SGS Thomson Microelectronics BYT30PI-1000 Datasheet
FASTRECOVERY RECTIFIER DIODE
VERYHIGHREVERSEVOLTAGECAPABILITY
VERYLOW REVERSE RECOVERYTIME
VERYLOW SWITCHING LOSSES
LOW NOISETURN-OFF SWITCHING
INSULATED:Capacitance 15pF
SUITABLEAPPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
AND MOTORCONTROL CIRCUITS
RECTIFIERIN S.M.P.S.
BYT 30PI-1000
Insulating voltage2500 V
Isolated
DOP3I
(Plastic)
RSM
A
K
ABSOLUTE MAXIMUMRATINGS(limiting values)
Symbol Parameter Value Unit
V
RRM
V
RSM
I
FRM
I
F (RMS)
I
F(AV)
I
FSM
P Power Dissipation T
T
stg
T
Repetitive Peak Reverse Voltage 1000 V
Non RepetitivePeak Reverse Voltage 1000 V
Repetive Peak Forward Current
RMS Forward Current 70 A
Average Forward Current Tc=50°C
Surge non Repetitive Forward Current tp= 10ms
Storage and Junction TemperatureRange - 40 to +150
j
s
t
≤10µ
p
= 0.5
δ
Sinusoidal
=50°C60W
c
375 A
30 A
200 A
THERMALRESISTANCE
Symbol Parameter Value Unit
R
th (j - c)
Junction-case 1.6
°
C/W
°
C
October 1999 - Ed:2A 1/5
BYT 30PI-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
I
R
V
F
Tj=25°C
T
= 100°C 5mA
j
Tj=25°C
T
= 100°C
j
V
R=VRRM
I
= 30A 1.9
F
100
1.8
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj=25°CI
=1A diF/dt = - 15A/µsVR= 30V
F
I
= 0.5A IR=1A Irr= 0.25A 70
F
165
TURN-OFF SWITCHING CHARACTERISTICS(Without Series Inductance)
Symbol Test Conditions Min. Typ. Max. Unit
V
t
I
IRM
RM
diF/dt = - 120A/µs
di
/dt = - 240A/µs
F
diF/dt = -120A/µs
/dt = - 240A/µs
di
F
= 200V IF= 30A
CC
L
0.05µHT
≤
p
See figure11
= 100°C
j
TURN-OFF OVERVOLTAGECOEFFICIENT(With SeriesInductance
120
)
200 ns
19.5 A
22
µA
V
ns
Symbol Test Conditions Min. Typ. Max. Unit
V
RP
C=
Tj= 100°CV
V
diF/dt = - 30A/µsLp=5µH See figure12
CC
= 200V IF=I
CC
F(AV)
4.5
To evaluatethe conductionlosses use thefollowing equations:
V
= 1.47+ 0.010 I
F
F
Figure1. Low frequency power losses versus
P =1.47 x I
F(AV)
+ 0.010I
F2(RMS)
Figure2. Peak currentversus form factor
average current
2/5
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