SGS Thomson Microelectronics BYW80FP-200 Datasheet

®

BYW80F/FP-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCTS CHARACTERISTICS

I

F(AV)

V

RRM

20 A

200 V

Tj (max) 150°C

(max) 0.85 V

V

F

trr (max) 35 ns

FEATURES

Suited for SMPS

■

Very low forward losses

■

Negligible switching losses

■

■ High surge current capability

■ Insulated packages:

ISOWATT220AC / TO-220FPAC: Insulation voltage = 2000 V DC Capacitance = 12 pF

DESCRIPTION

Single chip rectifier suited for Switch Mode Power SuppliesandhighfrequencyDC to DCconverters.

Packaged in TO-220AC, ISOWATT220AC and TO-220FPAC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

K

TO-220AC

BYW80-200

A

ISOWATT220AC

BYW80F-200

TO-220FPAC

BYW80FP-200

A

K

A

K

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage RMS forward current Average forward current

δ = 0.5

TO-220AC Tc=120°C ISOWATT220AC

Tc=95°C

200 V

20 A 10 A

10

TO-220FPAC

I

FSM

Surge non repetitive forward current

tp=10ms

100 A

sinusoidal

Tstg

Tj

January 2002 - Ed: 3G

Storage and junction temperature range Maximum operating temperature range

- 65 to + 150 °C + 150 °C

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BYW80F/FP-200

THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-c)

Junction to case

TO-220AC ISOWATT220AC / TO-220FPAC

2.5 °C/W

4.7

ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

*

I

R

V

F**

Pulse test:*tp=5ms,duty cycle<2%

= 25°C VR=V

T

j

= 100°C

T

j

Tj= 125°C IF=7A T

= 125°C IF=15A

j

T

= 25°C IF=15A

j

** tp = 380 µs, duty cycle<2%

RRM

10 µA

1mA

0.85 V

1.05

1.15

To evaluate the conduction losses use the following equation : P=0.65xI

F(AV)

+ 0.027 x I

F2(RMS)

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr T

= 25°C IF= 0.5A

j

Irr = 0.25A 25 ns

IR=1A I

=1A

F

dIF/dt = -50A/µs35

VR= 30V

tfr T

V

FP

=25°CI

j

=1A

F

VFR=1.1xV

tr=10ns 15 ns

F

Tj= 25°C IF=1A tr=10ns 2 V

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BYW80F/FP-200

Fig. 1: Average forward power dissipation versus

average forward current

P

F(av)(W)

14

12

=0.05

=0.1

=0.2

=0.5

=1

10

8

6

T

4

2

0

01234567891011121314

I

F(av)(A)

=tp/T

tp

Fig. 3: Forward voltage drop versus forward current (maximum values)

VFM(V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100

Tj=125 C

o

IFM(A)

Fig. 2: Peak current versus form factor

I

M(A)

200

=tp/T

T

I

M

tp

175 150 125 100

75 50

P=10W

P=5W

P=15W

25

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Fig. 4: Relative variation of thermal impedance junctionto case versuspulse duration (TO-220AC)

K

1.0

Zth(j-c) (tp. )

K=

Rth(j-c)

0.5

0.2

0.1

=0.5

=0.2

=0.1

Single pulse

tp(s)

1.0E-03 1.0E-02 1.0E-01

=tp/T

T

tp

1.0E+00

Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration. (ISOWATT220AC / TO-220FPAC)

K

1

Zth(j-c) (tp. )

K=

Rth(j-c)

0.8

=0.5

0.6

0.4

=0.1

0.2

0

1.0E-03 1.0E-02 1.0E-01

=0.2

Single pulse

tp(s)

T

=tp/T

tp

1.0E+00 1.0E+01

Fig. 6: Non repetitive surge peak forward current versus overload duration (TO-220AC)

I

M(A)

100

90 80 70 60 50 40 30

IM

20 10

0

0.001 0.01 0.1 1

t =0.5

t(s)

o

Tc=25 C

Tc=75 C

o

Tc=120 C

o

3/7