SGS Thomson Microelectronics BYT71F-800, BYT71F-600, BYT71-800, BYT71-600 Datasheet
BYT71(F)-800
August 1998 Ed : 3A
FASTRECOVERY RECTIFIERDIODES
Symbol Parameter Value Unit
I
F(RMS)
RMS on-state current 12 A
I
F(AV)
Average forward current
δ = 0.5
TO220AC Tc=130°C6 A
ISOWATT220AC Tc=105°C6
I
FSM
Surge non repetitive forward current tp=10ms
sinusoidal
90 A
Tstg
Tj
Storage and junction temperature range - 65 to + 150
- 65 to + 150
°C
°C
TO220AC
(Plastic)
K
A
.
HIGHVOLTAGECAPABILITY
.
FASTANDSOFT RECOVERY
.
INSULATEDPACKAGE:
insulatingvoltage= 2000V
DC
capacitance= 12 pF
DESCRIPTION
Symbol Parameter BYT71-(F) Unit
600 800
V
RRM
Repetitive peak off-state voltage 600 800 V
ABSOLUTEMAXIMUM RATINGS
FEATURES
Single chip rectifier suited for power conversion
and polarity protection applications.
This device is packaged in TO220AC and in
ISOWATT220AC.
ISOWATT220AC
(Plastic)
K
A
1/7
Symbol Test Conditions Min. Typ. Max. Unit
IR** Tj=25°CV
R
=V
RRM
20 µA
Tj= 100°C 1mA
VF*Tj= 100°CI
F
= 6 A 1.3 V
Tj=25°CI
F
= 6 A 1.4
Pulse test : * tp = 380 µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
THERMALRESISTANCES
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj=25°CI
F
=1A
VR= 30V
dIF/dt = -15A/µs 300 ns
To evaluate the conduction losses use the following equations :
P = 1.15 x I
F(AV)
+ 0.025 x I
F2(RMS)
Symbol Parameter Value Unit
Rth (j-c) Junction to case TO220AC 2.3 °C/W
ISOWATT220AC 4.9
BY T 71(F)-800
2/7
I
M(A)
P=5W
P=7.5W
P=10W
T
I
M
=tp/T
tp
Fig.2 : Peak current versus form factor.
V
FM(V)
Tj=100 C
O
FM(A)
I
Fig.3 : Forward voltage drop versus forward current
(maximum values).
K=Zth(j-c)/Rth(j-c)
SINGLE PULSE
=0.5
=0.2
=0.1
T
=tp/T
tp
Fig.4 : Relative variation of thermal impedance junction
to case versus pulse duration.
(TO 220 AC)
P
F(av)(W)
=0.5
=0.05
=0.1
=0.2
=1
T
=tp/T
tp
I
F(av)(A)
Fig.1 : Average forward power dissipation versus
average forward current.
K=Zth(j-c)/Rth(j-c)
=0.5
=0.2
=0.1
SINGLE PULSE
T
=tp/T
tp
tp(s)
Fig.5 : Relative variation of thermal impedance junction
to case versus pulse duration.
(ISOWATT220AC)
BYT71(F)-800
3/7
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