SGS Thomson Microelectronics BYV54V-200, BYV541V-200 Datasheet

BYV54V



BYV541V

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

n SUITED FOR SMPS
n VERY LOWFORWARD LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n HIGH SURGE CURRENT CAPABILITY
n HIGH AVALANCHE ENERGY CAPABILITY
n INSULATED :

Insulating voltage = 2500 V

RMS

Capacitance = 45 pF

DESCRIPTION

Dual rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in ISOTOPTMthis device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.

K2 A2

A1K1

BYV541V-200

ISOTOP

(Plastic)

A2 K1

BYV54V-200

A1K2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV)

I

FSM

RMS forward current
Average forward current δ = 0.5
Surge non repetitive forward current

Per diode
Tc=90°C Per diode
tp=10ms

Per diode

100 A

50 A

1000 A

sinusoidal

Tstg

Tj

Storage and junction temperature range

-40to+
150

- 40 to+ 150

Symbol Parameter BYV54V / BYV541V Unit

V

RRM

Repetitive peak reverse voltage

200 V

ISOTOP is a trademark of STMicroelectronics.

May 2000 - Ed : 2E

°C
°C

1/5

BYV54V / BYV541V

THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth (j-c)

Rth (c)

Junction to case

Coupling

Per diode
Total

1.2 °C/W

0.85

0.1 °C/W

When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

IR*

V

F**

Tj=25°CV

=V

R

RRM

Tj= 100°C

Tj= 125°CI

Tj= 125°CI

=50A

F

= 100 A

F

50 µA

5mA

0.85 V

1.00

Tj=25°CI

Pulse test :
* tp = 5 ms, duty cycle < 2%

** tp = 380 µs, duty cycle< 2 %

= 100 A

F

1.15

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr Tj=25°CI

= 0.5A

F

Irr = 0.25A 40 ns

IR=1A

IF=1A

dIF/dt = -50A/µs60

VR= 30V

tfr Tj=25°CI

V

FP

Tj=25°CI

=1A

F

VFR= 1.1 x V

= 1A tr = 5ns 1.5 V

F

tr = 5ns 10 ns

F

2/5