SGS Thomson Microelectronics BYW80PI-200 Datasheet
BYW80PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDPACKAGE:
Insulatingvoltage= 2500 V
Capacitance= 7 pF
DESCRIPTION
Single chip rectifier suited for switchmode power
supplyand highfrequencyDC to DC converters.
Packaged in Isolated TO220AC, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
RMS
A
K
isolated
TO220AC
(Plastic)
BYW80PI-200
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
RMSforward current
Averageforwardcurrent
Tc=110°C10 A
20 A
δ = 0.5
I
FSM
Tstg
Surgenon repetitiveforwardcurrent
Storageand junctiontemperaturerange
Tj
tp=10ms
sinusoidal
100 A
- 65 to+ 150
- 65 to+ 150
Symbol Parameter Value Unit
V
RRM
October 1999 Ed : 2C
Repetitivepeak reversevoltage
200 V
°C
°C
1/5
BYW80PI-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth(j-c)
Junctionto case
3.5 °C/W
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
I
*
R
V
F**
Pulse test : * tp = 5 ms, duty cycle < 2%
=25°CV
T
j
T
=100°C
j
Tj=125°CI
T
=125°CI
j
T
=25°CI
j
** tp = 380µs, duty cycle < 2 %
=V
R
RRM
=7A
F
=15A
F
=15A
F
10
1mA
0.85 V
1.05
1.15
To evaluatethe conductionlossesuse the following equation :
P = 0.65 x I
F(AV)
+0.027 x I
F2(RMS)
µ
A
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
2/5
=25°CI
j
=25°CI
j
Tj=25°CI
= 0.5A
F
I
=1A
R
=1A
I
F
=30V
V
R
=1A
F
V
=1.1 x V
FR
= 1A tr = 10 ns 2 V
F
Irr = 0.25A 25 ns
dI
/dt = -50A/µs35
F
tr=10ns 15 ns
F
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