SGS Thomson Microelectronics BYW81G-200 Datasheet
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BYW81G-200
BYW81P-200 / BYW81PI-200
®
July 2002 - Ed: 3E
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
TO-220AC
(Plastic)
BYW81P-200
■
SUITED FOR SMPS
■
VERY LOW FORWARD LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
HIGH SURGE CURRENT CAPABILITY
■
HIGH AVALANCHE ENERGY CAPABILITY
■
INSULATED VERSION :
Insulating voltage = 2500 V
RMS
Capacitance = 7 pF
DESCRIPTION
FEATURES
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in TO-220AC and D²PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
TO-220AC Ins.
(Plastic)
BYW81PI-200
Symbol Parameter Value Unit
I
F(RMS)
RMS forward current
35 A
I
F(AV)
Average forward current
δ = 0.5
BYW81P Tc=115°C
15 A
BYW81PI/G Tc=90°C
15
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
200 A
Tstg
Tj
Storage and junction temperature range
-40to+150
-40to+150
°C
°C
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
K
A
K
A
K
NC
A
D2PAK
(Plastic)
BYW81G-200
BYW81P-200 / BYW81PI-200 / BYW81G-200
2/6
Symbol Test Conditions Min. Typ. Max. Unit
I
R
*
T
j
= 25°C VR=V
RRM
20 µA
T
j
= 100°C
1.5 mA
V
F**
Tj= 125°C IF=12A
0.85 V
T
j
= 125°C IF=25A
1.05
T
j
= 25°C IF=25A
1.15
Pulse test :
* tp = 5 ms, duty cycle<2%
** tp = 380 µs, duty cycle<2%
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
j
= 25°C IF= 0.5A
IR=1A
Irr = 0.25A 25 ns
I
F
=1A
VR= 30V
dIF/dt = -50A/µs40
tfr T
j
= 25°C IF=1A
VFR=1.1xV
F
tr=10ns 15 ns
V
FP
Tj= 25°C IF=1A tr=10ns 2 V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c)
Junction to case
BYW81P
2.0 °C/W
BYW81PI / G
3.5
THERMAL RESISTANCE
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