SGS Thomson Microelectronics BYW51G-200, BYW51FP-200, BYW51F-200, BYW51-200 Datasheet
BYW51/F/G/FP-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2 x 10 A
200 V
Tj (max) 150 °C
VF(max) 0.85 V
trr (max) 25 ns
FEATURES AND BENEFITS
n SUITED FOR SMPS
n VERY LOW FORWARD LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n HIGH SURGE CURRENT CAPABILITY
n INSULATED PACKAGES (ISOWATT220AB /
TO-220FP) :
Insulation voltage = 2500 V
(RMS)
Capacitance = 12 pF
DESCRIPTION
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FP or D2PAK, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
A1
TO-220AB
BYW51-200
PRELIMINARY DATASHEET
A1
A2
D2PAK
BYW51G-200
A2
K
ISOWATT220AB
BYW51F-200
A1
K
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
March 2000 - Ed: 3A
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ = 0.5
TO-220AB/D2PAK Tc=120°C Per diode
Per device
ISOWATT220AB Tc=95°C Per diode
Per device
TO-220FP
Tc=85°C
Per diode
Per device
Surge non repetitive forward current tp=10ms sinusoidal
Storage temperature range
Maximum operating junction temperature
200 V
20 A
10 A
20
10
20
10
20
100 A
- 65 to + 150 °C
150 °C
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