SGS Thomson Microelectronics BYW77PI-200, BYW77P-200 Datasheet
BYW77P/PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY
HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSION:
Insulatingvoltage= 2500 VDC
Capacitance= 12 pF
A
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supplyand highfrequencyDC to DC converters.
Packaged in SOD93, or DOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SOD93
(Plastic)
BYW77P-200
isolated
DOP3I
(Plastic)
BYW77PI-200
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMSforward current 50 A
Averageforwardcurrent
δ = 0.5
Surgenon repetitiveforwardcurrent
SOD93 Tc=125°C
TOP3I Tc=100°C
tp=10ms
sinusoidal
25 A
25
500 A
Storageand junctiontemperaturerange - 40 to+ 150
- 40 to+ 150
Symbol Parameter Value Unit
V
RRM
October 1999 Ed : 2C
Repetitivepeak reversevoltage 200 V
°
°C
C
1/5
BYW77P/PI-200
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth(j-c) Junctionto case
SOD93
DOP3I
1.0 °C/W
1.8
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
I
*T
R
V
F**
Pulse test : * tp = 5 ms, duty cycle < 2 %
=25°CV
j
T
= 100°C2.5mA
j
Tj= 125°CI
T
= 125°CI
j
T
=25°CI
j
** tp = 380µs, duty cycle < 2 %
=V
R
RRM
=20 A 0.85 V
F
=40 A 1.00
F
=40 A 1.15
F
25 µA
To evaluatethe conductionlossesusethefollowing equation:
P = 0.7x I
F(AV)
+ 0.0075x I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr T
tfr T
V
FP
2/5
=25°CI
j
=25°CI
j
Tj=25°CI
=0.5A
F
=1A
I
R
I
=1A
F
=30V
V
R
=1A
F
=1.1 x V
V
FR
=1A tr = 5 ns 1.5 V
F
Irr = 0.25A 35 ns
dI
/dt = -50A/µs50
F
tr = 5 ns 10 ns
F
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