SGS Thomson Microelectronics BYW51R-200 Datasheet

®

BYW51/F/G/FP/R-200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

2x10A

200 V

Tj (max) 150 °C

(max) 0.85 V

V

F

trr (max) 25 ns

FEATURES AND BENEFITS

SUITED FOR SMPS

■

VERY LOW FORWARD LOSSES

■

NEGLIGIBLE SWITCHING LOSSES

■

HIGH SURGE CURRENT CAPABILITY

■

■ INSULATED PACKAGES (ISOWATT220AB /

TO-220FP) : Insulation voltage = 2000 V DC Capacitance = 12 pF

DESCRIPTION

Dual center tap rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, ISOWATT220AB, TO-220FP, D

2

PAK or I2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

A1

TO-220FPAB

BYW51FP-200

K

A2

A1

2

PAK

D

BYW51G-200

K

A1

I2PAK

BYW51R-200

A1

K

A2

K

A2

K

A1

TO-220AB

BYW51-200

A2

K

A1

ISOWATT220AB

BYW51F-200

A2

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

Repetitive peak reverse voltage RMS forward current Average forward current

δ = 0.5

I

FSM

Tstg

Tj

August 2002 - Ed: 3E

Surge non repetitive forward current tp=10ms sinusoidal Storage temperature range Maximum operating junction temperature

TO-220AB / D2PAK

2

PAK

I

Tc=120°C Perdiode

Per device

ISOWATT220AB Tc=95°C Per diode

Per device

TO-220FPAB

Tc=85°C

Per diode Per device

200 V

20 A 10 A 20 10 20 10 20

100 A

- 65 to + 150 °C 150 °C

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BYW51/F/G/FP/R-200

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-c)

th (c)

Junction to case

Coupling

TO-220AB / D2PAK/I2PAK Per diode

Total

ISOWATT220AB Per diode

Total

TO-220FPAB

Per diode Total

TO-220AB / D2PAK/I2PAK ISOWATT220AB TO-220FPAB

2.5 °C/W

1.4

5.1

4.05

5.7

4.6

0.25 °C/W

3.0

3.5

When diodes 1 and 2 are used simultaneously : ∆Tc (diode 1) = P(diode 1) x R

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS (Per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

R

Reverse leakage current T

*

= 25°C VR=V

j

T

= 100°C

j

RRM

15 µA

1mA

V

F**

Pulse test:*tp=5ms,δ<2%

Forward voltage drop Tj= 125°C IF=8A

** tp = 380 µs, δ <2%

Tj= 125°CI

=25°CI

T

j

=16A

F

=16A

F

0.85 V

1.05

1.15

To evaluate the conduction losses use the following equation : P=0.65xI

F(AV)

+ 0.025 x I

F2(RMS)

RECOVERY CHARACTERISTICS

Symbol Test Conditions Typ. Max. Unit

trr T

tfr T

V

FP

= 25°C IF= 0.5A

j

= 25°C IF=1A

j

=1A

I

R

=1A

I

F

= 30V

V

R

=1.1xVFmax

V

FR

Tj= 25°C IF=1A dIF/dt = -50A/µs2 V

Irr = 0.25A 25 ns

dI

/dt = -50A/µs35

F

dI

/dt = -50A/µs15 ns

F

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BYW51/F/G/FP/R-200

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

PF(av)(W)

14 12 10

8 6 4 2 0

0 1 2 3 4 5 6 7 8 9 10 11 12 13

Fig. 3-1: Average forward current versus ambient temperature (δ = 0.5, D

IF(av)(A)

12 10

8 6 4 2 0

0 25 50 75 100 125 150

δ

T

=tp/T

δ = 0.05

tp

δ = 0.1

δ = 0.2

IF(av) (A)

2

PAK, TO-220AB).

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

Tamb(°C)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig.2:Peak current versusform factor (perdiode).

IM(A)

120

T

100

80

P=10W

δ

=tp/T

tp

60 40

P=15W

P=5W

20

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

δ

Fig. 3-2: Average forward current versus ambient temperature (δ = 0.5, ISOWATT220AB, TO-220FPAB).

IF(av)(A)

12 10

8 6 4 2

=tp/T

δ

0

0 25 50 75 100 125 150

Rth(j-a)=Rth(j-c)

TO-220FP

Rth(j-a)=15°C/W

T

tp

Tamb(°C)

ISOWATT220AB

Fig. 4-1:Non repetitive surge peakforwardcurrent versus overload duration (D

2

PAK, TO-220AB)

IM(A)

100

90 80 70 60 50 40 30

IM

20 10

0 1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=100°C

Fig. 4-2:Non repetitive surge peakforwardcurrent versus overload duration (ISOWATT220AB).

IM(A)

80 70 60 50 40 30 20

IM

10

0 1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

Tc=25°C

Tc=75°C

Tc=100°C

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