SGS Thomson Microelectronics BYT30PI-400 Datasheet

®
BYT 30PI- 400
F AST RECOVERY RECTIFIER DIODES
VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSS ES
Insulating voltage 2500 V
RMS
LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF
SUITABLE A P PL ICATION S
Isolated
DOP3I
(Plastic)
RECTIFIER IN S.M.P.S.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
I
FRM
I
F (RMS)
I
F (AV)
I
FSM
Repetive Peak Forward Current RMS Forward Current 50 A Average Forward Current Tc = 60°C
Surge non Repetitive Forward Current tp = 10ms
(limiting values)
≤ 10µs
t
p
= 0.5
δ
Sinusoidal
500 A
30 A
350 A
P Power Dissipation
T
stg
T
Symbol Parameter Value Unit
V
RRM
V
RSM
Storage and Junction Temperature Range - 40 to + 150
j
Repetitive Peak Reverse Voltage 400 V Non Repetitive Peak Reverse Voltage 440 V
T
= 60°C
c
50 W
- 40 to + 150
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j - c)
October 1999 Ed : 1A
Junction-case 1.8
°
C/W
°
C
1/5
BYT 30PI-400
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
V
I
R
V
F
Tj = 25°C
= 100°C
T
j
T
= 25°C
j
= 100°C
T
j
= V
R
RRM
6mA I
= 30A 1.5
F
1.4
RECOVERY CHA RAC TERISTI CS
Symbol Test Conditions Min. Typ. Max. Unit
35
A
µ
V
t
rr
I
Tj = 25°CI
= 1A diF/dt = - 15A/µs VR = 30V
F
= 0.5A IR = 1A Irr = 0.25A 50
F
100
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol Test Conditions Min. Typ. Max. Unit
t
IRM
I
RM
diF/dt = - 120A/µs
/dt = - 240A/µs
di
F
diF/dt = -120A/µs
/dt = - 240A/µs
di
F
V
= 200 V IF = 30A
CC
L
0.05µH T
p
See figure 11
= 100°C
j
75 ns 50 9A 12
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol Test Conditions Min. Typ. Max. Unit
V
C =
RP
Tj = 100°C VCC = 60V IF = I
/dt = - 30A/µs Lp = 1µH See figure 12
di
V
CC
F
See note
F (AV)
3.3
To evaluate the conduction losses use the following equations: V
= 1.1 + 0.0095 IF P = 1.1 x I
F
Figure 1. Low frequency power losses versus
+ 0.0095 I
F(AV)
F2(RMS)
Figure 2. Peak current versus form factor
average current
ns
2/5
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