SGS Thomson Microelectronics BYT60P-400, BYT261PIV-400, BYT260PIV-400 Datasheet

BYT60P-400



BYT260PIV-400 / BYT261PIV-400

FAST RECOVERY RECTIFIER DIODES

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

VF(max) 1.4 V
trr (max) 50 ns

FEATURES ANDBENEFITS

n VERY LOW REVERSE RECOVERY TIME
n VERY LOW SWITCHING LOSSES
n LOW NOISE TURN-OFF SWITCHING
n INSULATED PACKAGE: ISOTOP

Insulation voltage: 2500 V
Capacitance = 45 pF
Inductance < 5nH

2 x 60 A

400 V

RMS

K2 A2

A1K1

BYT261PIV-400

ISOTOP

(Plastic)

A2 K1

A1K2

BYT260PIV-400

TM

DESCRIPTION

These rectifierdevicesaresuited for free-wheeling
function in converters and motor controlcircuits.

Packaged in ISOTOP or SOD93, they are
intended for use in Switch Mode Power Supplies.

A

K

SOD93

(Plastic)

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

FRM

I

F(RMS)

I

F(AV)

Repetitive peakreverse voltage
Repetitive peakforward current tp=5 µs F=1kHz
RMS forward current ISOTOP

SOD93

Average forward current δ = 0.5 Tc = 70°C ISOTOP

400 V

1000 A

140 A
100

60 A

Tc = 80°C SOD93

I

FSM

T

Tj

stg

Surge non repetitive forward current
tp = 10 ms Sinusoidal

Storage temperaturerange
Maximum operating junction temperature

ISOTOP
SOD93

600 A
550

- 40 to + 150 °C
150 °C

TM: ISOTOP is aregistered trademark of STMicroelectronics.

May 2000 - Ed: 4D

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BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case ISOTOP Per diode

Total

SOD93 Total

R

th(c)

Coupling

When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1)= P(diode) x R

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VF*

Forward voltage drop Tj = 25°CI

=60A

F

Tj = 100°C

IR**

Pulse test : * tp = 380 µs, δ <2%

Reverse leakage cur­rent

** tp = 5 ms, δ <2%

Tj = 25°CV

R=VRRM

Tj = 100°C

0.8

°C/W

0.45

0.7

0.1 °C/W

1.5 V

1.4
60 µA

6mA

To evaluatethe conduction losses use the following equation:
P = 1.1 x I

F(AV)

+0.0045 I

F2(RMS)

RECOVERY CHARACTERISTICS (per diode)

Symbol Test Conditions Min. Typ. Max. Unit

t

rr

Tj = 25°CIF=1A VR= 30V dIF/dt = - 15A/µs

IF= 0.5A IR=1A Irr= 0.25A

100 ns

50

TURN-OFF SWITCHING CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

C=

IRM

I

RM

V
V

Maximum reverse
recovery time

Maximum reverse
recovery current

Turn-off overvol t age

RP

coeff icient

CC

dIF/dt = - 240 A/µsV
dIF/dt = - 480 A/µs
dIF/dt = - 240 A/µs
dIF/dt = - 480 A/µs

= 200 V

CC

IF=60A
Lp0.05 µH
Tj = 100°C
(see fig. 13)

Tj = 100°CVCC= 120V IF=I
dIF/dt = - 60A/µsLp= 0.8µH
(see fig. 14)

F(AV)

75 ns

50

18 A

24

3.3 4 /

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BYT60P-400 / BYT260PIV-400 / BYT261PIV-400

Fig. 1: Average forward power dissipation versus
average forward current (per diode, for ISOTOP).

PF(av)(W)

110
100

90
80
70

δ = 0.2

δ= 0.1

δ = 0.05

δ= 0.5

δ =1

60
50
40
30

T

20
10

0

0 1020304050607080

IF(av)(A)

=tp/T tp

δ

Fig. 3: Average forward current versus ambient
temperature (δ=0.5, per diode for ISOTOP).

IF(av)(A)

70
60
50
40
30
20
10

0

0 25 50 75 100 125 150

δ

=tp/T

Rth(j-a)=Rth(j-c)

Rth(j-a)=2.5°C/W

T

tp

Fig. 2: Peak current versus form factor (per diode,
for ISOTOP).

IM(A)

350

ISOTOP

Tamb(°C)

300
250
200
150
100

50

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

SOD93

P=50W

P=75W

P=25W

P=100W

δ

δ

=tp/T

T

tp

Fig. 4-1:Non repetitivesurge peak forward current
versus overload duration (SOD93).

IM(A)

450
400
350
300
250
200
150

IM

100

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

Tc=50°C

Tc=25°C

Tc=75°C

t(s)

Fig. 4-2: Non repetitivesurge peak forward current

versus overload duration (per diode, for ISOTOP).

IM(A)

400
350
300
250
200
150
100

IM

50

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

Tc=50°C

Tc=25°C

Tc=75°C

t(s)

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