 8.5 0.5 27.4 52 1.1
BZV47C39 37 41 40 10 9 0.5 29.6 48 1
BZV47C47 44 50 45 10 9 0.5 35.7 40 0.85
BZV47C68 64 72 80 10 9 0.5 51.7 27 0.59
BZV47C100 94 106 200 5 9 0.5 76 18 0.4
BZV47C150 138 156 300 5 9.5 0.5 114 12.8 0.27
BZV47C200 188 212 350 5 9.5 0.5 152 9.4 0.20
Note 1 : Pulse test : tp ≤ 50ms
Note 2 : On infiniteheatsink :L = 10mm
Note 3 : rectangular waveform(tp = 10ms)
Forward voltage drop : V
≤ 1.2 V (Tamb= 25°C, IF= 500mA)
F
ZSM
Fig. 1 : Power dissipation versus ambient
temperature.
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Fig.2 :Thermalresistanceversus lead length.
BZV47C5V1/ BZV47C200
Fig. 3 : Relative variation of thermal impedance
junction to ambient versus pulse duration (PC
boardFR4, L
leads
= 10mm).
Fig.5 : Peak forwardcurrent versuspeak forward
voltage drop(typical values).
Fig. 4 : Junction capacitance versus reverse
voltageapplied (typical values).
Fig. 6 : Leakage current versus regulation voltage (typicalvalues).
I(µA)
R
1E+2
1E+1
Tj = 150°C
= 0.75*VZT
V
R
Fig. 7 : Differential resistance versus regulation
voltage (typical values).
1E+0
1E-1
1E-2
VZT (V)
1E-3
1 10 100 200
Fig. 8 : Peak pulse power versus pulse duration
(rectangularwaveform,maximumvalues).
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BZV47C5V1/ BZV47C200
MARKING : Logo,Date Code,TypeCode, Cathode Band (for unidirectionaltypes only).
ORDERCODE
BZV47C 5V1
Type
PACKAGEMECHANICAL DATA
F126 (Plastic)
Packaging : standard packaging is in tapeand reel.
NominalVoltage
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 6.05 6.20 6.35 0.238 0.244 0.250
B 26 31 1.024 1.220
∅C 2.95 3.00 3.05 0.116 0.118 0.120
∅D 0.76 0.81 0.86 0.030 0.032 0.034
L1 1.27 0.050
Note1 : TheleadisnotcontrolledwithinzoneL1.
Weight = 0.40 g.
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from itsuse. No
license is grantedby implicationor otherwise under any patentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change withoutnotice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for useas critical componentsin life support devices or systemswithoutexpress
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
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The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
4/4
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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