SGS Thomson Microelectronics BYT3400B-TR Datasheet
BYT3400B(-TR)
®
October 1999 - Ed : 1C
FAST RECOV ERY REC T IFI ER DIO D E
I
F(AV)
3 A
V
RRM
400 V
V
F
(max) 1.4 V
MAIN PRODUCT CHARACTERISTIC S
VERY LOW REVERS E RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
SURFACE M OUNT P A CKAG E
TAPE AND REEL OPTION : -TR
FEATURES AND BENEFITS
Single high voltage rectifier suited to Switch Mode
Power Supplies and other power converters.
DESCR IPT ION
DPAK
(Plastic)
4
3
2
1 (nc)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
RMS forward current 10 A
I
F(AV)
Average forward current Tcase = ° C δ = 0.5 3 A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A
Tstg Storage temperature range - 40 to + 150
°
C
Tj Maximum junction temperature 150 °C
ABSOLUTE MAXIMUM RATINGS
3
2, 4 (Tab)
Symbol Parameter Value Unit
R
TH (j-c)
Junction to case TBD
°
C/W
THERMAL RE SISTA NC ES
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
I
R
* Reverse leakage current Tj = 25°CV
R
= V
RRM
20
µ
A
Tj = 100°C0.5mA
V
F
** Forward voltage drop Tj = 25°CI
F
= 3 A 1.5 V
Tj = 100°CI
F
= 3 A 1.4
STATIC ELECTRICAL CHARACTER ISTICS
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
1/3
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25°C IF = 0.5A
I
R
= 1A
Irr = 0.25A 25 ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -15 A/µs60ns
RECOVERY CHARACTE RISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
IRM
Vcc = 200V
Tj = 100°C
IF = 3A
dI
F
/dt = -50 A/µs
Lp ≤ 0.05µH3550ns
I
RM
1.5 2 A
To evaluate the maximum conduction losses use the following equation :
P = 1.1 x I
F(AV)
+ 0.08 I
F2(RMS)
TURN-OFF SWITCHING CHARACTERISTICS
BYT3400B(- TR)
2/3
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