SGS Thomson Microelectronics BYV255V-200 Datasheet
BYV255V
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
n SUITED FOR SMPS
n VERY LOW FORWARD LOSSES
n NEGLIGIBLE SWITCHINGLOSSES
n HIGH SURGECURRENT CAPABILITY
n HIGH AVALANCHEENERGY CAPABILITY
n INSULATED :
Insulating voltage =2500 V
RMS
Capacitance =55 pF
DESCRIPTION
Dual rectifier suited for switchmode power supply
and high frequency DCto DC converters.
Packaged in ISOTOPTMthis device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protectionapplications.
ABSOLUTE MAXIMUM RATINGS
K2 A2
A1K1
ISOTOP
(Plastic)
Symbol Parameter Value Unit
I
F(RMS)
I
F(AV)
I
FSM
RMS forward current
Average forward current δ = 0.5
Surge non repetitive forward current
Per diode
Tc=110°C Per diode
tp=10ms
Per diode
150 A
100 A
1600 A
sinusoidal
Tstg
Tj
Storage and junction temperature range
-40to+
150
- 40 to + 150
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
ISOTOP is a trademark of STMicroelectronics.
May 2000 - Ed : 2E
°C
°C
1/5
BYV255V
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-c)
Rth (c)
Junction to case
Coupling
Per diode
Total
0.4 °C/W
0.25
0.1 °C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) xRth(c)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
IR*
Tj=25°CV
Tj= 100°C
V
F**
Tj= 125°CI
Tj= 125°CI
Tj=25°CI
Pulse test : * tp = 5ms, duty cycle < 2%
** tp = 380 µs, duty cycle< 2%
=V
R
RRM
= 100 A
F
= 200 A
F
= 200 A
F
100 µA
10 mA
0.85 V
1.00
1.15
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj=25°CI
= 0.5A
F
Irr = 0.25A 55 ns
IR=1A
IF=1A
dIF/dt = -50A/µs80
VR= 30V
tfr Tj=25°CI
V
FP
Tj=25°CI
=1A
F
VFR= 1.1 x V
= 1A tr = 5 ns 1.5 V
F
tr = 5 ns 10 ns
F
TURN-OFF SWITCHING CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
I
RM
Tj= 100°CI
= 100A
F
dIF/dt = -200A/µs16A
Lp 0.05µH
Vcc 0.6 V
RRM
dIF/dt = -400A/µs24
2/5
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