SGS Thomson Microelectronics BYT60P-1000, BYT261PIV-1000 Datasheet

BYT60P-1000



FAST RECOVERY RECTIFIERDIODES

MAJORPRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

(max) 1.8 V

V

F

trr(max) 70 ns

FEATURESAND BENEFITS

VERYLOWREVERSERECOVERYTIME VERYLOWSWITCHINGLOSSES LOWNOISETURN-OFF SWITCHING INSULATEDPACKAGE: ISOTOP

Insulationvoltage:2500V Capacitance= 45pF Inductance< 5 nH

DESCRIPTION

2 x 60 A

1000 V

RMS

BYT261PIV-1000

K2 A2

A1K1

BYT261PIV-1000

ISOTOP

(Plastic)

TM

Dual or highsinglevoltage rectifier devices suited for Switch Mode Power Supplies and other power converters.

These devices are packaged in ISOTOP or in SOD93.

A

K

SOD93

(Plastic)

ABSOLUTE RATINGS

(limitingvalues,per diode)

Symbol Parameter Value Unit

V

RRM

I

FRM

I

F(RMS)

I

F(AV)

I

FSM

T

stg

Tj

Repetitivepeak reversevoltage Repetitivepeak forwardcurrent tp=5µs F=1kHz RMSforward current ISOTOP

SOD93

Averageforwardcurrent δ =0.5 Tc= 50°C ISOTOP

Tc= 60°C SOD93 Surgenon repetitiveforwardcurrent tp = 10ms Sinusoidal Storagetemperaturerange Maximumoperating junctiontemperature

1000 V 1000 A

140 A 100

60 A 60

400 A

- 40 to + 150 °C 150 °C

TM: ISOTOP is a registeredtrademark of STMicroelectronics.

October 1999 - Ed: 4B

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BYT60P-1000 / BYT261PIV-1000

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junctionto case ISOTOP Per diode

Total

SOD93 Total

Coupling

0.8

0.45

0.7

0.1 °C/W

Whenthe diodes1 and 2 are usedsimultaneously: ∆ Tj(diode1) = P(diode)x R

(Perdiode) + P(diode2) x R

th(j-c)

th(c)

STATICELECTRICAL CHARACTERISTICS(per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

*

F

I

R

Forward voltagedrop Tj = 25°CI

**

Reverseleakage current

Pulse test : * tp = 380µs,δ<2%

** tp = 5 ms,δ<2%

=60A

F

Tj = 100°C Tj = 25°CV

R=VRRM

Tj = 100°C

1.9 V

1.8

100 µA

°C/W

6mA

To evaluatethe conductionlossesuse the following equation: P = 1.47 x I

F(AV)

+0.005 I

F2(RMS)

RECOVERYCHARACTERISTICS(per diode)

Symbol Test Conditions Min. Typ. Max. Unit

t

rr

Tj=25°CIF=1A VR=30V dIF/dt = - 15A/µs

I

= 0.5A IR=1A Irr=0.25A

F

170 ns

70

TURN-OFFSWITCHINGCHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

C=

IRM

I

RM

V

Max imu m rev er se reco ve ry time

Max imu m rev er se reco ve ry curr ent

Turn-off overvoltage

RP

coefficient

CC

dIF/dt = - 240 A/µsV

/dt = - 480 A/µs

dI

F

dIF/dt = - 240 A/µs dI

/dt = - 480 A/µs

F

= 200V

CC

I

=60A

F

≤0.05 µH

L

p

Tj = 100°C (seefig. 13)

Tj = 100°CVCC= 200V IF=I dIF/dt = - 60A/µsLp= 2.5µH (see fig. 14)

F(AV)

200 ns

120

40 A

44

3.3 4.5 /

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BYT60P-1000 / BYT261PIV-1000

Fig. 1-1: Average forward power dissipation

versus average forward current (per diode, ISOTOP).

PF(av)(W)

130 120 110

δ = 0.05

δ = 0.2δ = 0.1

δ= 0.5

100

90

δ =1

80 70 60 50 40 30 20 10

0

0 10203040506070

Fig. 2-1:

Peak current versus form factor (per

IF(av)(A)

δ

=tp/T

T

tp

diode,ISOTOP).

IM(A)

500 450 400 350

P=70W

300 250 200 150

P=40W

P=100W

100

P=20W

50

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

δ

=tp/T

T

tp

Fig. 1-2: Average forward power dissipation versusaverageforward current(SOD93).

PF(av)(W)

130 120 110

δ = 0.1

δ = 0.2

100

90 80

δ = 0.05

70 60 50 40 30 20 10

0

0 10203040506070

Fig.2-2:

500 450 400 350 300 250 200 150 100

50

0

Peakcurrentversusformfactor(SOD93).

IM(A)

P=70W

P=40W

P=20W

δ

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

IF(av)(A)

P=100W

δ= 0.5

δ

=tp/T

δ =1

T

tp

T

tp

Fig. 3:

Average forward current versus ambient

temperature(δ=0.5, per diodefor ISOTOP).

IF(av)(A)

70

Rth(j-a)=Rth(j-c)

60 50

ISOTOP

40 30 20 10

=tp/T

δ

0

0 25 50 75 100 125 150

Rth(j-a)=2.5°C/W

T

tp

SOD93

Tamb(°C)

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