SGS Thomson Microelectronics BYT231PIV-400, BYT230PIV-400 Datasheet
BYT230PIV-400
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
VF(max) 1.4 V
trr (max) 50 ns
FEATURES ANDBENEFITS
n VERY LOW REVERSE RECOVERY TIME
n VERY LOW SWITCHING LOSSES
n LOW NOISE TURN-OFF SWITCHING
n INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
Capacitance = 45 pF
Inductance < 5nH
DESCRIPTION
2 x 30 A
400 V
RMS
BYT231PIV-400
K2 A2
A1K1
BYT231PIV-400
ISOTOP
(Plastic)
A2 K1
A1K2
BYT230PIV-400
TM
These rectifierdevicesaresuited for free-wheeling
function in converters and motor controlcircuits.
Packaged in ISOTOP, they are intended for use in
Switch Mode Power Supplies.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
FRM
I
F(RMS)
I
F(AV)
Repetitive peakreverse voltage
Repetitive peakforward current tp=5 µs F=1kHz
RMS forward current
Average forward current Tc = 75°C
400 V
900 A
50 A
30 A
δ = 0.5
I
FSM
T
stg
Tj
TM: ISOTOP is aregistered trademark of STMicroelectronics.
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperaturerange
Maximum operating junction temperature
350 A
- 40 to + 150 °C
150 °C
May 2000 - Ed: 5D
1/6
BYT230PIV-400 / BYT231PIV-400
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case Per diode
Total
R
th(c)
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1)= P(diode) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VF*
Forward voltage drop Tj = 25°CI
=30A
F
Tj = 100°C
IR**
Pulse test : * tp = 380 µs, δ <2%
Reverse leakage current
** tp = 5 ms, δ <2%
Tj = 25°CV
R=VRRM
Tj = 100°C
To evaluatethe conduction losses use the following equation:
P = 1.1 x I
F(AV)
+0.0095 I
F2(RMS)
1.5
0.8
0.1
°C/W
1.5 V
1.4
35 µA
6mA
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25°CIF=1A VR= 30V dIF/dt = - 15A/µs
IF= 0.5A IR=1A Irr= 0.25A
100 ns
50
TURN-OFF SWITCHING CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
C=
IRM
I
RM
V
V
Maximum reverse
recovery time
Maximum reverse
recovery current
Turn-off overvol t age
RP
coeff icient
CC
dIF/dt = - 120 A/µsV
dIF/dt = - 240 A/µs
dIF/dt = - 120 A/µs
dIF/dt = - 240 A/µs
Tj = 100°CVCC= 60V IF=I
= 200 V
CC
IF=30A
Lp0.05 µH
Tj = 100°C
(see fig. 13)
F(AV)
dIF/dt = - 30A/µsLp=1µH
(see fig. 14)
75 ns
50
9A
12
3.3 /
2/6
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