SGS Thomson Microelectronics BYV10-60 Datasheet

®
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
Metal to silicon rectifier diode in glass case featu­ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­quency circuits.
BYV 10-60
DO 41
(Glass)
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
stg
T
T
L
Repetitive Peak Reverse Voltage 60 V Average Forward Current* Surge non Repetitive Forward Current
= 25
T
amb
= 25°C
T
amb
= 10ms
t
p
= 25°C
T
amb
= 300µs
t
p
C
°
Rectangular Pulse
1A
20
Sinusoidal Pulse
40
Storage and Junction Temperature Range - 65 to + 150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
- 65 to + 125 230
from Case
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infinite heatsink with 4mm lead length
Junction-ambient* 110
C/W
°
A
C
°
C
°
C
°
August 1999 Ed: 1A
1/4
BYV 10-60
ELECTRICAL CHARACT E RISTI CS
ST ATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
*
I
R
VF *I
= 25°C
T
j
= 100°C
T
j
= 1A
F
I
= 3A 1
F
V
= V
R
= 25°C
T
j
RRM
0.5 mA 10
0.7 V
DYNAMIC CHARACT ERIS TICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* Pulse test: t
= 25°C VR = 0
T
j
T
= 25°C VR = 5V
j
300µs δ < 2%
p
.
Forward current flow in a schottky rectifier is due to majority carrier conduction. So reverse recovery is not affected by stored charge as in c onventional PN junction diodes.
Nevertheless, when the device switches from for­ward biased condition to reverse blocking state,
This current depends only of diode capacitance and external circuit impedance. Satisfactory circuit be­haviour analysis may be performed assuming that schottky rectifier consists of an ideal diode in paral­lel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4).
150 pF
40
current is required to charge the depletion capaci­tance of the diode.
Figure 1. Forward current versus forward voltage at low level (typical values).
Figure 2. Forward current versus forward voltage at high level (typical values).
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