SGS Thomson Microelectronics BYV52PI-200, BYV52-200 Datasheet

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BYV52/PI

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

FEATURES

SUITEDFOR SMPS
VERYLOWFORWARD LOSSES
NEGLIGIBLESWITCHINGLOSSES
HIGHSURGE CURRENT CAPABILITY

A1

K

A2

HIGHAVALANCHEENERGYCAPABILITY
INSULATEDVERSIONTOP3I:

Insulatingvoltage= 2500 VDC
Capacitance= 12 pF

DESCRIPTION

Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.

SOT93

(Plastic)

BYV52-200

isolated

TOP3I

(Plastic)

BYV52PI-200

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

I

F(RMS)

I

F(AV) Averageforwardcurrent

RMSforward current

δ = 0.5

I

FSM

Tstg

Surgenon repetitiveforwardcurrent

Storageand junctiontemperaturerange

Tj

Per diode

SOT93 Tc=110°C Per diode
TOP3I Tc=90°C Per diode

tp=10ms
sinusoidal

Per diode

50 A
30 A

30

500 A

- 40 to + 150

- 40 to + 150

Symbol Parameter Value Unit

V

RRM

October 1999 Ed : 2C

Repetitivepeak reversevoltage

200 V

°C
°

C

1/6

BYV52/PI

THERMALRESISTANCE

Symbol Parameter Value Unit

Rth (j-c)

Rth (c)

Junctionto case

Coupling

SOT93 Perdiode

Total

TOP3I Perdiode

Total

SOT93

TOP3I

1.2

0.75

1.8

1.2

0.3 °C/W

0.6

Whenthe diodes1 and 2 are used simultaneously:
Tj-Tc(diode 1) = P(diode1) x Rth(j-c)(Perdiode) + P(diode 2) x Rth(c)

ELECTRICAL CHARACTERISTICS(Per diode)
STATICCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

*

I

R

V

F**

T

=25°CV

j

= 100°C

T

j

Tj= 125°CI

=V

R

RRM

=20A

F

25

2.5 mA

0.85 V

°

C/W

µ

A

T

= 125°CI

j

T

=25°CI

j

Pulse test : * tp = 5 ms, duty cycle < 2%

** tp = 380µs, duty cycle < 2 %

=40A

F

=40A

F

1.00

1.15

To evaluatethe conductionlossesuse thefollowing equation:
P = 0.7x I

F(AV)

+ 0.0075x I

F2(RMS)

RECOVERYCHARACTERISTICS

Symbol TestConditions Min. Typ. Max. Unit

trr T

tfr T

V

FP

=25°CI

j

=25°CI

j

Tj=25°CI

= 0.5A

F

I

=1A

R

=1A

I

F

= 30V

V

R

=1A

F

=1.1 x V

V

FR

= 1A tr = 5 ns 1.5 V

F

Irr = 0.25A 35 ns

dI

/dt = -50A/µs50

F

tr = 5 ns 10 ns

F

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