SGS Thomson Microelectronics BYT30G-400 Datasheet
HIGH EFFICIENCY FAST RECOVERY DIODES
MAINPRODUCTCHARACTERISTICS
BYT30G-400
I
F(AV)
V
RRM
30 A
400 V
trr 50 ns
V
F
1.4 V
FEATURESAND BENEFITS
VERYLOWREVERSE RECOVERYTIME
VERYLOWSWITCHINGLOSSES
LOWNOISE TURN-OFFSWITCHING
SMDPACKAGE
DESCRIPTION
Single rectifier suited for freewheelingin convertersand motor control circuits.
Packagedin D
2
PAK, this surface mount device is
intended for usein high frequencyinverters,free
wheelingand polarityprotectionapplications.
1&3 4
4
1
2
PAK
D
(Plastic)
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reversevoltage 400 V
RMSforwardcurrent 50 A
Averageforwardcurrent Tc=100°C
30 A
δ =0.5
I
FSM
Surgenon repetitiveforwardcurrent tp=10ms
350 A
sinusoidal
I
FRM
Repetitivepeak forwardcurrent tp = 5µs
280 A
f = 5 kHz
Tstg
Storageand junctiontemperaturerange - 40 to+ 150
Tj
October 1999 - Ed: 3A
°
C
1/5
BYT30G-400
THERMALRESISTANCE
Symbol Parameter Value Unit
Rth (j-c) Junctionto case 1 °C/W
STATICELECTRICALCHARACTERISTICS
Symbol Parameter TestConditions Min. Typ. Max. Unit
I
* Reverseleakagecurrent VR=V
R
V
F**
Pulse test : * tp = 5 ms, δ<2%
Forwardvoltagedrop IF=30A Tj=100°C 1.4 V
** tp = 380µs,δ<2%
RRM
I
=30A Tj=25°C 1.5
F
Toevaluate the conductionlossesuse the following equation:
P= 1.1x I
F(AV)
+0.0095 I
F2(RMS)
RECOVERYCHARACTERISTICS
Symbol Parameter TestConditions Min. Typ. Max. Unit
t
rr
Reverserecovery
time
Tj=25°CI
Irr = 0.25A I
Tj=25°C35µA
=100°C6mA
T
j
= 0.5A
F
=1A
R
50 ns
T
=25°CI
j
dI
/dt = -15A/µsVR=30V
F
=1A
F
100
TURN-OFF SWITCHINGCHARACTERISTICS
Symbol Parameter TestConditions Min. Typ. Max. Unit
t
IRM
I
RM
C factor Turn-off
PIN OUT configuration in D
Maximumreverse
recoverytime
Maximumreverse
recoverycurrent
overvoltage
coefficient
2
Tj=100°CdI
I
=30A dIF/dt = -240A/µs50
F
/dt = -120A/µs75ns
F
VCC= 200 V dIF/dt = -120A/µs9ns
Lp < 0.05 µHdI
=100°CI
T
j
/dt = -240A/µs12
F
F=IF(AV)
3.3 /
VCC=60V Lp=1µH
/dt = -30A/µs
dI
F
PAK:
2/5
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