SGS Thomson Microelectronics BYW29G-200 Datasheet



HIGH EFFICIENCY FAST RECOVERY DIODES

MAINPRODUCTCHARACTERISTICS

BYW29G-200

I

F(AV)

V

RRM

8A

200 V
trr 35 ns
V

F

0.85V

FEATURESAND BENEFITS

VERYSMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY

TIMES
HIGHSURGECURRENT
SMD

DESCRIPTION

Singlerectifiersuited forswitchmodepowersupply
and high frequencyDC to DCconverters.
PackagedinasurfacemountpackageD

2

PAK,this
device is intended for use in high frequency in­verters,freewheelingandpolarityprotectionappli­cations.

AK

K

NC

2

PAK

D

(Plastic)

A

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

FRM

Repetitivepeak reversevoltage 200 V
RMSforwardcurrent 16 A
Averageforwardcurrent Tc=120°C

δ

=0.5

Surgenon repetitiveforwardcurrent
(Allpins connected)

tp=10ms
sinusoidal

Repetitivepeak forwardcurrent tp = 5 µs

8A

80 A

75 A

f = 5 kHz

Tstg

Storageand junctiontemperaturerange - 40 to+ 150 °C

Tj

October 1999 - Ed: 2

1/5

BYW29G-200

THERMALRESISTANCE

Symbol Parameter Value Unit

Rth (j-c) Junctionto casethermal resistance 2.8

STATICELECTRICALCHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

* Reverseleakagecurrent VR=V

R

V

F**

Pulse test : * tp = 5 ms, duty cycle < 2 %

Forwardvoltage drop IF=5A Tj= 125°C 0.85 V

** tp = 380 µs, dutycycle< 2 %

RRM

=10A Tj= 125°C 1.05

I

F

=10A Tj=25°C 1.15

I

F

Tj=25°C10
T

= 100°C 0.6 mA

j

To evaluatethe conductionlossesuse thefollowingequation:
P = 0.65x I

F(AV)

+0.040I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol Parameter TestConditions Min. Typ. Max. Unit

°

C/W

µ

A

t

rr

Reverserecovery
time

t

fr

Forwardrecovery
time

V

FP

Peakforward
voltage

PIN OUTconfigurationin D

Tj=25°CI
Irr = 0.25A I

T

=25°CI

j

/dt = -50A/µsV

dI

F

Tj=25°CI

/dt = 100A/µs

dI

F

= 1.1 x VFmax

V

FR

Tj=25°CIF=1A

/dt = 100A/µs2

dI

F

2

PAK:

= 0.5A

F

=1A

R

=1A

F

=

30V

R

=1A

F

25 ns

35

ns

15

V

2/5