SGS Thomson Microelectronics BYW80F-200, BYW80-200 Datasheet
BYW80(F)-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSION(ISOWATT220AC):
Insulatingvoltage= 2000 VDC
Capacitance= 12 pF
A
K
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supplyand highfrequencyDC to DC converters.
Packaged in TO-220AC, or ISOWATT220ACthis
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
TO-220AC
(Plastic)
isolated
ISOWATT220AC
(Plastic)
protectionapplications.
BYW80-200
BYW80F-200
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMSforward current
Averageforwardcurrent
δ = 0.5
TO-220AC Tc=120°C
ISOWATT220AC Tc=95°C
Surgenon repetitiveforwardcurrent
Storageand junctiontemperaturerange
tp=10ms
sinusoidal
20 A
10 A
10
100 A
- 65 to+ 150
- 65 to+ 150
A
°C
°
C
Symbol Parameter Value Unit
V
RRM
October 1999 - Ed: 2D
Repetitivepeak reversevoltage
200 V
1/6
BYW80(F)-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth(j-c)
Junctionto case
TO-220AC
ISOWATT220AC
2.5 °C/W
4.7
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
*
I
R
V
F**
Pulse test : * tp = 5 ms, duty cycle < 2 %
=25°CV
T
j
T
= 100°C
j
Tj= 125°CI
T
= 125°CI
j
T
=25°CI
j
** tp = 380 µs, duty cycle < 2 %
=V
R
RRM
=7A
F
=15A
F
=15A
F
10 µA
1mA
0.85 V
1.05
1.15
To evaluatethe conductionlossesuse thefollowing equation:
P = 0.65x I
F(AV)
+0.027 x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
2/6
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
=1A
I
R
I
=1A
F
V
=30V
R
=1A
F
=1.1 x V
V
FR
=1A tr = 10 ns 2 V
F
Irr = 0.25A 25 ns
/dt = -50A/µs35
dI
F
tr=10ns 15 ns
F
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