SGS Thomson Microelectronics BYT30P-400 Datasheet
BYT 30P- 400
FASTRECOVERY RECTIFIER DIODES
VERYLOWREVERSERECOVERYTIME
VERYLOW SWITCHING LOSSES
Cathode connected to case
LOW NOISETURN-OFF SWITCHING
A
K
SUITABLEAPPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
SOD93
(Plastic)
AND MOTORCONTROL CIRCUITS
RECTIFIERIN S.M.P.S.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
I
FRM
I
F (RMS)
I
F(AV)
I
FSM
Repetive Peak Forward Current
RMS Forward Current 50 A
Average Forward Current Tc= 100°C
Surge non RepetitiveForward Current tp= 10ms
(limiting values)
≤ 10µs
t
p
= 0.5
δ
Sinusoidal
500 A
30 A
350 A
P Power Dissipation T
T
stg
T
Symbol Parameter Value Unit
V
RRM
V
RSM
Storage and Junction TemperatureRange - 40 to + 150
j
Repetitive Peak Reverse Voltage 400 V
Non Repetitive Peak Reverse Voltage 440 V
= 100°C50W
c
- 40 to + 150
THERMALRESISTANCE
Symbol Parameter Value Unit
R
th (j - c)
October 1999 Ed :1A
Junction-case 1
°
C/W
°
C
1/5
BYT 30P-400
ELECTRICAL CHARACTERISTICS
STATICCHARACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
I
R
V
F
Tj=25°C
T
= 100°C 6mA
j
T
=25°C
j
T
= 100°C
j
V
R=VRRM
I
= 30A 1.5
F
35
1.4
RECOVERYCHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj=25°CI
=1A diF/dt = - 15A/µsVR= 30V
F
I
= 0.5A IR=1A Irr= 0.25A 50
F
100
TURN-OFF SWITCHINGCHARACTERISTICS (Without SeriesInductance)
Symbol Test Conditions Min. Typ. Max. Unit
t
I
IRM
RM
diF/dt = - 120A/µs
/dt = - 240A/µs
di
F
diF/dt = -120A/µs
di
/dt = - 240A/µs
F
= 200 V IF= 30A
V
CC
L
≤ 0.05µHTj= 100°C
p
See figure 11
75 ns
50
9A
12
TURN-OFF OVERVOLTAGECOEFFICIENT(With Series Inductance)
Symbol Test Conditions Min. Typ. Max. Unit
V
RP
C=
Tj= 100°CV
V
diF/dt = - 30A/µsLp=1µH See figure 12
CC
= 60V IF=I
CC
F(AV)
3.3
µA
V
ns
To evaluatethe conductionlosses use thefollowing equations:
= 1.1 + 0.0095I
V
F
F
Figure1. Lowfrequencypowerlosses versus
P = 1.1 x I
F(AV)
+ 0.0095 I
Figure 2. Peak current versus form factor
F2(RMS)
average current
2/5
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