SGS Thomson Microelectronics BYW77G-200 Datasheet
HIGH EFFICIENCY FAST RECOVERY DIODES
MAINPRODUCTCHARACTERISTICS
BYW77G-200
I
F(AV)
V
RRM
25 A
200 V
trr 50 ns
V
F
0.85 V
FEATURESAND BENEFITS
VERYSMALLCONDUCTIONLOSSES
NEGLIGIBLESWITCHINGLOSSES
LOW FORWARD AND REVERSE RECOVERY
TIME
HIGHSURGECURRENTCAPABILITY
SMD PACKAGE
DESCRIPTION
Singlerectifiersuited for switchmodepowersupply
andhigh frequencyDC to DCconverters.
Packagedin D
2
PAK, this surface mount device is
intended for usein high frequencyinverters, free
wheelingand polarityprotectionapplications.
1&3 4
4
1
2
PAK
D
(Plastic)
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reversevoltage 200 V
RMSforwardcurrent 50 A
Averageforward current Tc=125°C
25 A
δ = 0.5
I
FSM
Surgenon repetitiveforwardcurrent tp=10ms
200 A
sinusoidal
I
FRM
Repetitivepeak forwardcurrent tp = 5µs
310 A
f = 5 kHz
Tstg
Storageand junctiontemperaturerange - 40 to + 150
Tj
October 1999- Ed:3A
°
C
1/5
BYW77G-200
THERMALRESISTANCE
Symbol Parameter Value Unit
R
th (j-c)
Junctionto case 1 °C/W
STATICELECTRICALCHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
* Reverseleakage current VR=V
R
V
F**
Pulse test : * tp = 5 ms, δ <2%
Forwardvoltagedrop IF=20A Tj= 125°C 0.85 V
** tp = 380µs, δ<2%
RRM
I
=40A Tj= 125°C 1.00
F
I
=40A Tj=25°C 1.15
F
Tj=25°C25µA
= 100°C 2.5 mA
T
j
To evaluatethe conductionlossesuse thefollowingequation:
P = 0.65x I
F(AV)
+0.0075 I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Parameter TestConditions Min. Typ. Max. Unit
t
rr
Reverserecovery
time
Tj=25°CI
Irr= 0.25A I
= 0.5A
F
=1A
R
35 ns
t
fr
Forwardrecovery
time
V
FP
Peakforward
voltage
PIN OUT configurationin D
=25°CI
T
j
dI
/dt= -50A/µsVR=30V
F
Tj=25°CI
/dt= 100A/µs
dI
F
V
= 1.1 x VFmax
FR
Tj=25°CIF=1A
dI
/dt= 100A/µs 1.5
F
2
PAK:
=1A
F
=1A
F
50
ns
10
V
2/5
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