®
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery
time, intended for low voltage switching mode
power supply, polarity protection and high frequency circuits.
BYV 10-60
DO 41
(Glass)
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
stg
T
T
L
Repetitive Peak Reverse Voltage 60 V
Average Forward Current*
Surge non Repetitive Forward Current
= 25
T
amb
= 25°C
T
amb
= 10ms
t
p
= 25°C
T
amb
= 300µs
t
p
C
°
Rectangular Pulse
1A
20
Sinusoidal Pulse
40
Storage and Junction Temperature Range - 65 to + 150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
- 65 to + 125
230
from Case
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infinite heatsink with 4mm lead length
Junction-ambient* 110
C/W
°
A
C
°
C
°
C
°
August 1999 Ed: 1A
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BYV 10-60
ELECTRICAL CHARACT E RISTI CS
ST ATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
*
I
R
VF *I
= 25°C
T
j
= 100°C
T
j
= 1A
F
I
= 3A 1
F
V
= V
R
= 25°C
T
j
RRM
0.5 mA
10
0.7 V
DYNAMIC CHARACT ERIS TICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* Pulse test: t
= 25°C VR = 0
T
j
T
= 25°C VR = 5V
j
300µs δ < 2%
≤
p
.
Forward current flow in a schottky rectifier is due to
majority carrier conduction. So reverse recovery is
not affected by stored charge as in c onventional PN
junction diodes.
Nevertheless, when the device switches from forward biased condition to reverse blocking state,
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit behaviour analysis may be performed assuming that
schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction
capacitance (see fig. 5 page 4/4).
150 pF
40
current is required to charge the depletion capacitance of the diode.
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
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