SGS Thomson Microelectronics BYW99W-200, BYW99PI-200, BYW99P-200 Datasheet
BYW99P/PI/W
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSIONTOP3I:
Insulatingvoltage= 2500 VDC
Capacitance= 12 pF
DESCRIPTION
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packagedin SOT93,TOP3I or TO247 this device
is intendedfor use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
A1
A2
(Plastic)
BYW99P-200
SOT93
K
isolated
TOP3I
(Plastic)
BYW99PI-200
A2
K
A1
TO247
(Plastic)
BYW99W-200
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMSforward current
Averageforwardcurrent
δ
=0.5
SOT93 / TO247 Tc=120°C Per diode
TOP3I Tc=115°C Per diode
Surgenon repetitiveforwardcurrent
Storageand junctiontemperaturerange
tp=10ms
sinusoidal
Per diode
Per diode
35 A
15 A
15
200 A
- 40 to + 150
- 40 to + 150
Symbol Parameter Value Unit
V
RRM
October 1999 Ed : 2A
Repetitivepeak reversevoltage
200 V
°
°C
C
1/6
BYW99P/PI/W
THERMALRESISTANCES
Symbol Parameter Value Unit
Rth (j-c)
Rth (c)
Junctionto case
Coupling
SOT93 / TO247 Perdiode
Total
TOP3I Per diode
Total
SOT93 / TO247
TOP3I
1.8
1.0
2.0
1.25
0.2
0.5
Whenthe diodes1 and 2 are used simultaneously:
Tj-Tc(diode 1) = P(diode1) x R
STATICELECTRICAL CHARACTERISTICS
(Per diode)+ P(diode2) x R
th(j-c)
(Perdiode)
th(c)
Symbol TestConditions Min. Typ. Max. Unit
I
*
R
V
F**
=25°CV
T
j
T
= 100°C
j
Tj= 125°CI
=V
R
RRM
=12A
F
20
1.5 mA
0.85 V
°
C/W
°
C/W
µ
A
T
= 125°CI
j
T
=25°CI
j
Pulse test : * tp = 5 ms,δ <2%
** tp = 380µs,
<2%
δ
=25A
F
=25A
F
1.05
1.15
To evaluatethe conduction losses use the followingequation :
P = 0.65x I
F(AV)
+0.016 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
I
=1A
R
=1A
I
F
V
=30V
R
=1A
F
V
=1.1 x V
FR
=1A tr = 10 ns 2 V
F
Irr = 0.25A 25 ns
/dt = -50A/µs40
dI
F
tr=10ns 15 ns
F
2/6
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