SGS Thomson Microelectronics BYW81PI-200, BYW81P-200 Datasheet
BYW81P-200
BYW81PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSION:
Insulatingvoltage= 2500 V
Capacitance= 7 pF
DESCRIPTION
Single chip rectifier suited for switchmode power
supplyand highfrequencyDC to DC converters.
Packagedin TO-220ACthis device is intended for
use in low voltage, high frequency inverters, free
wheelingand polarityprotectionapplications.
RMS
K
TO-220AC
(Plastic)
BYW81P-200
A
isolated
TO-220AC
(Plastic)
BYW81PI-200
A
K
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMSforward current
Averageforward current
δ = 0.5
BYW81P Tc=115°C
BYW81PI Tc=90°C
Surgenon repetitiveforwardcurrent
Storageand junctiontemperaturerange
tp=10ms
sinusoidal
35 A
15 A
15
200 A
- 40 to+ 150
- 40 to+ 150
Symbol Parameter Value Unit
V
RRM
October 1999 - Ed: 2D
Repetitivepeakreverse voltage
200 V
°C
°C
1/6
BYW81P-200/ BYW81PI-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth(j-c)
Junctionto case
BYW81P
BYW81PI
2.0 °C/W
3.5
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
I
*
R
V
F**
Pulse test : * tp = 5 ms, duty cycle < 2 %
=25°CV
T
j
T
= 100°C
j
Tj= 125°CI
T
= 125°CI
j
T
=25°CI
j
** tp = 380µs, duty cycle < 2 %
=V
R
RRM
=12A
F
=25A
F
=25A
F
20
1.5 mA
0.85 V
1.05
1.15
µ
A
To evaluatethe conductionlossesuse thefollowing equation:
P = 0.65x I
F(AV)
+0.016 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
=1A
I
R
I
=1A
F
=30V
V
R
=1A
F
=1.1 x V
V
FR
=1A tr = 10 ns 2 V
F
Irr = 0.25A 25 ns
dI
/dt = -50A/µs40
F
tr=10ns 15 ns
F
2/6
Loading...