SGS Thomson Microelectronics BYW98-200 Datasheet
®
BYW98-200
HIGH EFFICI EN CY FAST RECO VE RY REC T IFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
3A
200 V
Tj (max) 150 °C
(max) 0.85 V
V
F
trr (max) 35 ns
FEATURES AND BE NE F ITS
VERY LOW CONDUCTION LOS SES
NEGLIGIBLE SWIT CHING LOS SE S
LOW FORWARD AND REVERSE RECOVERY
TIMES
DESCRIPTION
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
ABSOLUTE RATINGS
(limiting values)
DO-201AD
(Plastic)
Symbol Parameter Value Unit
V
I
RRM
FRM
Repetitive peak reverse voltage
Repetitive peak forward current *
tp=5 µs
200 V
110 A
F=1KHz
I
F (AV)
I
FSM
Average forward current*
Surge non repetitive forward current
Ta = 75°C
δ
= 0.5
= 10ms
t
p
3A
70 A
Sinusoidal
T
stg
Tj
T
L
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s at
- 65 to + 150
150
230
4mm from cas e
* On infinite heatsink with 10mm lead length.
October 1999 - Ed: 4C
°
C
°
C
°
C
1/5
BYW98-200
THERMAL RE SISTA NC E
Symbol Parameter Value Unit
Rth (j-a)
* On infinite heatsink with 10mm lead length.
Junction-ambient *
25
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
*
R
Reverse leakage
T
= 25°CV
j
current
= 100°C
T
j
V
**
F
Pulse test : * tp = 5 ms, δ < 2 %
To evaluate the conduction losses use the following equations:
P = 0.75 x I
Forward voltage drop T
** tp = 380 µs, δ < 2 %
+ 0.04 I
F(AV)
F2(RMS)
= 25°CI
j
= 100°CI
T
j
= V
R
= 9A
F
= 3A
F
RRM
10
0.5 mA
1.2 V
0.78 0.85
RECOVERY CHARACTE RISTIC S
°
C/W
µ
A
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Q
rr
t
fr
V
FP
Tj = 25°CI
V
= 30V
R
Tj = 25°CI
V
≤ 30V
R
Tj = 25°CI
= 1A dIF/dt = - 50A/µs
F
= 3A dIF/dt = - 20A/µs
F
= 3A dIF/dt = - 50A/µs
F
Measured at 1.1 x V
Tj = 25°CI
= 3A dIF/dt = - 50A/µs
F
max
F
35 ns
15 nC
20 ns
5V
2/5
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